Sorting of Carbon Nanotubes

Description

The present invention relates to a process for preparing a composition comprising semiconduct- ing single-walled carbon nanotubes and a semiconducting polymer, to the composition comprising semiconducting single-walled carbon nanotubes and the semiconducting polymer, to an electronic device comprising a layer, which layer comprises semiconducting single-walled carbon nanotubes and a semiconducting polymer, and to the use of the composition comprising semiconducting single-walled carbon nanotubes and a semiconducting polymer as for forming a semiconducting layer.

Single-walled carbon nanotubes (SWNTs) show metallic or semiconducting properties depending on tube diameter and wrapping angle. A number of applications for SWNTs such as organic photovoltaic (OPV) devices and organic field effect transitors (OFETs) specifically require semi- conducting SWNTs with mimimal metallic SWNTs impurities. Unfortunately, all current growth methods for SWNTs such as arc discharge or laser ablation produce mixtures of semiconducting and metallic SWNTs.

Several methods of separating semiconducting SWNTs and metallic SWNTs are known, but most of them are not yet suitable for large-scale technological processes. An efficient method relies on dispersing semiconducting SWNTs and metallic SWNTs with polymer, followed by centrifugation.

Nish, A.; Hwang, J .-Y.; Doig, J .; Nicholas, R. J . Nat. Nano 2007, 2, 640-646 describes several polymers and copolymers comprising fluorene units as dispersants for SWNTs. Poly(9,9-diocyl- fluorenyl-2,7-diyl) (PFO) as dispersant shows the highest selectivity.

Berton, N .; Lemasson, F.; Tittmann, J.; Sturzl, N .; Hennrich, F.; Kappes, M .M .; Mayor, M . Chem. Mat. 201 1 , 23, 2237-2249 describes several copolymers comprising either fluorene or carbazole units separated by naphthalene, anthracene and anthraquinone spacer as dispersants for SWNTs.

Tange, M .; Okazaki, T.; lijima, S. J . Am. Chem. Soc. 201 1 , 133, 1 1908-1 191 1 describes poly(9,9-diocylfluorene-a/f-benzothiadiazole) (F8BT) and poly(9,9-di-n-dodecylfluorene )(PFD) as dispersants for SWNTs. In particular, F8BT selectively separates large (>1 .3 nm) diameter SWNTs.

Akazaki, K.; Toshimitsu, F.; Ozawa, H .; Fujigaya T.; Nakashima, N . J. Am. Chem. Soc. 2012, 134, 12700-12707 describes 12 copolymers (9,9-dioctylfluorene-2,7-diyl) _x ((R) - or (S)-2,2 - dimethoxy-1 , 1 '-binaphthalen-6,6-diyl) _y , where x and y are copolymer composition ratios, as dispersant for SWNTs. Jakubka, F.; Schiessl, S.P.; Martin, S.; Englert, J.M.; Hauke, F.; Hirsch A., Zaumseil, J. ACS Marco Lett. 2012, 1 , 815-819 describes poly(9,9-dioctylfluorene) and poly(9,9-dioctylfluorene- co-benzothiadiazole) as dispersants for SWNTs. Mistry, K.S.; Larsen, B.A.; Blackburn, J.L. ACS Nano 2013, 7, 2231 -2239 describes poly[(9,9- dioctylfluorenyl-2,7-diyl)-a/f-co-(6,6'-(2,2'-bipyridine))] and poly[(9,9-dihexylfluorenyl-2,7-diyl)-co- (9,10-anthracene)] as dispersants for laser vaporization SNWTs with average diameter of 1 .3 nm. Qian, L; Xu, W.; Fan, X.; Wang, C; Zhang, J.; Zhao, J.; Cui, Z. J. Phys. Chem. 2013, C1 17, 18243-18250 describes 9,9-dioctylfluorene-co-bithiophene as dispersant for SWNTs in order to selectively separate large diameter SWNTs from commercial arc discharge SWNTs.

Wang, H.; Mei, J.; Liu, P.; Schmidt, K.; Jimenez-Oses, G.; Osuna, S.; Fang, L.; Tassone, C.T.; Zoombelt, A.P.; Sokolov, A.N.; Houk K.N .; Toney, M.F.; Bao, Z. ACS Nano 2013, 7, 2659-2668 describes poly(dithiafulvalene-fluorene-co-m-thiophene) as dispersants for separating semiconducting SWNTs from arc-discharged 1 .1-1 .8 nm SWNTs.

Berton, N.; Lemasson, F.; Poschlad, A.; Meded, V.; Tristram F.; Wenzel, W.; Hennrich, F.;

Kappes, M.M.; Mayor, M . Small 2014, 10, 360-367 describes poly(fluorene-a/f-pyridine) copolymers each with 2,7-fluorene units but varying by the connectivity of the py dyl group as well as a poly(carbazole-a/f-pyridine) copolymer as dispersant for SWNTs to selectively separate large (> 1 nm and up to 1 .3 nm) diameter SWNTs. Semiconducting polymers as dispersant for SWNTs in separation processes based on centrifu- gation are particularly useful, as the product of the centrifugation process comprising the semiconducting polymer and the semiconducting SWNT can be used directly in the preparation of organic devices such as organic field effect transitors (OFETs). Lee, H. W.; Yoon, Y.; Park, S.; Oh, J. H.; Hong, S.; Liyanage, L. S.; Wan, H.; Morishita, S.; Patil, N.; Park, Y. J.; Park, J. J.; Spakowitz, A.; Galli, G., Gygi, F.; Wong, P. H.-S.; Tok, J. B.-H.; Kim, J. M .; Bao, Z. Nat. Commun. 201 1 , 2, 541-548 describes regioregular poly(3-alkylthiophene), which is commonly used as semiconducting material in organic electronic devices such as organic field effect transistors (OFETs), as dispersant for SWNTs. A transistor is described com- prising regioregular poly(3-alkylthiophene) and semiconducting SWNT.

US 2012/0104328 describes a polythiophene derivative including a thiophene ring and a hydrocarbon sidechain linked to the thiophene ring. A transistor is described comprising the polythiophene derivative and semiconducting SWNTs. Smithson, C; Wu, Y.; Wigglesworth, T.; Gardner, S.; Thu, S.; Nie H.-Y. Organic Electronics 2014, 15, 2639-2646 describes the fabrication of an organic thin film transistor using a semiconductor copolymer of diketppyrrolopyrrole-quarterthiophene and unsorted SWNTs. It was the object of the present invention to provide a process for the preparation of a composition comprising semiconducting single-walled carbon nanotubes and a semiconducting polymer, which composition is suitable for forming a semiconducting layer in an electronic device, preferably in an organic field effect transistor (OFET), and leading to OFETs showing a high charge carrier mobility and a high on/off ratio.

This object is solved by the process of claim 1 , the composition of claim 14, the process of claim 15, the electronic device of claim 16 and the use of claim 18.

The process of the present invention is a process for preparing a composition comprising semi- conducting single-walled carbon nanotubes, a semiconducting polymer and solvent A (composition A), which process comprises the step of separating composition A from a composition comprising semiconducting and metallic single-walled carbon nanotubes, the semiconducting polymer and solvent B (composition B), wherein the semiconducting polymer has a band gap in the range of 0.5 to 1.8 eV, and solvent A and solvent B comprise an aromatic or a heteroaro- matic solvent.

The band gap is the energy difference between the highest occupied molecular orbital (HOMO) and the lowest unoccupied molecular orbital (LUMO). The band gap (Eg ⁰ P') is determined from the absorption onset (λ onset) of the semiconducting polymer using the following equation:

Eg°p' [eV] = Planck constant [eV s] x speed of light [nm s ¹ ]/ λ onset [nm], wherein the absorption onset (λ onset) of the semiconducting polymer is determined from the thin film UV-Vis-N I R spectra of the semiconducting polymer at 25 °C and represents the wave- length at the intersection of the tangent at the most red shifted point of inflection of the absorption curve and the baseline (absorption = 0).

Figure 5 illustrates how to determine the absorption onset (λ onset) of the semiconducting polymer from the thin film UV-Vis-NIR spectra of the semiconducting polymer at 25 °C.

Preferably, the semiconducting polymer has a band gap in the range of 0.6 to 1.7 eV. Even more preferably, the semiconducting polymer has a band gap in the range of 0.8 to 1.6 eV. Most preferably, the semiconducting polymer has a band gap in the range of 1.0 to 1 .5 eV Aromatic solvents can be selected from the group consisting of benzene, naphthalene, biphenyl and mixtures thereof, which benzene, naphthalene and biphenyl can be substituted with one to four substitutents independently selected from the group consisting of halogen, Ci-20-alkyl, C2-20- alkenyl, C ₂ - ₂ o-alkynyl, C ₅ -i ₂ -cycloalkyl, CN, N0 ₂ , OH, SH, NR ¹⁰⁰⁰ R ²⁰⁰⁰ , CHO, CO-Ci- ₂₀ -alkyl, COO-Ci- ₂₀ -alkyl, CONR ¹⁰⁰⁰ R ²⁰⁰⁰ , O-C alkyl, S-Ci- ₂₀ -alkyl, O-C ₂ - ₂₀ -alkenyl and O-C ₂ - ₂₀ -alkynyl, and which benzene, naphthalene and biphenyl can be annulated with an -CH ₂ -CH ₂ -CH ₂ - or -CH ₂ -CH ₂ -CH ₂ -CH ₂ -, which -CH ₂ -CH ₂ -CH ₂ - or -CH ₂ -CH ₂ -CH ₂ -CH ₂ - can be substituted with Ci- ₂₀ - alkyl or 0-Ci- ₂ o-alkyl, or wherein one or two of the CH ₂ groups of -CH ₂ -CH ₂ -CH ₂ - or -CH ₂ -CH ₂ - CH ₂ -CH ₂ - can be replaced by O, S or N-R ¹⁰⁰⁰ , wherein R ¹⁰⁰⁰ and R ²⁰⁰⁰ are independently and at each occurrence H or Ci- ₂ o-alkyl,

wherein Ci- ₂ o-alkyl can be substituted with one or more halogen. Examples of aromatic solvents are benzene, toluene, o-xylene, m-xylene, p-xylene, 1 ,3,5- trimethylbenzene (mesitylene), 1 ,2,3-trimethylbenzene, 1 ,2,4-trimethylbenzene, chloro- benzene, 1 ,2-dichlorobenzene (ortho-dichlorobenzene), 1 ,3-dichlorobenzene, 1 ,2,4-tri- chlorobenzene, indane, tetraline, methoxybenzene (anisol), ethylbenzene, 1 ,2-diethylbenzene, 1 ,3-diethylbenzene, 1 ,4-diethylbenzene, propyl-benzene, butyl-benzene, tert-butyl-benzene, isopropylbenzene, 1 -methylnaphthalene, 2-methylnaphthalene and 1 -chloronaphthalene.

