Title:
SEMICONDUCTOR STRUCTURE AND FABRICATION METHOD THEREFOR
Document Type and Number:
WIPO Patent Application WO/2022/100159
Kind Code:
A1
Abstract:
Provided in embodiments of the present application are a semiconductor structure and a fabrication method therefor. The semiconductor structure comprises: a substrate, a conductive pillar at least located in the substrate, and connecting structures. At least one of the connecting structures is electrically connected to the end part of the conductive pillar. The connecting structures and the conductive pillar are made of different materials. The total area of an orthographic projection of the connecting structures on the substrate is smaller than the area of an orthographic projection of the conductive pillar on the substrate. The semiconductor structure further comprises an electrical connection layer, the electrical connection layer being electrically connected to an end of the connecting structures away from the conductive pillar.
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Inventors:
WU PING-HENG (CN)
Application Number:
PCT/CN2021/110133
Publication Date:
May 19, 2022
Filing Date:
August 02, 2021
Export Citation:
Assignee:
CHANGXIN MEMORY TECH INC (CN)
International Classes:
H01L23/538; H01L21/768
Foreign References:
| CN104600060A | 2015-05-06 | |||
| CN103681616A | 2014-03-26 | |||
| CN103367319A | 2013-10-23 | |||
| US20090294983A1 | 2009-12-03 | |||
| CN102299136A | 2011-12-28 | |||
| US20070069364A1 | 2007-03-29 |
Other References:
See also references of EP 4024449A4
Attorney, Agent or Firm:
CHINA PAT INTELLECTUAL PROPERTY OFFICE (CN)
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