Title:
SENSE AMPLIFIER, MEMORY, AND CONTROL METHOD FOR SENSE AMPLIFIER
Document Type and Number:
WIPO Patent Application WO/2024/093051
Kind Code:
A1
Abstract:
The present disclosure provides a sense amplifier, a memory, and a control method for the sense amplifier. The sense amplifier comprises an amplification module and an offset elimination module; the offset elimination module is connected to a first end of a first NMOS, a control end of the first NMOS and a control end of a second NMOS in the amplification module, and is used for compensating for a threshold voltage offset between the first NMOS and the second NMOS into a complementary bit line and a bit line on the basis of a first driving voltage signal.
Inventors:
WU RUNJIN (CN)
WANG WEITAO (CN)
NA ONEGYUN (CN)
ZHUANG YONG (CN)
WANG WEITAO (CN)
NA ONEGYUN (CN)
ZHUANG YONG (CN)
Application Number:
PCT/CN2023/076592
Publication Date:
May 10, 2024
Filing Date:
February 16, 2023
Export Citation:
Assignee:
CHANGXIN MEMORY TECH INC (CN)
International Classes:
G11C7/06
Domestic Patent References:
| WO2022021776A1 | 2022-02-03 | |||
| WO2022170720A1 | 2022-08-18 |
Foreign References:
| CN113674774A | 2021-11-19 |
Attorney, Agent or Firm:
LEADER PATENT & TRADEMARK FIRM (CN)
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