Title:
SILICON CARBIDE AND METHOD FOR MANUFACTURING THE SAME
Document Type and Number:
WIPO Patent Application WO/2012/015262
Kind Code:
A2
Abstract:
Disclosed are a silicon carbide and a method for manufacturing the same. The method for manufacturing silicon carbide includes mixing a silicon source with a carbon source, and heating a mixture of the silicon and carbon sources to form the silicon carbide. At least one of the silicon source and the carbon source has an average grain size of about 10nm to about 100nm.
Inventors:
KIM BYUNG SOOK (KR)
HAN JUNG EUN (KR)
KIM SANG MYUNG (KR)
HAN JUNG EUN (KR)
KIM SANG MYUNG (KR)
Application Number:
PCT/KR2011/005580
Publication Date:
February 02, 2012
Filing Date:
July 28, 2011
Export Citation:
Assignee:
LG INNOTEK CO LTD (KR)
KIM BYUNG SOOK (KR)
HAN JUNG EUN (KR)
KIM SANG MYUNG (KR)
KIM BYUNG SOOK (KR)
HAN JUNG EUN (KR)
KIM SANG MYUNG (KR)
International Classes:
C01B31/36; C04B35/565
Foreign References:
| US5340417A | 1994-08-23 | |||
| KR20100071863A | 2010-06-29 | |||
| KR20090042202A | 2009-04-29 | |||
| KR20090042539A | 2009-04-30 |
Attorney, Agent or Firm:
SEO, Kyo Jun (832-41Yeoksam-dong, Gangnam-gu, Seoul 135-080, KR)
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Claims: