Title:
SINGLE CRYSTAL INGOT GROWTH CONTROL DEVICE
Document Type and Number:
WIPO Patent Application WO/2020/153689
Kind Code:
A1
Abstract:
The present invention provides a single crystal ingot growth control device applied to a body process for growing the diameter of an ingot to a target diameter, the single crystal ingot growth control device comprising: an input unit to which a diameter error (ΔD) that is a difference value between a measured diameter (D) of an ingot and a target diameter (D_ T) is input; an operation unit which performs, in real time, integral calculation on the diameter error (ΔD) input by the input unit, and reflects the diameter error integral value (∫ΔD) to compute a final pulling speed (P/S_ F) for each gradually increased configuration time (t); and an output unit which outputs, to a pulling controller during the configuration time (t), the final pulling speed (P/S_ F) computed by the operation unit.
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Inventors:
PARK HYUN WOO (KR)
Application Number:
PCT/KR2020/000962
Publication Date:
July 30, 2020
Filing Date:
January 20, 2020
Export Citation:
Assignee:
SK SILTRON CO LTD (KR)
International Classes:
C30B15/22; C30B29/06
Foreign References:
| JP4414504B2 | 2010-02-10 | |||
| JP2007045685A | 2007-02-22 | |||
| KR101623644B1 | 2016-05-23 | |||
| KR20140095329A | 2014-08-01 | |||
| KR20030020474A | 2003-03-10 |
Attorney, Agent or Firm:
HAW, Yong Noke (KR)
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