Title:
SEMICONDUCTOR ELEMENT COMPRISING A SEQUENCE OF LAYERS FOR CONVERTING ACOUSTIC OR THERMAL SIGNALS AND ELECTRICAL VOLTAGE CHANGES INTO EACH OTHER AND METHOD FOR PRODUCING THE SAME
Document Type and Number:
WIPO Patent Application WO2002009131
Kind Code:
A3
Abstract:
The sequence of layers has a lower electrode (U), an upper electrode (O) and a piezoelectric or pyroelectric layer (S) which is located between them. An auxiliary layer (H) is located between the lower electrode (U) and said layer (S), said auxiliary layer ensuring that the orientation of the layer (S) is homogenous as it grows during the production process. The auxiliary layer (H) preferably consists essentially of amorphous silicon, amorphous silicon oxide or amorphous silicon nitride.
Inventors:
AIGNER ROBERT (DE)
ELBRECHT LUEDER (DE)
HERZOG THOMAS RAINER (DE)
MARKSTEINER STEPHAN (DE)
NESSLER WINFRIED (DE)
ELBRECHT LUEDER (DE)
HERZOG THOMAS RAINER (DE)
MARKSTEINER STEPHAN (DE)
NESSLER WINFRIED (DE)
Application Number:
PCT/EP2001/007604
Publication Date:
May 23, 2002
Filing Date:
July 03, 2001
Export Citation:
Assignee:
INFINEON TECHNOLOGIES AG (DE)
AIGNER ROBERT (DE)
ELBRECHT LUEDER (DE)
HERZOG THOMAS RAINER (DE)
MARKSTEINER STEPHAN (DE)
NESSLER WINFRIED (DE)
AIGNER ROBERT (DE)
ELBRECHT LUEDER (DE)
HERZOG THOMAS RAINER (DE)
MARKSTEINER STEPHAN (DE)
NESSLER WINFRIED (DE)
International Classes:
H01L37/02; H01L41/08; H01L41/09; H01L41/22; H01L21/28; H01L41/319; H03H3/02; H03H9/17; (IPC1-7): H01L37/02; H01L41/24; H03H3/02; H03H9/17
Foreign References:
| EP0963040A2 | 1999-12-08 | |||
| EP1124328A1 | 2001-08-16 |
Other References:
LUTSKY J J ET AL: "A sealed cavity TFR process for RF bandpass filters", 1996 INTERNATIONAL ELECTRON DEVICES MEETING, SAN FRANCISCO, CA, USA, 8 December 1996 (1996-12-08) - 11 December 1996 (1996-12-11), pages 95 - 98, XP000753738, ISBN: 0-7803-3394-2
HIBOUX S ET AL: "Piezoelectric and dielectric properties of sputter deposited (111), (100) and random-textured Pb(ZrxTi1-x)O3 (PZT) thin films", FERROELECTRICS, vol. 224, no. 1-4, 1999, pages 315 - 322, XP000978337, ISSN: 0015-0193
HIBOUX S ET AL: "Piezoelectric and dielectric properties of sputter deposited (111), (100) and random-textured Pb(ZrxTi1-x)O3 (PZT) thin films", FERROELECTRICS, vol. 224, no. 1-4, 1999, pages 315 - 322, XP000978337, ISSN: 0015-0193
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