Title:
SINTERED BODY, SEMICONDUCTOR SUBSTRATE, AND SEMICONDUCTOR DEVICE, AND PRODUCTION METHODS THEREFOR
Document Type and Number:
WIPO Patent Application WO/2023/171502
Kind Code:
A1
Abstract:
Corrosion resistance, oxidation resistance, and high-temperature strength are secured for a semiconductor substrate of SiC, while also achieving a reduction in production costs, by: forming a molding 20 by layering a paste comprising SiC aggregate 21 and Si and C powders on an SiC epitaxial layer 12 that is itself formed on a support substrate 11 of SiC; carrying out reactive sintering to provide an intermediate sintered body 30 in which polycrystalline SiC has been produced from the Si and C powders; providing a sintered layer 40 in which the free Si has been carbonized to SiC; and detaching the support substrate 11 from the epitaxial layer 12 to provide a semiconductor substrate 100 in which the epitaxial and the sintered layer 40 are stacked.
Inventors:
MAEKAWA TAKUJI (JP)
SATO KEIJU (JP)
SATO KEIJU (JP)
Application Number:
PCT/JP2023/007632
Publication Date:
September 14, 2023
Filing Date:
March 01, 2023
Export Citation:
Assignee:
ROHM CO LTD (JP)
International Classes:
H01L29/78; C04B35/573; C30B29/36; H01L21/329; H01L21/336; H01L29/12; H01L29/739; H01L29/872
Domestic Patent References:
| WO2021020574A1 | 2021-02-04 |
Foreign References:
| JPH08104575A | 1996-04-23 | |||
| JP2012214306A | 2012-11-08 | |||
| JP2005523872A | 2005-08-11 | |||
| JPH0891934A | 1996-04-09 |
Attorney, Agent or Firm:
MIYOSHI Hidekazu et al. (JP)
Download PDF: