SILICON CARBIDE EPITAXIAL SUBSTRATE

WIPO Patent Application WO/2016/051975

A1

This silicon carbide epitaxial substrate (100) comprises a silicon carbide single crystal substrate (10), and, above the silicon carbide single crystal substrate (10), an epitaxial layer (20). The silicon carbide single crystal substrate (10) diameter is 100 mm or greater. The epitaxial layer (20) thickness is 10 μm or greater. The carrier concentration in the epitaxial layer (20) is between 1 × 1014 cm-3 and 1 × 1016 cm-3 inclusive. The ratio, with respect to the carrier concentration mean value in the epitaxial layer (20) plane, of the carrier concentration standard deviation in the same plane, is 10% or lower. The epitaxial layer (20) has a main surface (21). The arithmetic mean roughness Sa of the main surface (21) is 0.3 nm or lower as per a three dimensional surface roughness measurement. On the main surface (21), the surface density of pits caused by threading screw dislocation is 1000 cm-2 or less. Inside a pit (2), the maximum depth from the main surface (21) is 8 nm or greater.

NISHIGUCHI TARO (JP)
WADA KEIJI (JP)
GENBA JUN (JP)
ITOH HIRONORI (JP)
DOI HIDEYUKI (JP)
HIRATSUKA KENJI (JP)

PCT/JP2015/073134

April 07, 2016

August 18, 2015

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SUMITOMO ELECTRIC INDUSTRIES (JP)

C30B25/20; C30B29/36; H01L21/20

WO2001018872A1	2001-03-15
WO2014125550A1	2014-08-21
WO2011074453A1	2011-06-23

JP2006066722A	2006-03-09
JP2014166957A	2014-09-11
JP2003086518A	2003-03-20
JP2014093526A	2014-05-19

Fukami Patent Office, p. c. (JP)
Patent business corporation Fukami patent firm (JP)

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