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Title:
SILICON-BASED NEGATIVE ELECTRODE MATERIAL AND PREPARATION METHOD THEREFOR, BATTERY, AND TERMINAL
Document Type and Number:
WIPO Patent Application WO/2021/136376
Kind Code:
A1
Abstract:
Disclosed are a silicon-based negative electrode material (10) and a preparation method therefor, as well as a battery and a terminal (200) comprising the silicon-based negative electrode material (10). The silicon-based negative electrode material (10) comprises a silicon-based matrix (1) having a low silicon-to-oxygen ratio and silicon-based particles (2) having a high silicon-to-oxygen ratio dispersed therein. The silicon-to-oxygen ratio in the silicon-based matrix (1) having a low silicon-to-oxygen ratio is 1:x, where 1 < x ≤ 2, and the silicon-to-oxygen ratio in the silicon-based particles (2) having a high silicon-to-oxygen ratio is 1:y, where 0 ≤ y ≤ 1. The silicon-based matrix (1) having a low silicon-to-oxygen ratio is silicon dioxide (11), or comprises silicon dioxide (11) and silicon-containing crystal particles (12) dispersed in the silicon dioxide (11); and the silicon-based particles (2) having a high silicon-to-oxygen ratio are silicon particles, or comprise silicon dioxide (11) and silicon-containing crystal particles (12) dispersed in the silicon dioxide (11). The silicon-based negative electrode material (10) has a high capacity and a low expansion property at the same time.

Inventors:
LEI DAN (CN)
SHA YUJING (CN)
DENG YAOMING (CN)
XIA SHENGAN (CN)
Application Number:
PCT/CN2020/141408
Publication Date:
July 08, 2021
Filing Date:
December 30, 2020
Export Citation:
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Assignee:
HUAWEI TECH CO LTD (CN)
International Classes:
H01M4/36
Domestic Patent References:
WO2019144026A12019-07-25
Foreign References:
CN105409035A2016-03-16
CN101047234A2007-10-03
CN102214824A2011-10-12
CN1513922A2004-07-21
CN201911425863A2019-12-31
Other References:
See also references of EP 4071852A4
Attorney, Agent or Firm:
SCIHEAD IP LAW FIRM (CN)
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