Heteroaromatic solvents can be selected from the group consisting of thiophene, furan, pyridine, pyrrole, pyrimidine and mixtures thereof, which thiophene, furan, pyridine, pyrrole and py- rimidine can be substituted with one to four substitutents independently selected from the group consisting of halogen, Ci- ₂ o-alkyl, C ₂ - ₂ o-alkenyl, C ₂ - ₂ o-alkynyl, Cs-i ₂ -cycloalkyl, CN, N0 ₂ , OH, SH, NR ¹⁰⁰⁰ R ²⁰⁰⁰ , CHO, CO-Ci- ₂₀ -alkyl, COO-Ci- ₂₀ -alkyl, CONR ¹⁰⁰⁰ R ²⁰⁰⁰ , O-Ci- ₂₀ -alkyl, S-Ci- ₂₀ -alkyl, 0-C ₂ - ₂ o-alkenyl and 0-C ₂ - ₂ o-alkynyl, and which thiophene, furan, pyridine, pyrrole and pyrimidine can be annulated with an -CH ₂ -CH ₂ -CH ₂ - or CH ₂ -CH ₂ -CH ₂ -CH ₂ -, which -CH ₂ -CH ₂ -CH ₂ - and CH ₂ -CH ₂ -CH ₂ -CH ₂ - can be substituted with Ci- ₂ o-alkyl or 0-Ci- ₂ o-alkyl, or wherein one or two of the CH ₂ groups of -CH ₂ -CH ₂ -CH ₂ - and CH ₂ -CH ₂ -CH ₂ -CH ₂ - can be replaced by O, S or N-R ¹⁰⁰⁰ , wherein R ¹⁰⁰⁰ and R ²⁰⁰⁰ are independently and at each occurrence H or Ci- ₂ o-alkyl,

wherein Ci- ₂ o-alkyl can be substituted with one or more halogen. Examples of heteroaromatic solvents are thiophene, 2-methyl-thiophene, 3-methyl-thiophene, pyridine, 2-methyl-pyridine, 3-methyl-pyridine, 4-methyl-pyridine, 2,4-dimethyl-pyridine and 2,4,6-trimethylpyridine.

Preferably, solvent B comprises an aromatic solvent.

More preferably, solvent B comprises at least 40% by weight of an aromatic solvent based on the weight of solvent B, which aromatic solvent is selected from the group consisting of benzene, toluene, o-xylene, m-xylene, p-xylene, 1 ,3,5-trimethylbenzene (mesitylene), 1 ,2,3- trimethylbenzene, 1 ,2,4-trimethylbenzene, chloro-benzene, 1 ,2-dichlorobenzene (ortho-dichlorobenzene), 1 ,3-dichlorobenzene, 1 ,2,4-trichlorobenzene, indane, tetraline, methoxybenzene (an- isol), ethylbenzene, propyl-benzene, butyl-benzene, tert-butyl-benzene, isopropylbenzen and mixtures thereof.

Even more preferably, solvent B comprises at least 60% by weight of an aromatic solvent based on the weight of solvent B, which aromatic solvent is selected from the group consisting of toluene, o-xylene, m-xylene, p-xylene, 1 ,3,5-trimethylbenzene (mesitylene), chloro-benzene, 1 ,2- dichlorobenzene (ortho-dichlorobenzene), indane, tetraline, methoxybenzene (anisol) and mixtures thereof. Most preferably, solvent B comprises at least 80% by weight of an aromatic solvent based on the weight of solvent B, which aromatic solvent is selected from the group consisting of toluene, mesitylene, chlorobenzene, ortho-dichlorobenzene, methoxybenzene (ansiol) and mixtures thereof. In particular, solvent B is toluene.

Preferably, compositon B contains 20 to 95% by weight of semiconducting single-walled carbon nanotubes and 80-5% by weight of metallic single-walled carbon nanotubes based on the sum of the weight of semiconducting and metallic single-walled carbon nanotubes.

More preferably, compositon B contains 50 to 90% by weight of semiconducting single-walled carbon nanotubes and 50-10% by weight of metallic single-walled carbon nanotubes based on the sum of the weight of semiconducting and metallic single-walled carbon nanotubes.

Most preferably, compositon B contains 60 to 80% by weight of semiconducting single-walled carbon nanotubes and 40-20% by weight of metallic single-walled carbon nanotubes based on the sum of the weight of semiconducting and metallic single-walled carbon nanotubes. In particular, compositon B contains 65 to 85% by weight of semiconducting single-walled carbon nanotubes and 35-25% by weight of metallic single-walled carbon nanotubes based on the sum of the weight of semiconducting and metallic single-walled carbon nanotubes.

Preferably, the diameter of the semiconducting and metallic single-walled carbon nanotubes in composition B is in the range of 0.5 to 5 nm. More preferably, the diameter of the semiconducting and metallic single-walled carbon nanotubes in composition B is in the range of 0.8 to 2.5 nm. Most preferably, the diameter of the semiconducting and metallic single-walled carbon nanotubes in composition B is in the range of 1 .0 to 2.0 nm. Preferably, the concentration of the sum of semiconducting and metallic single-walled carbon nanotubes in composition B is in the range of 0.001 to 3% by weight based on the weight of composition B. More preferably, the concentration of the sum of semiconducting and metallic single-walled carbon nanotubes in composition B is in the range of 0.01 to 2% by weight based on the weight of composition B. Most preferably, the concentration of the sum of semiconducting and metallic single-walled carbon nanotubes in composition B is in the range of 0.1 to 1 % by weight based on the weight of composition B.

Preferably, the weight ratio of the sum of semiconducting and metallic single-walled carbon nanotubes/semiconducting polymer in composition B is in the range of 0.01/1 to 10/1. Preferably, the weight ratio of the sum of semiconducting and metallic single-walled carbon nanotubes/semiconducting polymer in composition B is in the range of 0.05/1 to 5/1 . More preferably, the weight ratio of the sum of semiconducting and metallic single-walled carbon nanotubes/semiconducting polymer in composition B is in the range of 0.25/1 to 3/1.

For example, composition B can be prepared by mixing solvent B with the mixture of semiconducting and metallic single-walled carbon nanotubes. The mixture of semiconducting and metal- lie single-walled carbon nanotubes can be prepared by methods known in the art such as arc discharge, laser ablation or catalytic decomposition of carbon bearing molecules (CVD).

Preferably, the mixture of semiconducting and metallic single-walled carbon nanotubes is prepared by arc discharge.

Usually, composition B is mixed using ultrasonification before the separation step.

Preferably, composition A is separated from composition B by a centrifugation process. Preferably, the angular velocity used in the centrifugation process is in the range of 1 Ό00 to 100Ό00 rpm. More preferably, the angular velocity used in the centrifugation process is in the range of 5Ό00 to 50Ό00 rpm. Even more preferably, the angular velocity used in the centrifugation process is in the range of 10Ό00 to 30Ό00 rpm. Most preferably, the angular velocity used in the centrifugation process is in the range of 12Ό00 to 25Ό00 rpm. Any suitable type of centrifuge can be used in the centrifugation process such as microcentrifuge, high-speed centrifuge and ultracentrifuge. Preferably, a high-speed centrifuge is used.

Usually, the centrifugation process is performed at a temperature of 0 to 100 °C, more preferably 0 to 50 °C, even more preferably 0 to 30 °C, most preferably 5 to 20 °C, and in particular 10 to 20 °C.

Preferably, the centrifugation process is followed by the collection of the supernatant liquid, which can optionally be diluted with a solvent, in order to obtain composition A.

Preferably, solvent A comprises an aromatic solvent. More preferably, solvent A comprises at least 40% by weight of an aromatic solvent based on the weight of solvent A, which aromatic solvent is selected from the group consisting of benzene, toluene, o-xylene, m-xylene, p-xylene, 1 ,3,5-trimethylbenzene (mesitylene), 1 ,2,3- trimethylbenzene, 1 ,2,4-trimethylbenzene, chloro-benzene, 1 ,2-dichlorobenzene (ortho-dichloro- benzene), 1 ,3-dichlorobenzene, 1 ,2,4-trichlorobenzene, indane, tetraline, methoxybenzene (an- isol), ethylbenzene, propyl-benzene, butyl-benzene, tert-butyl-benzene, isopropylbenzen and mixtures thereof.

