SILICON-CONTAINING RESIST UNDERLAYER-FORMING COMPOSITION CONTAINING AMIC ACID

WIPO Patent Application WO/2011/105368

A1

Disclosed is a lithography resist underlayer-forming composition for forming a resist underlayer that can be used as a hard mask. As the silane compound, the lithography resist underlayer-forming composition contains a hydrolyzable organosilane, a hydrolyzate thereof, or the hydrolysis condensation product thereof, wherein said silane compound includes a silane compound containing both an amide bond in the molecule and an organic group, which itself contains a carboxylate moiety, a carboxylic acid ester moiety or both. In one lithography resist underlayer-forming composition, the silane compound that contains both an amide bond and an organic group, which itself contains a carboxylate moiety, a carboxylic acid ester moiety or both, is present in a molar ratio of no greater than 5 mol% relative to the total amount of silane compound. In another lithography resist underlayer-forming composition, the silane compound that contains both an amide bond and an organic group, which itself contains a carboxylate moiety, a carboxylic acid ester moiety or both, is present in a molar ratio of between 0.5 and 4.9 mol% relative to the total amount of silane compound.

KANNO YUTA (JP)
NAKAJIMA MAKOTO (JP)
SHIBAYAMA WATARU (JP)
TAKEDA SATOSHI (JP)

PCT/JP2011/053837

September 01, 2011

February 22, 2011

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NISSAN CHEMICAL IND LTD (JP)
KANNO YUTA (JP)
NAKAJIMA MAKOTO (JP)
SHIBAYAMA WATARU (JP)
TAKEDA SATOSHI (JP)

G03F7/11; C08G77/26; H01L21/027

WO2006104755A2

2006-10-05

JP2006251794A	2006-09-21
JP2007226170A	2007-09-06
JP2008158002A	2008-07-10

HANABUSA, Tsuneo et al. (JP)
Sepal Tsuneo (JP)

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