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Patent Searching and Data


Title:
SEMICONDUCTOR DEVICE
Document Type and Number:
WIPO Patent Application WO/2019/234547
Kind Code:
A1
Abstract:
The purpose of the present invention is to provide a semiconductor device to which die shrinking can be implemented and which can achieve high integration. Provided is a semiconductor device that includes first and second conductors, first to third insulators, and first to third oxides, wherein the first conductor is disposed exposed from a top surface of the first insulator, the first oxide is disposed on the first insulator and the first conductor, a first opening that reaches the first conductor is formed in the first oxide, the second oxide is disposed on the first oxide, the second oxide has a first region, a second region, and a third region that is positioned between the first region and the second region, the first region and the second region have resistance that is lower than the resistance of the third region, the second region of the second oxide contacts a top surface of the first conductor via the first opening, the third oxide is disposed on the second oxide, the second insulator is disposed on the third oxide, the second conductor is disposed on the second insulator, and the third insulator is disposed in contact with the top surface of the first insulator and covering the first region and the second region.

Inventors:
TAKEUCHI TOSHIHIKO (JP)
YAMADE NAOTO (JP)
OKAZAKI YUTAKA (JP)
TEZUKA SACHIAKI (JP)
YAMAZAKI SHUNPEI (JP)
Application Number:
PCT/IB2019/054361
Publication Date:
December 12, 2019
Filing Date:
May 27, 2019
Export Citation:
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Assignee:
SEMICONDUCTOR ENERGY LAB (JP)
International Classes:
H01L29/786; H01L21/336; H01L21/8234; H01L21/8242; H01L27/06; H01L27/088; H01L27/108; H01L27/1156; H01L29/788; H01L29/792
Domestic Patent References:
WO2016203341A12016-12-22
Foreign References:
JP2015181162A2015-10-15
JP2013102149A2013-05-23
JP2017112374A2017-06-22
JP2015188070A2015-10-29
US20160322388A12016-11-03
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