Title:
SEMICONDUCTOR DEVICE
Document Type and Number:
WIPO Patent Application WO/2019/235088
Kind Code:
A1
Abstract:
This semiconductor device comprises a transistor that includes: a gate electrode provided on a substrate; a gate insulating film provided on the gate electrode; an oxide semiconductor layer provided on the gate electrode via the gate insulating film; a source electrode and a drain electrode provided on the oxide semiconductor layer; a protective film provided on the source electrode and the drain electrode; and an electrically conductive layer provided on the protective film and overlapping the oxide semiconductor layer. The protective film has a first silicon oxide film and a first silicon nitride film which are stacked, and the first silicon oxide film is in contact with the oxide semiconductor layer. The gate insulating film has a second silicon nitride film and a second silicon oxide film which are stacked, and the second silicon oxide film is in contact with the oxide semiconductor layer. In plan view, the oxide semiconductor layer has a first region that is located between the source electrode and the drain electrode, and a portion of the first region overlaps the electrically conductive layer.
Inventors:
TSUBUKU MASASHI (JP)
SAKAMOTO MICHIAKI (JP)
OKADA TAKASHI (JP)
KANEKO TOSHIKI (JP)
TODA TATSUYA (JP)
SAKAMOTO MICHIAKI (JP)
OKADA TAKASHI (JP)
KANEKO TOSHIKI (JP)
TODA TATSUYA (JP)
Application Number:
PCT/JP2019/017060
Publication Date:
December 12, 2019
Filing Date:
April 22, 2019
Export Citation:
Assignee:
JAPAN DISPLAY INC (JP)
International Classes:
H01L29/786; H01L21/28; H01L21/336; H01L51/50
Foreign References:
| JP2014199403A | 2014-10-23 | |||
| JP2016177284A | 2016-10-06 | |||
| JP2011172217A | 2011-09-01 |
Attorney, Agent or Firm:
TAKAHASHI, HAYASHI AND PARTNER PATENT ATTORNEYS, INC. (JP)
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