SOLID-STATE IMAGING DEVICE AND METHOD FOR MANUFACTURING SAME

WIPO Patent Application WO/2022/249678

A1

[Problem] To provide: a solid-state imaging device that can form a photoelectric conversion unit and a floating diffusion unit in a semiconductor substrate and, when a channel semiconductor layer of a transistor is formed within a semiconductor layer different from this semiconductor substrate, can form a suitable transistor; and a method for manufacturing the solid-state imaging device. [Solution] A solid-state imaging device of the present disclosure comprises: a first semiconductor substrate that includes a photoelectric conversion unit and a floating diffusion unit; and a first transistor that includes a first semiconductor layer that is disposed over the first semiconductor substrate, a first insulating film that is disposed on a lower surface, an upper surface, and a side surface of the first semiconductor layer, and a first electrode that is disposed on a lower surface, an upper surface, and a side surface of the first insulating film. The first insulating film on the lower surface of the first semiconductor layer is thicker than the first insulating film on the upper surface or the side surface of the first semiconductor layer.

TONEGAWA SUSUMU (JP)
AMMO HIROAKI (JP)
HONJO AKIKO (JP)

PCT/JP2022/012319

December 01, 2022

March 17, 2022

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SONY SEMICONDUCTOR SOLUTIONS CORP (JP)

H01L21/768; H01L21/336; H01L21/822; H01L21/8234; H01L27/00; H01L27/04; H01L27/06; H01L27/088; H01L27/146; H01L29/423; H01L29/49; H01L29/786

WO2020090403A1

2020-05-07

JP2020519019A	2020-06-25
JP2018011070A	2018-01-18
US20200388681A1	2020-12-10

NAKAMURA Yukitaka et al. (JP)

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