Even more preferably, solvent A comprises at least 60% by weight of an aromatic solvent based on the weight of solvent A, which aromatic solvent is selected from the group consisting of toluene, o-xylene, m-xylene, p-xylene, 1 ,3,5-trimethylbenzene (mesitylene), chloro-benzene, 1 ,2- dichlorobenzene (ortho-dichlorobenzene), indane, tetraline, methoxybenzene (anisol) and mixtures thereof. Most preferably, solvent A comprises at least 80% by weight of an aromatic solvent based on the weight of solvent A, which aromatic solvent is selected from the group consisting of toluene, mesitylene, chlorobenzene, ortho-dichlorobenzene, methoxybenzene (ansiol) and mixtures thereof. In particular, solvent A is toluene.

Composition A contains either essentially no metallic single-walled carbon nanotubes or, if metallic single-walled carbon nanotubes are present in composition A, the weight ratio of semicon- ducting single-walled carbon nanotubes/metallic single-walled carbon nanotubes of composition A is larger than the weight ratio of semiconducting single-walled carbon nanotubes/metallic single-walled carbon nanotubes of composition B.

Preferably, the semiconducting polymer is a polymer comprising at least one unit of formula

or of formula wherein

b and c are independently from each other 1 , 2, 3, 4, 5 or 6,

a and d are independently from each other 0, 1 , 2, 3 or 4,

n and m are independently from each other 0, 1 , 2, 3 or 4,

R ¹ is at each occurrence selected from the group consisting of H, Ci-100-alkyl, C2-ioo-alkenyl, C2- 100-alkynyl, C5-i2-cycloalkyl, C6-is-aryl, a 5 to 20 membered heteroaryl, C(0)-Ci-ioo-alkyl, C(0)-Cs- 12-cycloalkyl and C(0)-OCi-ioo-alkyl,

wherein Ci-100-alkyl, C2-ioo-alkenyl and C2-ioo-alkynyl can be substituted with one to fourty substituents independently selected from the group consisting of Cs-s-cycloalkyl, C6-i4-aryl, 5 to 14 membered heteroaryl, OR ^a , OC(0)-R ^a , C(0)-OR ^a , C(0)-R ^a , NR ^a R ^b , NR ^a -C(0)R ^b , C(0)-NR ^a R ^b , N[C(0)R ^a ][C(0)R ^b ], SR ^a , Si(R ^Sia )(R ^Sib )(R ^Sic ), -0-Si(R ^Sia )(R ^Sib )(R ^Sic ), halogen, CN, and N0 ₂ ; and at least two Ch -groups, but not adjacent Ch -groups, of Ci-100-alkyl, C2-ioo-alkenyl and C2-ioo-alkynyl can be replaced by O or S,

C5-i2-cycloalkyl can be substituted with one to six substituents independently selected from the group consisting of Ci-60-alkyl, C2-6o-alkenyl, C2-6o-alkynyl, Cs-s-cycloalkyl, C6-i4-aryl, 5 to 14 membered heteroaryl, OR ^a , OC(0)-R ^a , C(0)-OR ^a , C(0)-R ^a , NR ^a R ^b , NR ^a -C(0)R ^b , C(O)- NR ^a R ^b , N[C(0)R ^a ][C(0)R ^b ], SR ^a , Si(R ^Sia )(R ^Sib )(R ^Sic ), -0-Si(R ^Sia )(R ^Sib )(R ^Sic ), halogen, CN , and NO2; and one or two Ch -groups, but not adjacent Ch -groups, of Cs-12-cycloalkyl can be replaced by O, S, OC(O), CO, NR ^a or NR ^a -CO,

C6-i8-aryl and 5 to 20 membered heteroaryl can be substituted with one to six substituents independently selected from the group consisting of Ci-60-alkyl, C2-6o-alkenyl, C2-6o-alkynyl,

Cs-s-cycloalkyl, C ₆ -i ₄ -aryl, 5 to 14 membered heteroaryl, OR ^a , OC(0)-R ^a , C(0)-OR ^a , C(0)-R ^a , NR ^a R ^b , N R ^a -C(0)R ^b , C(0)-NR ^a R ^b , N[C(0)R ^a ][C(0)R ^b ], SR ^a , Si(R ^Sia )(R ^Sib )(R ^Sic ),

-0-Si(R ^Sia )(R ^Sib )(R ^Sic ), halogen, CN , and N0 ₂ , wherein

R ^a and R ^b are independently selected from the group consisting of H, Ci-6o-alkyl,

C2-6o-alkenyl, C2-6o-alkynyl, Cs-s-cycloalkyl, C6-i ₄ -aryl and 5 to 14 membered heteroaryl,

R ^Sia , R ^Sib and R ^Sic are independently selected from the group consisting of H, Ci-6o-alkyl, C2-6o-alkenyl, C2-6o-alkynyl, Cs-s-cycloalkyl, C6-i4-aryl, 5 to 14 membered heteroaryl, O-C1- 6o-alkyl, 0-C2-6o-alkenyl, 0-C2-6o-alkynyl, O-Cs-s-cycloalkyl, 0-C6-i4-aryl, 0-5 to 14 membered heteroaryl, -[0-SiR ^Sid R ^Sie ] ₀ -R ^Sif , NR ⁵ R ⁶ , halogen and 0-C(0)-R ⁵ ,

wherein

o is an integer from 1 to 50,

R ^Sid , R ^Sie , R ^Sif are independently selected from the group consisting of H, Ci-6o-alkyl, C2-6o-alkenyl, C2-6o-alkynyl, Cs-s-cycloalkyl, C6-i ₄ -aryl, 5 to 14 membered heteroaryl, O- Ci-6o-alkyl, 0-C2-6o-alkenyl, 0-C2-6o-alkynyl, O-Cs-s-cycloalkyl, 0-C6-i4-aryl, 0-5 to 14 membered heteroaryl, -[0-SiR ^Si 9R ^Sih ] _p -R ^Sii , NR ⁵⁰ R ⁶⁰ , halogen and 0-C(0)-R ⁵⁰ ;

wherein

p is an integer from 1 to 50,

Rag RSii _are independently selected from the group consisting of H , Ci-30-alkyl, C2-3o-alkenyl, C2-3o-alkynyl, Cs-6-cycloalkyl, C6-io-aryl, 5 to 10 membered heteroaryl, 0-Ci-3o-alkyl, 0-C2-3o-alkenyl, 0-C2-3o-alkynyl, O-Cs-6-cycloalkyl, 0-C6-io-aryl, 0-5 to 10 membered heteroaryl, 0-Si(CH ₃ ) ₃ , NR ⁵⁰⁰ R ⁶⁰⁰ , halogen and 0-C(0)-R ⁵⁰⁰ ,

R ⁵ , R ⁶ , R ⁵⁰ , R ⁶⁰ , R ⁵⁰⁰ and R ⁶⁰⁰ are independently selected from the group consisting of H, Ci-6o-alkyl, C2-6o-alkenyl, C2-6o-alkynyl, Cs-s-cycloalkyl, C6-i4-aryl, and 5 to 14 membered heteroaryl,

Ci-6o-alkyl, C2-6o-alkenyl and C2-6o-alkynyl can be substituted with one to twenty substituents selected from the group consisting of Cs-6-cycloalkyl, C6-io-aryl, OR ^c , OC(0)-R ^c , C(O)- OR ^c , C(0)-R ^c , NR ^c R ^d , NR ^c -C(0)R ^d , C(0)-NR ^c R ^d , N[C(0)R ^c ][C(0)R ^d ], SR ^C ,

Si(R ^Si (R ^Sik )(R ^Sil ), -O-Si(R ^Si (R ^Sik )(R ^Sil ), halogen, CN, and N0 ₂ ; and at least two CH ₂ - groups, but not adjacent Ch -groups, of Ci-6o-alkyl, C2-6o-alkenyl and C2-6o-alkynyl can be replaced by O or S,

Cs-s-cycloalkyl can be substituted with one to five substituents selected from the group consisting of Ci-30-alkyl, C2-3o-alkenyl, C2-3o-alkynyl, Cs-6-cycloalkyl, C6-io-aryl, OR ^c , OC(O)- R ^c , C(0)-OR ^c , C(0)-R ^c , N R ^c R ^d , NR ^c -C(0)R ^d , C(0)-NR ^c R ^d , N[C(0)R ^c ][C(0)R ^d ], SR ^C , Si(R ^Si (R ^Sik )(R ^Sil ), -O-Si(R ^Si (R ^Sik )(R ^Sil ), halogen, CN, and N0 ₂ ; and one or two CH ₂ - groups, but not adjacent Ch -groups, of Cs-s-cycloalkyl can be replaced by O, S, OC(O), CO, N R ^c or N R ^c -CO,

C6-i4-aryl and 5 to 14 membered heteroaryl can be substituted with one to five substituents independently selected from the group consisting of Ci-30-alkyl, C2-3o-alkenyl, C ₂ -3o-alkynyl, C ₅ - ₆ -cycloalkyl, C ₆ -io-aryl, OR ^c , OC(0)-R ^c , C(0)-OR ^c , C(0)-R ^c , NR ^c R ^d , NR ^C - C(0)R ^d , C(0)-NR ^c R ^d , N[C(0)R ^c ][C(0)R ^d ], SR ^C , Si(R ^Si (R ^Sik )(R ^Sil ), -O-Si(R ^Si (R ^Sik )(R ^Sil ), halogen, CN and N O2; wherein

R ^c and R ^d are independently selected from the group consisting of H, Ci-30-alkyl, C2-3o-alkenyl and C2-3o-alkynyl,

