Title:
SEMICONDUCTOR DEVICE
Document Type and Number:
WIPO Patent Application WO/2022/092035
Kind Code:
A1
Abstract:
This semiconductor device comprises: a chip having a main surface; a drain region formed in an upper-layer portion of the main surface; a source region formed in the upper-layer portion of the main surface at an interval from the drain region; a channel inversion region formed on the source region side between the drain region and the source region in the upper-layer portion of the main surface; a drift region formed in a region between the drain region and the channel inversion region in the upper-layer portion of the main surface; a gate insulating film including a first part coating the channel inversion region on the main surface and a second part coating the drift region on the main surface; and a gate electrode including a first electrode part coating the first part and a second electrode part leading out of the first electrode part onto the second part so as to partially expose the second part.
Inventors:
HAMAZAWA YASUSHI (JP)
Application Number:
PCT/JP2021/039336
Publication Date:
May 05, 2022
Filing Date:
October 25, 2021
Export Citation:
Assignee:
ROHM CO LTD (JP)
International Classes:
H01L29/78; H01L21/336
Foreign References:
| JP2015216218A | 2015-12-03 | |||
| JP2019165094A | 2019-09-26 | |||
| US20170194489A1 | 2017-07-06 | |||
| US20160172486A1 | 2016-06-16 | |||
| US20130341714A1 | 2013-12-26 |
Attorney, Agent or Firm:
AI ASSOCIATION OF PATENT AND TRADEMARK ATTORNEYS (JP)
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