Title:
SOLID-STATE IMAGING ELEMENT, IMAGING DEVICE, AND METHOD FOR CONTROLLING SOLID-STATE IMAGING ELEMENT
Document Type and Number:
WIPO Patent Application WO/2024/116605
Kind Code:
A1
Abstract:
In this solid-state imaging element that uses a global shutter system, the dynamic range is enlarged. The solid-state imaging element is equipped with a first transfer transistor, a second transfer transistor, and an overflow gate. The first transfer transistor transfers charge from a photoelectric conversion element to a charge holding unit. The second transfer transistor transfers charge from one of the charge holding unit and the photoelectric conversion element to a first floating diffusion layer. The overflow gate causes charge overflowing from the photoelectric conversion element to be held in a second floating diffusion layer.
Inventors:
NUNOMURA KOJI (JP)
KUMAGAI YOSHIMICHI (JP)
KUMAGAI YOSHIMICHI (JP)
Application Number:
PCT/JP2023/036748
Publication Date:
June 06, 2024
Filing Date:
October 10, 2023
Export Citation:
Assignee:
SONY SEMICONDUCTOR SOLUTIONS CORP (JP)
International Classes:
H04N25/70; H04N25/771
Foreign References:
| JP2006245522A | 2006-09-14 | |||
| JP2017183563A | 2017-10-05 | |||
| JP2017536780A | 2017-12-07 |
Attorney, Agent or Firm:
MARUSHIMA, Toshikazu (JP)
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