R ^s ' ^j , R ^Sik and R ^Sil are independently selected from the group consisting of H, Ci-30-alkyl, C2-3o-alkenyl, C2-3o-alkynyl, Cs-6-cycloalkyl, Ce-10-aryl, 5 to 10 membered heteroaryl, O- Ci-3o-alkyl, 0-C2-3o-alkenyl, 0-C2-3o-alkynyl, O-Cs-6-cycloalkyl, 0-C6-io-aryl, 0-5 to 10 membered heteroaryl, -[0-SiR ^Sim R ^Sin ] _q -R ^Sio , NR ⁷ R ⁸ , halogen, and 0-C(0)-R ⁷ ,

wherein

q is an integer from 1 to 50,

R ^Sim , R ^Sin , R ^Si0 are independently selected from the group consisting of H, Ci-30-alkyl, C2-3o-alkenyl, C2-3o-alkynyl, Cs-6-cycloalkyl, Ce-10-aryl, 5 to 10 membered heteroaryl, 0-Ci-3o-alkyl, 0-C2-3o-alkenyl, 0-C2-3o-alkynyl, O-Cs-6-cycloalkyl, 0-C6-io-aryl, 0-5 to 10 membered heteroaryl, -[0-SiR ^Si PR ^Sic i]rR ^Sir , NR ⁷⁰ R ⁸⁰ , halogen, and 0-C(0)-R ⁷⁰ ; wherein

r is an integer from 1 to 50,

R ^S 'P, R ^Sic i, R ^Sir are independently selected from the group consisting of H, C1-30- alkyl, C2-3o-alkenyl, C2-3o-alkynyl, Cs-6-cycloalkyl, Ce-10-aryl, 5 to 10 membered heteroaryl, O-Ci-30-alkyl, 0-C2-3o-alkenyl, 0-C2-3o-alkynyl, O-Cs-6-cycloalkyl, O- Ce-io-aryl, 0-5 to 10 membered heteroaryl, 0-Si(CH ₃ )3, NR ⁷⁰⁰ R ⁸⁰⁰ , halogen and 0-C(0)-R ⁷⁰⁰ ,

R ⁷ , R ⁸ , R ⁷⁰ , R ⁸⁰ , R ⁷⁰⁰ and R ⁸⁰⁰ are independently selected from the group consisting of H , Ci-3o-alkyl, C2-3o-alkenyl, C2-3o-alkynyl, Cs-6-cycloalkyl, Ce-10-aryl, and 5 to 10 membered heteroaryl,

Ci-3o-alkyl, C2-3o-alkenyl and C2-3o-alkynyl can be substituted with one to ten substitu- ents selected from the group consisting of halogen, CN and NO2,

L ¹ and are L ² are independently from each other and at each occurrence selected from the group consisting of C6-ie-arylene, 5 to 20 membered heteroarylene, wherein C6-i8-arylene and 5 to 20 membered heteroarylene can be substituted with one to six substituents R ³ at each occurrence selected from the group consisting of Ci-30-alkyl, C2-3o-alkenyl, C2-3o-alkynyl, Cs-i2-cycloalkyl, Ce-18-aryl and 5 to 20 membered heteroaryl, OR ³¹ , OC(0)-R ³¹ , C(0)-OR ³¹ , C(0)-R ³¹ , NR ³¹ R ³² , NR ¹ -C(0)R ³² , C(0)-NR ¹ R ³² , N[C(0)R ¹ ][C(0)R ³² ], SR ³¹ , halogen, CN, SiR ^Siv R ^Siw R ^Six and OH, and wherein can be substituted with one or two substituents R ⁴ at each occurrence selected from the group consisting of Ci-30-alkyl, C2-3o-alkenyl, C2-3o-alkynyl, Cs-12-cycloalkyl, Ce-18-aryl and 5 to 20 membered heteroaryl, C(0)-R ⁴¹ , C(0)-NR ⁴¹ R ⁴² , C(0)-OR ⁴¹ and CN, wherein

R ³¹ , R ³² , R ⁴¹ und R ⁴² are independently from each other and at each occurrence selected from the group consisting of H, Ci-30-alkyl, C2-3o-alkenyl, C2-3o-alkynyl, Cs-12-cycloalkyl, C6- 18-aryl and 5 to 20 membered heteroaryl, and wherein

Ci-3o-alkyl, C2-3o-alkenyl and C2-3o-alkynyl can be substituted with one to ten substituents independently selected from the group consisting of Cs-s-cycloalkyl, C6-i ₄ -aryl, 5 to 14 membered heteroaryl, OR, OC(0)-R, C(0)-OR, C(0)-R, NRR, NR-C(0)R, C(0)-NRR, N[C(0)R][C(0)R], SR, halogen, CN, SiR ^Siv R ^Siw R ^Six and N0 ₂ ; and at least two CH ₂ -groups, but not adjacent Ch -groups of Ci-30-alkyl, C2-3o-alkenyl and C2-3o-alkynyl can be replaced by O or S,

C5-i2-cycloalkyl can be substituted with one to six substituents independently selected from the group consisting of Ci-20-alkyl, C2-2o-alkenyl and C2-2o-alkynyl, Cs-s-cycloalkyl, Ce-14-aryl, 5 to 14 membered heteroaryl, OR, OC(0)-R, C(0)-OR, C(0)-R, NRR, NR- C(0)R, C(0)-NRR, N[C(0)R][C(0)R], SR, halogen, CN, SiR ^Siv R ^Siw R ^Six and N0 ₂ ; and one or two Ch -groups, but not adjacent Chb-groups, of Cs-12-cycloalkyl can be replaced by O, S, OC(O), CO, NR or NR-CO,

Ce-18-aryl and 5 to 20 membered heteroaryl can be substituted with one to six substituents independently selected from the group consisting of Ci-20-alkyl, C2-2o-alkenyl, C2-2o-alkynyl,

Cs-s-cycloalkyl, C ₆ -i ₄ -aryl, 5 to 14 membered heteroaryl, OR, OC(0)-R, C(0)-OR, C(0)-R, NRR, NR-C(0)R, C(0)-NRR, N[C(0)R][C(0)R], SR, halogen, CN, SiR ^Siv R ^Siw R ^Six and N0 ₂ , wherein R ^Siv , R ^Siw , R ^Six are independently from each other selected from the group consisting of H, Ci-2o-alkyl, C2-2o-alkenyl, C2-2o-alkynyl, Cs-6-cycloalkyl, phenyl and 0-Si(CH3)3,

R and R are independently selected from the group consisting of H, Ci-20-alkyl, C2-2o-alkenyl, C2-2o-alkynyl, Cs-s-cycloalkyl, C6-i4-aryl, and 5 to 14 membered heteroaryl, wherein

Ci-2o-alkyl, C2-2o-alkenyl and C2-2o-alkynyl can be substituted with one to five substit- uents selected from the group consisting of Cs-6-cycloalkyl, C6-io-aryl, 5 to 10 membered heteroaryl, OR ^k , OC(0)-R, C(0)-OR ^k , C(0)-R ^k , NR ^k R, NR ^k -C(0)R, C(O)- NR ^k R, N[C(0)R ^k ][C(0)R], SR ^k , halogen, CN, and N0 ₂ ;

Cs-s-cycloalkyl can be substituted with one to five substituents selected from the group consisting of Ci-10-alkyl, C2-io-alkenyl, C2-io-alkynyl, Cs-6-cycloalkyl, Ce-10-aryl, 5 to 10 membered heteroaryl, OR ^k , OC(0)-R, C(0)-OR ^k , C(0)-R ^k , NR ^k R, NR ^k -C(0)R, C(0)-NR ^k R, N[C(0)R ^k ][C(0)R], SR ^k , halogen, CN, and N0 ₂ ;

Ce-14-aryl and 5 to 14 membered heteroaryl can be substituted with one to five substituents independently selected from the group consisting of Ci-10-alkyl, C2-10- alkenyl, C2-io-alkynyl, Cs-6-cycloalkyl, C6-io-aryl, 5 to 10 membered heteroaryl, OR ^k , OC(0)-R, C(0)-OR ^k , C(0)-R ^k , NR ^k R, NR ^k -C(0)R, C(0)-NR ^k R, N[C(0)R ^k ][C(0)R],

SR ^k , halogen, CN, and N0 ₂ ; wherein

R ^k and R are independently selected from the group consisting of H, Ci-10-alkyl, C2-io-alkenyl and C2-io-alkynyl,

wherein

Ci-10-alkyl, C2-io-alkenyl and C2-io-alkynyl can be substituted with one to five substituents selected from the group consisting of halogen, CN and NO2,

L ³ and are L ⁴ are independently from each other and at each occurrence selected from the group consisting of C6-ie-arylene and 5 to 20 membered heteroarylene wherein

C6-i8-arylene and 5 to 20 membered heteroarylene can be substituted with one to six substituents R ⁹ at each occurrence selected from the group consisting of Ci-30-alkyl, C2-3o-alkenyl, C ₂ -3o-alkynyl, C ₅ -i ₂ -cycloalkyl, C ₆ -is-aryl and 5 to 20 membered heteroaryl, OR ⁹¹ , OC(0)-R ⁹¹ , C(0)-OR ⁹¹ , C(0)-R ⁹¹ , N R ⁹¹ R ⁹² , N R ⁹¹ -C(0)R ⁹² , C(0)-NR ⁹¹ R ⁹² , N[C(0)R ⁹¹ ][C(0)R ⁹² ], SR ⁹¹ , halogen, CN, SiR ^Si vR ^Siz R ^Siaa and OH, and wherein R ⁹¹ and R ⁹² are independently from each other and at each occurrence selected from the group consisting of H, Ci-30-alkyl, C2-3o-alkenyl, C2-3o-alkynyl, Cs-12-cycloalkyl, Ce-18-aryl and 5 to 20 membered heteroaryl, and wherein

