Title:
SOLID STATE IMAGING DEVICE
Document Type and Number:
WIPO Patent Application WO/2022/104658
Kind Code:
A1
Abstract:
A solid state imaging device in which a plurality of unit pixels are arranged in the form of a matrix along row and column directions is provided. The solid state imaging device includes: a first pixel-to-pixel isolation region formed in a first process; and a second pixel-to-pixel isolation region formed in a second process which differs from the first process. Each unit pixel comprises: one or more light sensing areas; and one or more signal readout circuit areas. Each light sensing area includes: one or more photodiodes; one or more transfer transistors; and a part of a floating diffusion. The signal readout circuit areas include a plurality of in-pixel transistors. In each unit pixel, the floating diffusion and the in-pixel transistors are shared by a plurality of photodiodes and transfer transistors. Each photodiode and each transfer transistor are arranged in a section isolated by the first pixel-to-pixel isolation region and the second pixel-to-pixel isolation region. Intersection regions of the first pixel-to-pixel isolation region and the second pixel-to-pixel isolation region are arranged in positions which differ from the floating diffusion and channel regions of the in-pixel transistors.
Inventors:
SEIJI TAKAHASHI (JP)
Application Number:
PCT/CN2020/130203
Publication Date:
May 27, 2022
Filing Date:
November 19, 2020
Export Citation:
Assignee:
HUAWEI TECH CO LTD (CN)
International Classes:
H01L27/146; H04N5/359; H04N5/374
Foreign References:
| CN111508979A | 2020-08-07 | |||
| CN103403869A | 2013-11-20 | |||
| CN110783352A | 2020-02-11 | |||
| CN101258599A | 2008-09-03 | |||
| US20160204144A1 | 2016-07-14 | |||
| US20110019050A1 | 2011-01-27 |
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