Title:
SILICON CARBIDE MOSFETS WITH INTEGRATED ANTIPARALLEL JUNCTION BARRIER SCHOTTKY FREE WHEELING DIODES AND METHODS OF FABRICATING SAME
Document Type and Number:
WIPO Patent Application WO2004097944
Kind Code:
A3
Abstract:
Silicon carbide semiconductor devices and methods of fabricating silicon carbide semiconductor comprising a silicon carbide DMOSFET and an integral silicon carbide Schottky diode configured to at least partially bypass a built in diode of the DMOSFET. The Schottky diode may be a junction barrier Schottky diode and may have a turn-on voltage lower than a turn-on voltage of a built-in body diode of the DMOSFET. The Schottky diode may have an active area less than an active area of the DMOSFET.
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Inventors:
RYU SEI-HYUNG (US)
Application Number:
PCT/US2004/004892
Publication Date:
December 23, 2004
Filing Date:
February 19, 2004
Export Citation:
Assignee:
CREE INC (US)
RYU SEI-HYUNG (US)
RYU SEI-HYUNG (US)
International Classes:
H01L21/04; H01L29/78; H01L29/872; H01L29/24; (IPC1-7): H01L29/78; H01L29/24; H01L21/04; H01L27/07
Foreign References:
| EP1204145A2 | 2002-05-08 | |||
| US4811065A | 1989-03-07 | |||
| US5111253A | 1992-05-05 |
Other References:
MOHIT BHATNAGAR ET AL: "COMPARISON OF 6H-SIC, 3C-SIC, AND SI FOR POWER DEVICES", IEEE TRANSACTIONS ON ELECTRON DEVICES, IEEE INC. NEW YORK, US, vol. 40, no. 3, 1 March 1993 (1993-03-01), pages 645 - 655, XP000349187, ISSN: 0018-9383
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