Ci-3o-alkyl, C2-3o-alkenyl and C2-3o-alkynyl can be substituted with one to ten substituents independently selected from the group consisting of Cs-s-cycloalkyl, C6-i4-aryl, 5 to 14 membered heteroaryl, OR ^m , OC(0)-R ^m , C(0)-OR ^m , C(0)-R ^m , NR ^m R ⁿ , NR ^m -C(0)R ⁿ , C(O)- NR ⁿ R ^m , N[C(0)R ⁿ ][C(0)R ^m ], SR ⁿ , halogen, CN, SiR ^Si vR ^Siz R ^Siaa and N0 ₂ ; and at least two Ch -groups, but not adjacent Ch -groups of Ci-30-alkyl, C2-3o-alkenyl and C2-3o-alkynyl can be replaced by O or S,

C5-i2-cycloalkyl can be substituted with one to six substituents independently selected from the group consisting of Ci-20-alkyl, C2-2o-alkenyl and C2-2o-alkynyl, Cs-s-cycloalkyl, Ce-14-aryl, 5 to 14 membered heteroaryl, OR ^m , OC(0)-R ^m , C(0)-OR ^m , C(0)-R ^m , NR ^m R ⁿ ,

NR ^m -C(0)R ⁿ , C(0)-NR ^m R ⁿ , N[C(0)R ^m ][C(0)R ⁿ ], SR ^m , halogen, CN , SiR ^Si vR ^Siz R ^Siaa and NO2; and one or two Ch -groups, but not adjacent Ch -groups, of Cs-12-cycloalkyl can be replaced by O, S, OC(O), CO, NR ^m or NR ^m -CO, Ce-18-aryl and 5 to 20 membered heteroaryl can be substituted with one to six substituents independently selected from the group consisting of Ci-20-alkyl, C2-2o-alkenyl, C2-2o-alkynyl, Cs-s-cycloalkyl, C ₆ -i ₄ -aryl, 5 to 14 membered heteroaryl, OR ^m , OC(0)-R ^m , C(0)-OR ^m , C(0)-R ^m , N R ^m R ⁿ , N R ^m -C(0)R ⁿ , C(0)-NR ^m R ⁿ , N[C(0)R ^m ][C(0)R ⁿ ], SR ^m , halogen, CN,

SjRSiyRSizRSiaa _{and N} Q _2i

R ^s ' ^y , R ^Siz , R ^Siaa are independently from each other selected from the group consisting of H, Ci-20-alkyl, C2-2o-alkenyl, C2-2o-alkynyl, Cs-6-cycloalkyl, phenyl and 0-Si(CH3)3, wherein

R ^m and R ⁿ are independently selected from the group consisting of H, Ci-20-alkyl,

C2-2o-alkenyl, C2-2o-alkynyl, Cs-s-cycloalkyl, C6-i ₄ -aryl, and 5 to 14 membered heteroaryl,

Ci-20-alkyl, C2-2o-alkenyl and C2-2o-alkynyl can be substituted with one to five substituents selected from the group consisting of Cs-6-cycloalkyl, C6-io-aryl, 5 to 10 membered heteroaryl, OR ⁰ , OC(0)-R°, C(0)-OR°, C(0)-R°, N R°RP, N R°-C(0)RP, C(0)-N R°RP,

N [C(0)R°][C(0)RP], SR°, halogen, CN, and N0 ₂ ;

Cs-s-cycloalkyl can be substituted with one to five substituents selected from the group consisting of Ci-10-alkyl, C2-io-alkenyl, C2-io-alkynyl, Cs-6-cycloalkyl, C6-io-aryl, 5 to 10 membered heteroaryl, OR ⁰ , OC(0)-R°, C(0)-OR°, C(0)-R°, N R°RP, N R°-C(0)RP, C(0)-

N R°RP, N [C(0)R°][C(0)RP], SR°, halogen, CN , and N0 ₂ ; Ce-14-aryl and 5 to 14 membered heteroaryl can be substituted with one to five substitu- ents independently selected from the group consisting of Ci-10-alkyl, C2-io-alkenyl, C2-io-alkynyl, Cs-6-cycloalkyl, C6-io-aryl, 5 to 10 membered heteroaryl, OR ⁰ , OC(0)-R°, C(0)-OR°, C(0)-R°, N R°RP, N R°-C(0)RP, C(0)-N R°RP, N [C(0)R°][C(0)RP], SR°, halogen, CN, and N0 ₂ ; wherein

R° and RP are independently selected from the group consisting of H , Ci-10-alkyl, C2-io-alkenyl and C2-io-alkynyl,

wherein

Ci-io-alkyl, C2-io-alkenyl and C2-io-alkynyl can be substituted with one to five sub- stituents selected from the group consisting of halogen, CN and NO2,

A is selected from the group consisting of

A1 A2 A3 A4

A5 A6 A7

and

B is selected from the group consisting of

B1 B2 B3 B4

B5 B6 B7 wherein

X is at each occurrence O, S or N R ¹ ,

A1 , A2, A3, A4, A5, A6, A7, B1 , B2, B3, B4, B5, B6 or B7 can be substituted with one to three substituents R ² ,

R ² is at each occurrence selected from the group consisting of Ci-30-alkyl, C2-3o-alkenyl, C2-

3o-alkynyl, Cs-12-cycloalkyl, Ce-18-aryl, 5 to 20 membered heteroaryl, OR ²¹ , OC(0)-R ²¹ , C(0)-OR ²¹ , C(0)-R ²¹ , N R ²¹ R ²² , N R ²¹ -C(0)R ²² , C(0)-NR ²¹ R ²² , N[C(0)R ²¹ ][C(0)R ²² ], SR ²¹ , halogen, CN, SiR ^Sis R ^Sit R ^Siu and OH,

wherein

R ²¹ and R ²² and are independently selected from the group consisting of H, Ci-30-alkyl, C2-3o-alkenyl, C2-3o-alkynyl, Cs-i2-cycloalkyl, Ce-18-aryl and 5 to 20 membered heteroaryl, and Ci-3o-alkyl, C2-3o-alkenyl and C2-3o-alkynyl can be substituted with one to ten substituents independently selected from the group consisting of Cs-8-cycloalkyl, Ce-14-aryl, 5 to 14 membered heteroaryl, OR ^e , OC(0)-R ^e , C(0)-OR ^e , C(0)-R ^e , NR ^e R ^f , NR ^e -C(0)R ^f , C(0)-NR ^e R ^f , N[C(0)R ^e ][C(0)Rl, SR ^e , halogen, CN, SiR ^Sis R ^Sit R ^Siu and N0 ₂ ; and at least two Ch -groups, but not adjacent CH2-groups, of Ci-30-alkyl, C2-3o-alkenyl and C2-30- alkynyl can be replaced by O or S,

C5-i2-cycloalkyl can be substituted with one to six substituents independently selected from the group consisting of Ci-20-alkyl, C2-2o-alkenyl and C2-2o-alkynyl, Cs-s-cycloalkyl, Ce-14-aryl, 5 to 14 membered heteroaryl, OR ^e , OC(0)-R ^e , C(0)-OR ^e , C(0)-R ^e , NR ^e R ^f , NR ^e -C(0)R ^f , C(0)-NR ^e R ^f , N[C(0)R ^e ][C(0)R ^f ], SR ^e , halogen, CN, SiR ^Sis R ^Sit R ^Siu and N0 ₂ ; and one or two Ch -groups, but not adjacent Ch -groups, of Cs-12-cycloalkyl can be replaced by O, S, OC(O), CO, NR ^e or NR ^e -CO,

C6-i8-aryl and 5 to 20 membered heteroaryl can be substituted with one to six substitu- ents independently selected from the group consisting of Ci-20-alkyl, C2-2o-alkenyl, C2-20- alkynyl, C ₅ - ₈ -cycloalkyl, C ₆ -i ₄ -aryl, 5 to 14 membered heteroaryl, OR ^e , OC(0)-R ^e , C(O)- OR ^e , C(0)-R ^e , N R ^e R ^f , NR ^e -C(0)R ^f , C(0)-NR ^e R ^f , N[C(0)R ^e ][C(0)R ^f ], SR ^e , halogen, CN, SjRSisRSitRSiu _{and N} o _2i

R ^Sis , R ^Sit and R ^Siu are independently from each other selected from the group consisting of H , Ci-2o-alkyl, C2-2o-alkenyl, C2-2o-alkynyl, Cs-6-cycloalkyl, phenyl and 0-Si(CH3)3, wherein

R ^e and R ^f are independently selected from the group consisting of H, Ci-20-alkyl, C2-2o-alkenyl, C2-2o-alkynyl, Cs-s-cycloalkyl, C6-i4-aryl, and 5 to 14 membered heteroaryl,

Ci-2o-alkyl, C2-2o-alkenyl and C2-2o-alkynyl can be substituted with one to five substit- uents selected from the group consisting of Cs-6-cycloalkyl, C6-io-aryl, 5 to 10 membered heteroaryl, ORa, OC(0)-Ra, C(0)-ORo, C(0)-Ro, NRaR ^h , NRa-C(0)R ^h , C(O)- N R9R ^h , N[C(0)R9][C(0)R ^h ], SRa, halogen, CN, and N0 ₂ ;

Cs-s-cycloalkyl can be substituted with one to five substituents selected from the group consisting of Ci-io-alkyl, C2-io-alkenyl, C2-io-alkynyl, Cs-6-cycloalkyl, Ce-10-aryl, 5 to 10 membered heteroaryl, ORa, OC(0)-Ro, C(0)-ORa, C(0)-Ro, NRaR ^h , NRa- C(0)R ^h , C(0)-N R9R ^h , N[C(0)R9][C(0)R ^h ], SRa, halogen, CN, and N0 ₂ ;

Ce-14-aryl and 5 to 14 membered heteroaryl can be substituted with one to five substituents independently selected from the group consisting of Ci-io-alkyl, C2-10- alkenyl, C2-io-alkynyl, Cs-6-cycloalkyl, C6-io-aryl, 5 to 10 membered heteroaryl, ORa, OC(0)-Ro, C(0)-ORo, C(0)-Ro, NRaR ^h , NRa-C(0)R ^h , C(0)-NRaR ^h ,

N[C(0)R9][C(0)R ^h ], SR9, halogen, CN, and N0 ₂ ; wherein

R9 and R ^h are independently selected from the group consisting of H, Ci-10-alkyl, C2-io-alkenyl and C2-io-alkynyl,

wherein

Ci-io-alkyl, C2-io-alkenyl and C2-io-alkynyl can be substituted with one to five substituents selected from the group consisting of halogen, CN and NO2.

