Title:
SILICON WAFER AND METHOD FOR PRODUCING SAME
Document Type and Number:
WIPO Patent Application WO/2015/034075
Kind Code:
A1
Abstract:
The purpose of the present invention is to provide a method for producing a silicon wafer which exhibits gettering performance, and does not cause resistance variations when preparing an epitaxial wafer or a bonded wafer by using this silicon wafer. This method for producing a silicon wafer is characterized in that hydrogen ions are injected from the front surface of the silicon wafer at a dosage of 1.0×1013 to 3.0×1016 atoms/cm2, and a gettering layer is formed from a solid solution of the hydrogen ions.
Inventors:
KOGA YOSHIHIRO (JP)
Application Number:
PCT/JP2014/073596
Publication Date:
March 12, 2015
Filing Date:
September 02, 2014
Export Citation:
Assignee:
SUMCO CORP (JP)
International Classes:
H01L21/322; C30B29/06; H01L21/02; H01L21/20; H01L21/265; H01L27/12
Foreign References:
| JPH0661234A | 1994-03-04 | |||
| JPH06338507A | 1994-12-06 | |||
| JP2010109141A | 2010-05-13 | |||
| JPH0878644A | 1996-03-22 | |||
| JP2010283022A | 2010-12-16 | |||
| JP2010010578A | 2010-01-14 |
Attorney, Agent or Firm:
SUGIMURA, KENJI (JP)
Kenji Sugimura (JP)
Kenji Sugimura (JP)
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