Title:
SILICON CARBIDE SUBSTRATE, SILICON CARBIDE EPITAXIAL SUBSTRATE, AND METHOD FOR MANUFACTURING SILICON CARBIDE SEMICONDUCTOR DEVICE
Document Type and Number:
WIPO Patent Application WO/2024/034267
Kind Code:
A1
Abstract:
This silicon carbide substrate has a main surface. The main surface is composed of an outer peripheral portion within 3 mm from the outer periphery of the main surface, and a central portion surrounded by the outer peripheral portion. In an arbitrary square area in the central portion, the arithmetic mean height defined as Sa is 0.1 nm or less, and the skewness defined as Ssk is at least 0. The length of one side of the square area is 250 μm.
Inventors:
HONKE TSUBASA (JP)
Application Number:
PCT/JP2023/022960
Publication Date:
February 15, 2024
Filing Date:
June 21, 2023
Export Citation:
Assignee:
SUMITOMO ELECTRIC INDUSTRIES (JP)
International Classes:
C30B29/36; H01L21/304; H01L21/336; H01L29/12; H01L29/78
Foreign References:
| JP2021138597A | 2021-09-16 | |||
| JP2013012767A | 2013-01-17 | |||
| JP2016048790A | 2016-04-07 |
Attorney, Agent or Firm:
FUKAMI PATENT OFFICE, P.C. (JP)
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