Halogen can be F, CI, Br and I.

Ci-4-alkyl, Ci-10-alkyl, Ci-20-alkyl, Ci-30-alkyl, Ci-36-alkyl, Ci-50-alkyl, Ci-60-alkyl and Ci-ioo-alkyl can be branched or unbranched. Examples of Ci _-4 -alkyl are methyl, ethyl, n-propyl, isopropyl, n- butyl, sec-butyl, isobutyl and ferf-butyl. Examples of Ci-io-alkyl are Ci _-4 -alkyl, n-pentyl, neopen- tyl, isopentyl, n-(1 -ethyl)propyl, n-hexyl, n-heptyl, n-octyl, n-(2-ethyl)hexyl, n-nonyl and n-decyl. Examples of Ci-20-alkyl are Ci-10-alkyl and n-undecyl, n-dodecyl, n-tridecyl, n-tetradecyl, n- pentadecyl, n-hexadecyl, n-heptadecyl, n-octadecyl, n-nonadecyl and n-icosyl (C20). Examples of Ci-3o-alkyl, Ci-36-alkyl, Ci-50-alkyl, Ci-60-alkyl and Ci-100-alkyl are Ci-20-alkyl and n-docosyl (C22), n-tetracosyl (C24), n-hexacosyl (C26), n-octacosyl (C28) and n-triacontyl (C30). C2-io-alkenyl, C2-2o-alkenyl, C2-3o-alkenyl, C2-6o-alkenyl and C2-ioo-alkenyl can be branched or unbranched. Examples of C2-io-alkenyl are vinyl, propenyl, c/s-2-butenyl, frans-2-butenyl, 3-butenyl, c/s-2-pentenyl, frans-2-pentenyl, c/s-3-pentenyl, frans-3-pentenyl, 4-pentenyl, 2- methyl-3-butenyl, hexenyl, heptenyl, octenyl, nonenyl and docenyl. Examples of C2-2o-alkenyl are C2-io-alkenyl and linoleyl (Cis), linolenyl (Cis), oleyl (Cis), and arachidonyl (C20). Examples of C2-3o-alkenyl, C2-6o-alkenyl and C2-ioo-alkenyl are C2-2o-alkenyl and erucyl (C22).

C2-io-alkynyl, C2-2o-alkynyl, C2-3o-alkynyl, C2-6o-alkynyl and C2-ioo-alkynyl can be branched or unbranched. Examples of C2-io-alkynyl are ethynyl, 2-propynyl, 2-butynyl, 3-butynyl, pentynyl, hexynyl, heptynyl, octynyl, nonynyl and decynyl. Examples of C2-2o-alkynyl, C2-3o-alkenyl, C2-60- alkynyl and C2-ioo-alkynyl are C2-io-alkynyl and undecynyl, dodecynyl, undecynyl, dodecynyl, tridecynyl, tetradecynyl, pentadecynyl, hexadecynyl, heptadecynyl, octadecynyl, nonadecynyl and icosynyl (C20).

Examples of Cs-6-cycloalkyl are cyclopentyl and cyclohexyl. Examples of Cs-8-cycloalkyl are C5-6- cycloalkyl and cycloheptyl and cyclooctyl. Cs-i2-cycloalkyl are Cs-8-cycloalkyl and cyclononyl, cyclodecyl, cycloundecyl and cyclododecyl.

Examples of Ce-14-aryl are Ce-10-aryl and

5 to 10 membered heteroaryl are 5 to 10 membered monocyclic or polycyclic, such as dicyclic, tricyclic or tetracyclic, ring systems, which comprise at least one heteroaromatic ring, and which may also comprise non-aromatic rings, which may be substituted by =0.

5 to 14 membered heteroaryl are 5 to 14 membered monocyclic or polycyclic, such as dicyclic, tricyclic or tetracyclic, ring systems, which comprise at least one heteroaromatic ring, and which may also comprise non-aromatic rings, which may be substituted by =0.

5 to 20 membered heteroaryl are 5 to 20 membered monocyclic or polycyclic, such as dicyclic, tricyclic or tetracyclic, ring systems, which comprise at least one heteroaromatic ring, and which may also comprise non-aromatic rings, which may be substituted by =0. examples of 5 to 14 membered heteroaryl are the examples given for the 5 to 10 membered heteroaryl and

examples of 5 to 20 membered heteroaryl are the examples given for the 5 to 14 membered heteroaryl and

wherein R ¹⁰⁰ and R ¹⁰¹ are independently and at each occurrence selected from the group consisting of H, Ci-2o-alkyl, C2-2o-alkenyl, C2-2o-alkynyl, Cs-s-cycloalkyl, C6-i4-aryl, and 5 to 14 membered heteroaryl, or R ¹⁰⁰ and R ¹⁰¹ , if attached to the same atom, together with the atom, to which they are attached, form a 5 to 12 membered ring system,

wherein

Ci-2o-alkyl, C2-2o-alkenyl and C2-2o-alkynyl can be substituted with one to five substituents selected from the group consisting of Cs-6-cycloalkyl, C6-io-aryl, 5 to 10 membered heteroaryl, OR^, OC(0)-Ri, C(0)-ORi, C(0)-R ^q , NR^R ^1" , NR ^q -C(0)R ^r , C(0)-NR ^q R ^r , N[C(0)R¾[C(0)Rn, SR ^q , halogen, CN, and N0 ₂ ;

Cs-s-cycloalkyl can be substituted with one to five substituents selected from the group consisting of Ci-io-alkyl, C2-io-alkenyl, C2-io-alkynyl, Cs-6-cycloalkyl, C6-io-aryl, 5 to 10 membered heteroaryl, OR^, OCiOJ-Ri, C(0)-ORi, C(0)-Ri, NR^R ^1" , NRi-C(0)R ^r , C(O)- NR ^q R ^r , N[C(0)R¾[C(0)Rn, SR^, halogen, CN, and N0 ₂ ;

Ce-14-aryl and 5 to 14 membered heteroaryl can be substituted with one to five substituents independently selected from the group consisting of Ci-io-alkyl, C2-io-alkenyl, C2-io-alkynyl, Cs-6-cycloalkyl, Ce-10-aryl, 5 to 10 membered heteroaryl, OR^, OC(0)-R ^< i, C(0)-OR ^q , C(0)-Ri, NR ^q R ^r , NR ^q -C(0)R ^r , C(0)-NR ^q R ^r , N[C(0)R¾[C(0)Rn, SR^, halo- gen, CN, and N0 ₂ ;

5 to 12 membered ring system can be substituted with one to five substituents selected from the group consisting of Ci-10-alkyl, C2-io-alkenyl, C2-io-alkynyl, Cs-6-cycloalkyl, Ce-ιο- aryl, 5 to 10 membered heteroaryl, OR^, OC(0)-Ri, C(0)-ORi, C(0)-Ri, NR^R ^1" , NR^- C(0)R ^r , C(0)-NR ^q R ^r , Ν[ΰ(0^][ΰ(0)^], SR^, halogen, CN, and N0 ₂ ; wherein

R ^q and R ^r are independently selected from the group consisting of H, Ci-10-alkyl, C2-io-alkenyl and C2-io-alkynyl,

wherein

Ci-io-alkyl, C2-io-alkenyl and C2-io-alkynyl can be substituted with one to five substituents selected from the group consisting of halogen, CN and NO2.

Ce-18-arylene is a 6 to 18 membered monocyclic or polycyclic, such as dicyclic, tricyclic or tetracyclic, ring system, which comprises at least one C-aromatic ring, and which may also comprise non-aromatic rings, which may be substituted by =0. wherein

R ¹⁰² and R ¹⁰³ are independently and at each occurrence selected from the group consisting of H, Ci-2o-alkyl, C2-2o-alkenyl, C2-2o-alkynyl, Cs-s-cycloalkyl, C6-i4-aryl, and 5 to 14 membered heteroaryl, or R ¹⁰² and R ¹⁰³ , if attached to the same atom, together with the atom, to which they are attached, form a 5 to 12 membered ring system,

wherein

Ci-2o-alkyl, C2-2o-alkenyl and C2-2o-alkynyl can be substituted with one to five substituents selected from the group consisting of Cs-6-cycloalkyl, C6-io-aryl, 5 to 10 membered heteroaryl, OR ^s , OC(0)-R*, C(0)-OR ^s , C(0)-R ^s , NR ^S R', NR ^s -C(0)R ^t , C(0)-NR ^s R ^t , Ν[0(0)^][0(0)^, SR ^S , halogen, CN, and N0 ₂ ;

Cs-s-cycloalkyl can be substituted with one to five substituents selected from the group consisting of Ci-io-alkyl, C2-io-alkenyl, C2-io-alkynyl, Cs-6-cycloalkyl, C6-io-aryl, 5 to 10 membered heteroaryl, OR ^s , OC(0)-R ^t , C(0)-OR ^s , C(0)-R ^s , NR ^S R', NR ^s -C(0)R ^t , C(O)- NR ^S R*, Ν[0(0)^][0(0)^, SR ^S , halogen, CN, and N0 ₂ ;

Ce-14-aryl and 5 to 14 membered heteroaryl can be substituted with one to five substituents independently selected from the group consisting of Ci-io-alkyl, C2-io-alkenyl, C2-io-alkynyl, Cs-6-cycloalkyl, C6-io-aryl, 5 to 10 membered heteroaryl, OR ^s , OC(0)-R', C(0)-OR ^s , C(0)-R ^s , NR ^S R*, NR ^s -C(0)R ^t , C(0)-NR ^s R ^t , Ν[0(0)^][0(0)^, SR ^S , halogen, CN, and N0 ₂ ;

5 to 12 membered ring system can be substituted with one to five substituents selected from the group consisting of Ci-10-alkyl, C2-io-alkenyl, C2-io-alkynyl, Cs-6-cycloalkyl, Ce-ιο- aryl, 5 to 10 membered heteroaryl, OR ^s , OC(0)-R', C(0)-OR ^s , C(0)-R ^s , NR ^S R', NR ^S - C(0)R ^t , C(0)-NR ^s R ^t , Ν[ΰ(0^ ³ ][ΰ(0)^, SR ^S , halogen, CN, and N0 ₂ ; wherein

R ^s and R' are independently selected from the group consisting of H, Ci-10-alkyl,

C2-io-alkenyl and C2-io-alkynyl,

wherein

Ci-io-alkyl, C2-io-alkenyl and C2-io-alkynyl can be substituted with one to five substituents selected from the group consisting of halogen, CN and NO2.

