Title:
SEMICONDUCTOR OPTICAL ELEMENT ARRAY AND MANUFACTURING METHOD THEREFORE
Document Type and Number:
WIPO Patent Application WO/2010/023921
Kind Code:
A1
Abstract:
Disclosed is a semiconductor optical element array, which is equipped with a semiconductor substrate comprising a main surface in which a plurality of indentations is formed, a mask pattern, which is formed on top of the main surface of the semiconductor substrate, and which comprises a plurality of apertures directly on top of each of the plurality of indentations, a plurality of fine columnar crystals made from group III nitride semiconductor and grown upward of the mask pattern from the plurality of indentations through the plurality of apertures, an active layer grown on top of each of the plurality of fine columnar crystals, and a semiconductor layer that covers each of the active layers.
Inventors:
KISHINO KATSUMI (JP)
KIKUCHI AKIHIKO (JP)
SEKIGUCHI HIROTO (JP)
KIKUCHI AKIHIKO (JP)
SEKIGUCHI HIROTO (JP)
Application Number:
PCT/JP2009/004173
Publication Date:
March 04, 2010
Filing Date:
August 27, 2009
Export Citation:
Assignee:
SOPHIA SCHOOL CORP (JP)
KISHINO KATSUMI (JP)
KIKUCHI AKIHIKO (JP)
SEKIGUCHI HIROTO (JP)
KISHINO KATSUMI (JP)
KIKUCHI AKIHIKO (JP)
SEKIGUCHI HIROTO (JP)
International Classes:
H01L33/00; H01L21/205; H01S5/343
Domestic Patent References:
| WO2006025407A1 | 2006-03-09 |
Foreign References:
| JP2007027298A | 2007-02-01 | |||
| JP2003282942A | 2003-10-03 | |||
| JP2008022014A | 2008-01-31 | |||
| JP2008108924A | 2008-05-08 |
Other References:
M. YOSHIZAWA ET AL., JPN. J. APPL. PHYS., vol. 36, no. 4B, 1997, pages L459 - L462
H. SEKIGUCHI ET AL., JOURNAL OF CRYSTAL GROWTH, vol. 300, 2007, pages 259 - 262
M. YOSHIZAWA, A. KIKUCHI, M. MORI, N. FUJITA, K. KISHINO: "Growth of Self-Organized GaN Nanostructures on A1203 (0001) by RF-Radical Source Molecular Beam Epitaxy", JPN. J. APPL. PHYS., vol. 36, no. 4B, 1997, pages L459 - L462
H. SEKIGUCHI, T. NAKAZATO, A. KIKUCHI, K. KISHINO: "Structural and optical properties of GaN nanocolumns grown on (0001) sapphire substrates by rf-plasma-assisted molecular-beam epitaxy", JOURNAL OF CRYSTAL GROWTH, vol. 300, 2007, pages 259 - 262
H. SEKIGUCHI ET AL., JOURNAL OF CRYSTAL GROWTH, vol. 300, 2007, pages 259 - 262
M. YOSHIZAWA, A. KIKUCHI, M. MORI, N. FUJITA, K. KISHINO: "Growth of Self-Organized GaN Nanostructures on A1203 (0001) by RF-Radical Source Molecular Beam Epitaxy", JPN. J. APPL. PHYS., vol. 36, no. 4B, 1997, pages L459 - L462
H. SEKIGUCHI, T. NAKAZATO, A. KIKUCHI, K. KISHINO: "Structural and optical properties of GaN nanocolumns grown on (0001) sapphire substrates by rf-plasma-assisted molecular-beam epitaxy", JOURNAL OF CRYSTAL GROWTH, vol. 300, 2007, pages 259 - 262
Attorney, Agent or Firm:
HAYAMI, SHINJI (JP)
Shinji Hayami (JP)
Shinji Hayami (JP)
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