Title:
SEMICONDUCTOR STRUCTURE AND PREPARATION METHOD THEREFOR
Document Type and Number:
WIPO Patent Application WO/2024/026967
Kind Code:
A1
Abstract:
A semiconductor structure and a preparation method therefor. The method comprises: providing a substrate (1), wherein an isolation trench (11) is formed in the substrate; forming a first isolation layer (21) in the isolation trench, wherein the first isolation layer fills the isolation trench, and a crack (23) extending to an upper surface of the first isolation layer in a vertical direction is formed in the first isolation layer; etching back to remove part of the first isolation layer to form an isolation filling groove (12) in communication with a top opening (231) of the crack; and forming a second isolation layer (22) in the isolation filling groove to block the top opening of the crack, wherein the first isolation layer and the second isolation layer together form an isolation structure (2). According to the semiconductor structure and the preparation method therefor, an etchant is prevented from entering the crack through the top opening to etch the isolation structure during subsequent etching, and thus the situation in which the performance of the semiconductor structure is affected due to branch of the isolation structure can be prevented.
Inventors:
LIU YOUMING (CN)
Application Number:
PCT/CN2022/116710
Publication Date:
February 08, 2024
Filing Date:
September 02, 2022
Export Citation:
Assignee:
CHANGXIN MEMORY TECH INC (CN)
International Classes:
H01L21/762; H01L29/06
Foreign References:
| KR20070021511A | 2007-02-23 | |||
| CN108461496A | 2018-08-28 | |||
| CN110970345A | 2020-04-07 | |||
| KR20020055938A | 2002-07-10 |
Attorney, Agent or Firm:
SHANGHAI WINSUN INTELLECTUAL PROPERTY AGENCY (CN)
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