Title:
SEMICONDUCTOR DEVICE
Document Type and Number:
WIPO Patent Application WO/2022/085151
Kind Code:
A1
Abstract:
A semiconductor device according to the present disclosure comprises: a first semiconductor layer of a first conductivity type; a second semiconductor layer that is provided on the top surface of the first semiconductor layer, is of the first conductivity type, and has a lower impurity concentration than that of the first semiconductor layer; a well region that is provided on the top surface side of the second semiconductor layer in an active region, and is of a second conductivity type; a source region that is provided on the top surface side of the well region, and is of the first conductivity type; a high concentration region that is provided on the top surface side of the second semiconductor layer in a terminal region, is of the second conductivity type, and has a higher impurity concentration than that of the well region; a gate electrode that is provided directly above the well region; and a source electrode that is electrically connected to the source region and the high concentration region. The impurity concentration of the first semiconductor layer is at least 4×1018cm-3, and the thickness thereof is at least 4 μm.
Inventors:
TABUCHI SHINICHI (JP)
ATA YASUO (JP)
ATA YASUO (JP)
Application Number:
PCT/JP2020/039707
Publication Date:
April 28, 2022
Filing Date:
October 22, 2020
Export Citation:
Assignee:
MITSUBISHI ELECTRIC CORP (JP)
International Classes:
H01L29/06; H01L29/12; H01L29/78
Domestic Patent References:
| WO2020208761A1 | 2020-10-15 |
Foreign References:
| JP2020141130A | 2020-09-03 | |||
| JP2015056644A | 2015-03-23 | |||
| JP2017112171A | 2017-06-22 |
Attorney, Agent or Firm:
TAKADA, Mamoru et al. (JP)
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