Title:
SEMICONDUCTOR WAFER, LIGHT-RECEIVING ELEMENT, LIGHT-RECEIVING ELEMENT ARRAY, HYBRID-TYPE DETECTION DEVICE, OPTICAL SENSOR DEVICE, AND PROCESS FOR PRODUCTION OF SEMICONDUCTOR WAFER
Document Type and Number:
WIPO Patent Application WO/2011/129031
Kind Code:
A1
Abstract:
Disclosed is a semiconductor wafer comprising an InP substrate (1), an MQW light-receiving layer (3) which is arranged on the InP substrate (1), a contact layer (5) which is arranged on the light-receiving layer (3), a p-type region (6) which extends from the surface of the contact layer (5) to the light-receiving layer, and a p-side electrode (11) which ohmically contacts with the p-type region. The semiconductor wafer is characterized in that the MQW has a laminated structure composed of pairs of an InxGa1-xAs (0.38 ≤ x ≤ 0.68) layer and a GaAs1-ySby (0.25 ≤ y ≤ 0.73) layer and the Sb content (y) in an InP substrate side part is higher than the Sb content (y) in a part opposed to the InP substrate side part in the GaAs1-ySby layer.
Inventors:
MORI HIROKI (JP)
IGUCHI YASUHIRO (JP)
INADA HIROSHI (JP)
NAGAI YOUICHI (JP)
MIURA KOUHEI (JP)
NAKAHATA HIDEAKI (JP)
AKITA KATSUSHI (JP)
ISHIZUKA TAKASHI (JP)
FUJII KEI (JP)
IGUCHI YASUHIRO (JP)
INADA HIROSHI (JP)
NAGAI YOUICHI (JP)
MIURA KOUHEI (JP)
NAKAHATA HIDEAKI (JP)
AKITA KATSUSHI (JP)
ISHIZUKA TAKASHI (JP)
FUJII KEI (JP)
Application Number:
PCT/JP2010/071649
Publication Date:
October 20, 2011
Filing Date:
December 03, 2010
Export Citation:
Assignee:
SUMITOMO ELECTRIC INDUSTRIES (JP)
MORI HIROKI (JP)
IGUCHI YASUHIRO (JP)
INADA HIROSHI (JP)
NAGAI YOUICHI (JP)
MIURA KOUHEI (JP)
NAKAHATA HIDEAKI (JP)
AKITA KATSUSHI (JP)
ISHIZUKA TAKASHI (JP)
FUJII KEI (JP)
MORI HIROKI (JP)
IGUCHI YASUHIRO (JP)
INADA HIROSHI (JP)
NAGAI YOUICHI (JP)
MIURA KOUHEI (JP)
NAKAHATA HIDEAKI (JP)
AKITA KATSUSHI (JP)
ISHIZUKA TAKASHI (JP)
FUJII KEI (JP)
International Classes:
H01L31/10; H01L27/146
Domestic Patent References:
| WO2010032553A1 | 2010-03-25 | |||
| WO2009101740A1 | 2009-08-20 |
Foreign References:
| JPH05160429A | 1993-06-25 | |||
| JP2009272385A | 2009-11-19 |
Other References:
HIDEO TAKAHASHI ET AL.: "InGaAs photodetector for near infrared", OPTRONICS, 1997, pages 107 - 113
R. SIDHU; N. DUAN; J. C. CAMPBELL; A. L. HOLMES, JR.: "A 2.3 µm cutoff wavelength photodiode on InP using lattice-matched GaInAs-GaAsSb type II quantum wells", INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS, 2005
R. SIDHU; N. DUAN; J. C. CAMPBELL; A. L. HOLMES, JR.: "A 2.3 µm cutoff wavelength photodiode on InP using lattice-matched GaInAs-GaAsSb type II quantum wells", INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS, 2005
Attorney, Agent or Firm:
NAKATA, Motomi et al. (JP)
Nakada Motoki (JP)
Nakada Motoki (JP)
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Claims: