SOLID-STATE NANOPORE MANUFACTURING METHOD AND SENSOR COMPRISING SOLID-STATE NANOPORE

Title:

SOLID-STATE NANOPORE MANUFACTURING METHOD AND SENSOR COMPRISING SOLID-STATE NANOPORE

Document Type and Number:

WIPO Patent Application WO/2022/047869

Kind Code:

A1

Abstract:

A solid-state nanopore manufacturing method and a sensor comprising a solid-state nanopore. Said manufacturing method comprises the following steps: depositing a SiN layer (14) on one side of a silicon substrate (12); depositing SiO2 layers (16a, 16b) on the SiN layer (14) and the other side of the silicon substrate (12) respectively; preparing an etching resist layer (20) on the SiO2 layer (16a) on said one side, etching the etching resist layer (20) and the SiO2 layer (16a) on said one side to form an etched groove (24a), the etching groove (24a) exposing said one side having the SiN layer (14), and removing the etching resist layer (20) from said one side; preparing an etching resist layer on the SiO2 layer (16b) on said other side, etching the etching resist layer and the SiO2 layer (16b) on said other side to form an etched groove (24b), the etched grooves (24a, 24b) on the two sides being aligned, the etched groove (24b) on said other side exposing the other side having the silicon substrate (12), and removing the etching resist layer from said other side; respectively printing gold electrodes (30a-d, 40a-d) on the SiO2 layers (16a, 16b) on the two sides; etching the silicon substrate (12) from the exposed part on said other side of the silicon substrate (12), so as to expose said other side having the SiN layer (14); and using a helium ion beam to pass through the exposed part of the SiN layer (14) to form a nanopore (62).

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Inventors:

FAN JIANLIN (CA)
ZHOU WENYI (CN)
MO ZIYI (CN)
ZHANG XINLIAN (CN)
LIU DAWEI (CN)
SUI GUODONG (CN)
MO HUI (CN)
YIN LIANGCHAO (CN)
WU MENG (CN)
LU DARU (CN)

Application Number:

PCT/CN2020/117819

Publication Date:

March 10, 2022

Filing Date:

September 25, 2020

Export Citation:

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Assignee:

SHENZHEN RUHAN GENE SCIENCE AND TECH LTD (CN)

International Classes:

B82Y15/00

Foreign References:

CN105776127A	2016-07-20
US20140374695A1	2014-12-25
CN109182484A	2019-01-11
CN102445480A	2012-05-09
US20080254995A1	2008-10-16

Attorney, Agent or Firm:

SHENZHEN XIECHENG INTELLECTUAL PROPERTY AGENCY (GENERAL PARTNERSHIP) (CN)

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