5 to 20 membered heteroarylene is a 5 to 20 membered monocyclic or polycyclic, such as dicy- clic, tricyclic or tetracyclic, ring system, which comprises at least one heteroaromatic ring, and which may also comprise non-aromatic rings, which may be substituted by =0. Examples of 5 to 20 membered heteroaryl

wherein

R ¹⁰⁴ and R ¹⁰⁵ are independently and at each occurrence selected from the group consisting of H , Ci-2o-alkyl, C ₂ -2o-alkenyl, C ₂ -2o-alkynyl, C ₅ -8-cycloalkyl, C6-i4-aryl, and 5 to 14 membered heteroaryl, or R ¹⁰⁴ and R ¹⁰⁵ , if attached to the same atom, together with the atom, to which they are attached, form a 5 to 12 membered ring system,

wherein

Ci-2o-alkyl, C2-2o-alkenyl and C2-2o-alkynyl can be substituted with one to five substitu- ents selected from the group consisting of C ₅ -6-cycloalkyl, C6-io-aryl, 5 to 10 membered heteroaryl, OR ^u , OC(0)-R ^u , C(0)-OR ^u , C(0)-R ^u , NR ^U R ^V , NR ^u -C(0)R ^v , C(0)-NR ^u R ^v , N[C(0)R ^u ][C(0)R ^v ], SR ^U , halogen, CN, and N0 ₂ ; C5-8-cycloalkyl can be substituted with one to five substituents selected from the group consisting of Ci-10-alkyl, C2-io-alkenyl, C2-io-alkynyl, Cs-6-cycloalkyl, C6-io-aryl, 5 to 10 membered heteroaryl, OR ^u , OC(0)-R ^u , C(0)-OR ^u , C(0)-R ^u , NR ^U R ^V , NR ^u -C(0)R ^v , C(O)- NR ^U R ^V , N[C(0)R ^u ][C(0)R ^v ], SR ^U , halogen, CN, and N0 ₂ ;

Ce-14-aryl and 5 to 14 membered heteroaryl can be substituted with one to five substituents independently selected from the group consisting of Ci-10-alkyl, C2-io-alkenyl, C2-io-alkynyl, Cs-6-cycloalkyl, C6-io-aryl, 5 to 10 membered heteroaryl, OR ^u , OC(0)-R ^v , C(0)-OR ^u , C(0)-R ^u , NR ^U R ^V , NR ^u -C(0)R ^v , C(0)-NR ^u R ^v , N[C(0)R ^u ][C(0)R ^v ], SR ^U , halogen, CN, and N0 ₂ ;

5 to 12 membered ring system can be substituted with one to five substituents selected from the group consisting of Ci-10-alkyl, C2-io-alkenyl, C2-io-alkynyl, Cs-6-cycloalkyl, Ce-ιο- aryl, 5 to 10 membered heteroaryl, OR ^u , OC(0)-R ^u , C(0)-OR ^u , C(0)-R ^u NR ^U R ^V , NR ^U -

C(0)R ^v , C(0)-NR ^u R ^v , N[C(0)R ^u ][C(0)R ^v ], SR ^U , halogen, CN, and N0 ₂ ;

wherein

R ^u and R ^v are independently selected from the group consisting of H, Ci-10-alkyl, C2-io-alkenyl and C2-io-alkynyl,

wherein

Ci-io-alkyl, C2-io-alkenyl and C2-io-alkynyl can be substituted with one to five substituents selected from the group consisting of halogen, CN and NO2.

The 5 to 12 membered ring system can contain, in addition to the atom, to which R ¹⁰⁰ and R ¹⁰¹ , respectively R ¹⁰² and R ¹⁰³ , respectively R ¹⁰⁴ and R ¹⁰⁵ , are attached, ring members selected from the group consisting of CH2, O, S and NR ^W , werein R ^w is at each occurrence selected from the group consisting of H, Ci-10-alkyl, C2-io-alkenyl and C2-io-alkynyl.

Preferably, the semiconducting polymer having a band gap in the range of 0.5 to 1.8 eV comprises at least 60% by weight of the units of formula (1 ) and/or (5), based on the weight of the polymer.

More preferably, the semiconducting polymer having a band gap in the range of 0.5 to 1.8 eV comprises at least 80% by weight of the units of formula (1 ) and/or (5), based on the weight of the polymer.

Even more preferably, the semiconducting polymer having a band gap in the range of 0.5 to 1.8 eV comprises at least 95% by weight of the units of formula (1 ) and/or (5), based on the weight of the polymer. Most preferably, the semiconducting polymer essentially consists of the units of formula (1 ) and/or (5).

Preferably, b and c are independently from each other 1 , 2, 3 or 4. More preferably, b and c are independently from each other 1 , 2 or 3.

Preferably, a and d are independently from each other 0, 1 , 2 or 3. More preferably, a and d are independently from each other 0, 1 or 2. Even more preferably, a and d are independently from each other 0 or 1 . Most preferably, a and d are 0.

Preferably, n is 0, 1 or 2, and m is 0, 1 or 2. More preferably, n is 0 or 1 , and m is 0, 1 or 2. Most preferably, n is 0, and m is 0, 1 or 2.

Preferably, R ¹ is at each occurrence selected from the group consisting of H, Ci-ioo-alkyl, C2-100- alkenyl, C2-ioo-alkynyl, Cs-12-cycloalkyl, Ce-18-aryl, and a 5 to 20 membered heteroaryl,

wherein

Ci-100-alkyl, C2-ioo-alkenyl and C2-ioo-alkynyl can be substituted with one to fourty substitu- ents independently selected from the group consisting of Cs-s-cycloalkyl, Ce-14-aryl, 5 to 14 membered heteroaryl, OR ^a , OC(0)-R ^a , C(0)-OR ^a , C(0)-R ^a , NR ^a -C(0)R ^b , C(0)-NR ^a R ^b , SR ^a , Si(R ^Sia )(R ^Sib )(R ^Sic ), -0-Si(R ^Sia )(R ^Sib )(R ^Sic ), halogen and CN ; and at least two CH ₂ - groups, but not adjacent Ch -groups, of Ci-100-alkyl, C2-ioo-alkenyl and C2-ioo-alkynyl can be replaced by O or S,

C5-i2-cycloalkyl can be substituted with one to six substituents independently selected from the group consisting of Ci-6o-alkyl, C2-6o-alkenyl, C2-6o-alkynyl, Cs-s-cycloalkyl, Ce-14-aryl, 5 to 14 membered heteroaryl, OR ^a , OC(0)-R ^a , C(0)-OR ^a , C(0)-R ^a , NR ^a -C(0)R ^b ,

C(0)-NR ^a R ^b , SR ^a , Si(R ^Sia )(R ^Sib )(R ^Sic ), -0-Si(R ^Sia )(R ^Sib )(R ^Sic ), halogen, and CN; and one or two Ch -groups, but not adjacent Chb-groups, of Cs-12-cycloalkyl can be replaced by O, S, OC(O), CO, N R ^a or N R ^a -CO, Ce-18-aryl and 5 to 20 membered heteroaryl can be substituted with one to six substituents independently selected from the group consisting of Ci-60-alkyl, C2-6o-alkenyl, C2-6o-alkynyl, Cs-s-cycloalkyl, C ₆ -i ₄ -aryl, 5 to 14 membered heteroaryl, OR ^a , OC(0)-R ^a , C(0)-OR ^a , C(O)- R ^a , N R ^a -C(0)R ^b , C(0)-NR ^a R ^b , SR ^a , Si(R ^Sia )(R ^Sib )(R ^Sic ), -0-Si(R ^Sia )(R ^Sib )(R ^Sic ), halogen, and CN, wherein R ^a and R ^b are independently selected from the group consisting of H, Ci-6o-alkyl, C2-6o-alkenyl, C2-6o-alkynyl, Cs-s-cycloalkyl, C6-i4-aryl and 5 to 14 membered heteroaryl,

R ^Sia , R ^Sib and R ^Sic are independently selected from the group consisting of H,

