Title:
SEMICONDUCTOR STRUCTURE COMPRISING ACTIVE ZONES
Document Type and Number:
WIPO Patent Application WO2005073485
Kind Code:
A9
Abstract:
The invention relates to a semiconductor structure with active zones, such as light diodes or photodiodes (10, 16, 24, 26, 36, 46, 54, 68, 74, 80), comprising a substrate (SUB) with at least two active zones (AZ1 - AZn), each of which emits or absorbs a radiation of differing wavelength. According to the invention, a multi-wavelength diode may be achieved, whereby a first (lower) active zone (AZ1) is grown on a surface of the substrate (SUB), whereby one or several further active zones (AZ1 - Azn) are epitaxially grown one on the other and the active zones (AZ1 - AZn) are serially connected from the lower active zone (AZ1) to an upper active zone (AZn), by means of tunnel diodes (TD1 - TDn), serving as low-impedance resistors.
Inventors:
BENSCH WERNER (DE)
Application Number:
PCT/EP2005/000759
Publication Date:
November 24, 2005
Filing Date:
January 26, 2005
Export Citation:
Assignee:
RWE SPACE SOLAR POWER GMBH (DE)
BENSCH WERNER (DE)
BENSCH WERNER (DE)
International Classes:
H01L33/08; H01L27/15; H01L31/0304; H01L31/109; H01L31/11
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