Title:
SEMICONDUCTOR DEVICE
Document Type and Number:
WIPO Patent Application WO/2022/230014
Kind Code:
A1
Abstract:
A semiconductor substrate (1) has a drift layer (8). An IGBT region (2) and a diode region (3) are provided on the semiconductor substrate (1) and have an emitter electrode (16) on the surface of the semiconductor substrate (1). A sense IGBT region (4) is provided on the semiconductor substrate (1), has a smaller area than that of the IGBT region (2), and has a sense emitter electrode (20) that is on the surface of the semiconductor substrate (1) and that is separated from the emitter electrode (16). A sense diode region (5) is provided on the semiconductor substrate (1), has a smaller area than that of the diode region (3), and has a sense anode electrode (21) that is on the surface of the semiconductor substrate (1) and that is separated from the emitter electrode (16). The sense diode region (5) is separated from the IGBT region (2) by a distance that is greater than or equal to the thickness of the drift layer (8).
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Inventors:
OSAGA TSUYOSHI (JP)
ATA YASUO (JP)
HATA YUKI (JP)
ATA YASUO (JP)
HATA YUKI (JP)
Application Number:
PCT/JP2021/016615
Publication Date:
November 03, 2022
Filing Date:
April 26, 2021
Export Citation:
Assignee:
MITSUBISHI ELECTRIC CORP (JP)
International Classes:
H01L29/78; H01L21/8222; H01L27/06; H01L29/739
Domestic Patent References:
| WO2015118714A1 | 2015-08-13 | |||
| WO2014167824A1 | 2014-10-16 |
Foreign References:
| JP2019068036A | 2019-04-25 | |||
| JP2017103400A | 2017-06-08 |
Attorney, Agent or Firm:
TAKADA, TAKAHASHI & PARTNERS (JP)
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