Ci-6o-alkyl, C2-6o-alkenyl, C2-6o-alkynyl, Cs-s-cycloalkyl, C6-i ₄ -aryl, 5 to 14 membered heteroaryl, 0-Ci-6o-alkyl, 0-C ₂ - ₆ o-alkenyl, 0-C ₂ - ₆ o-alkynyl, 0-C ₅ - ₈ -cycloalkyl, -[0-SiR ^Sid R ^Sie ] ₀ - R ^Sif ,

wherein

o is an integer from 1 to 50,

R ^Sid , R ^Sie and R ^Sif are independently selected from the group consisting of H, C1-60- alkyl, C ₂ -6o-alkenyl, C ₂ -6o-alkynyl, C ₅ - ₈ -cycloalkyl, C ₆ -i ₄ -aryl, -[0-SiR ^Si 9R ^Sih ] _p -R ^Sii , wherein

p is an integer from 1 to 50,

Rag pah _anc | RSii _are independently selected from the group consisting of H , Ci-3o- alkyl, C ₂ -3o-alkenyl, C ₂ - ₃ o-alkynyl, Cs-e-cycloalkyl, C ₆ -io-aryl, 0-Si(CH ₃ )3,

R ⁵ , R ⁶ , R ⁵⁰ , R ⁶⁰ , R ⁵⁰⁰ and R ⁶⁰⁰ are independently selected from the group consisting of H , Ci-6o-alkyl, C2-6o-alkenyl, C2-6o-alkynyl, Cs-s-cycloalkyl, C6-i ₄ -aryl, and 5 to 14 membered heteroaryl,

Ci-6o-alkyl, C2-6o-alkenyl and C2-6o-alkynyl can be substituted with one to twenty sub- stituents selected from the group consisting of Cs-6-cycloalkyl, Ce-10-aryl, OR ^c , OC(0)-R ^c , C(0)-OR ^c , C(0)-R ^c , NR ^c -C(0)R ^d , C(0)-NR ^c R ^d , SR ^C , Si(R ^Si (R ^Sik )(R ^Sil ), -O-Si(R ^Si (R ^Sik )(R ^Sil ), halogen, and CN; and at least two CH ₂ -groups, but not adjacent Ch -groups, of Ci-6o-alkyl, C2-6o-alkenyl and C2-6o-alkynyl can be replaced by O or S,

Cs-s-cycloalkyl can be substituted with one to five substituents selected from the group consisting of Ci-30-alkyl, C2-3o-alkenyl, C2-3o-alkynyl, Cs-6-cycloalkyl, Ce-10-aryl, OR ^c , OC(0)-R ^c , C(0)-OR ^c , C(0)-R ^c , NR ^c -C(0)R ^d , C(0)-NR ^c R ^d , SR ^C ,

Si(R ^Si (R ^Sik )(R ^Sil ), -O-Si(R ^Si (R ^Sik )(R ^Sil ), halogen, and CN; and one or two CH ₂ - groups, but not adjacent Chb-groups, of Cs-s-cycloalkyl can be replaced by O, S, OC(O), CO, N R ^c or N R ^c -CO,

C6-i ₄ -aryl and 5 to 14 membered heteroaryl can be substituted with one to five substituents independently selected from the group consisting of Ci-30-alkyl, C2-30- alkenyl, C ₂ - ₃ o-alkynyl, C ₅ - ₆ -cycloalkyl, C ₆ -io-aryl, OR ^c , OC(0)-R ^c , C(0)-OR ^c , C(0)-R ^c , NR ^c -C(0)R ^d , C(0)-NR ^c R ^d , SR ^C , Si(R ^Si (R ^Sik )(R ^Sil ), -O-Si(R ^Si (R ^Sik )(R ^Sil ), halogen and CN; wherein R ^c and R ^d are independently selected from the group consisting of H, Ci-30-alkyl, C2-3o-alkenyl and C2-3o-alkynyl,

R ^s 'j, R ^Sik and R ^Sil are independently selected from the group consisting of H, Ci-30-alkyl, C ₂ - ₃ o-alkenyl, C ₂ - ₃ o-alkynyl, C ₅ - ₆ -cycloalkyl, C ₆ -io-aryl, -[0-SiR ^Sim R ^Sin ] _q -

R ^Si0 ,

wherein

q is an integer from 1 to 50, R ^Sim , R ^Sin , R ^Si0 are independently selected from the group consisting of H , Ci-

3o-alkyl, C2-3o-alkenyl, C2-3o-alkynyl, Cs-6-cycloalkyl, Ce-10-aryl, 5 to 10 mem- bered heteroaryl, O-Ci-30-alkyl, 0-C2-3o-alkenyl, 0-C2-3o-alkynyl, O-C5-6- cycloalkyl, 0-C ₆ -io-aryl, 0-5 to 10 membered heteroaryl, -[0-SiR ^Si PR ^Sk i]rR ^Sir , NR ⁷⁰ R ⁸⁰ , halogen, and 0-C(0)-R ⁷⁰ ;

wherein

r is an integer from 1 to 50,

R ^S 'P, R ^Sic i, R ^Sir are independently selected from the group consisting of H, Ci-3o-alkyl, C2-3o-alkenyl, C2-3o-alkynyl, Cs-6-cycloalkyl, Ce-10-aryl, 5 to 10 membered heteroaryl, O-Ci-30-alkyl, 0-C2-3o-alkenyl, 0-C2-3o-alkynyl, O- C5-6-cycloalkyl, 0-C6-io-aryl, 0-5 to 10 membered heteroaryl, 0-Si(CH3)3,

NR ⁷⁰⁰ R ⁸⁰⁰ , halogen and 0-C(0)-R ⁷⁰⁰ ,

R ⁷ , R ⁸ , R ⁷⁰ , R ⁸⁰ , R ⁷⁰⁰ and R ⁸⁰⁰ are independently selected from the group consisting of H, Ci-3o-alkyl, C2-3o-alkenyl, C2-3o-alkynyl, Cs-6-cycloalkyl, Ce-10-aryl, and 5 to 10 membered heteroaryl,

Ci-3o-alkyl, C2-3o-alkenyl and C2-3o-alkynyl can be substituted with one to ten sub- stituents selected from the group consisting of halogen and CN.

More preferably, R ¹ is at each occurrence selected from the group consisting of Ci-100-alkyl, C2-ioo-alkenyl and C2-ioo-alkynyl,

wherein Ci-100-alkyl, C2-ioo-alkenyl and C2-ioo-alkynyl can be substituted with one to fourty substitu- ents independently selected from the group consisting of Cs-8-cycloalkyl, Ce-14-aryl, 5 to 14 membered heteroaryl, OR ^a , OC(0)-R ^a , C(0)-OR ^a , C(0)-R ^a , NR ^a -C(0)R ^b , C(0)-NR ^a R ^b , SR ^a , Si(R ^Sia )(R ^Sib )(R ^Sic ), -0-Si(R ^Sia )(R ^Sib )(R ^Sic ), halogen, and CN; and at least two CH ₂ - groups, but not adjacent Ch -groups, of Ci-100-alkyl, C2-ioo-alkenyl and C2-ioo-alkynyl can be replaced by O or S, wherein R ^a and R ^b are independently selected from the group consisting of H, Ci-6o-alkyl, C2-6o-alkenyl, C2-6o-alkynyl, Cs-s-cycloalkyl, C6-i4-aryl and 5 to 14 membered heteroaryl,

R ^Sia , R ^Sib and R ^Sic are independently selected from the group consisting of H,

Ci-eo-alkyl, C _2- 6o-alkenyl, C _2- 6o-alkynyl, C ₅ - ₈ -cycloalkyl, C ₆ -i ₄ -aryl, -[0-SiR ^Sid R ^Sie ] ₀ -R ^Sif , wherein

o is an integer from 1 to 50,

R ^Sid , R ^Sie and R ^Sif are independently selected from the group consisting of H, Ci-βο- alkyl, C _2- 6o-alkenyl, C _2-6 o-alkynyl, C ₅ - ₈ -cycloalkyl, C ₆ -i ₄ -aryl, -[0-SiR ^Si 9R ^Sih ] _p -R ^Sii , wherein

p is an integer from 1 to 50,

Rag RSii _are independently selected from the group consisting of H, C ₁ -30- alkyl, C ₂ - ₃ o-alkenyl, C ₂ - ₃ o-alkynyl, C ₅ -6-cycloalkyl, C ₆ -io-aryl, 0-Si(CH ₃ )3,

R ⁵ , R ⁶ , R ⁵⁰ , R ⁶⁰ , R ⁵⁰⁰ and R ⁶⁰⁰ are independently selected from the group consisting of H , Ci-6o-alkyl, C ₂ -6o-alkenyl, C ₂ -6o-alkynyl, Cs-s-cycloalkyl, C6-i ₄ -aryl, and 5 to 14 membered heteroaryl,

Ci-6o-alkyl, C ₂ -6o-alkenyl and C ₂ -6o-alkynyl can be substituted with one to twenty substituents selected from the group consisting of Cs-6-cycloalkyl, C6-io-aryl, OR ^c , OC(0)-R ^c , C(0)-OR ^c , C(0)-R ^c , NR ^c -C(0)R ^d , C(0)-NR ^c R ^d , SR ^C , Si(R ^Si (R ^Sik )(R ^Sil ), -O-Si(R ^Si (R ^Sik )(R ^Sil ), halogen, and CN; and at least two CH ₂ -groups, but not adjacent CH ₂ -groups, of Ci-60-alkyl, C ₂ -6o-alkenyl and C ₂ -6o-alkynyl can be replaced by O or S,

Cs-s-cycloalkyl can be substituted with one to five substituents selected from the group consisting of Ci-30-alkyl, C ₂ -3o-alkenyl, C ₂ -3o-alkynyl, Cs-6-cycloalkyl, Ce-10-aryl, OR ^c , OC(0)-R ^c , C(0)-OR ^c , C(0)-R ^c , NR ^c -C(0)R ^d , C(0)-NR ^c R ^d , SR ^C ,

Si(R ^Si (R ^Sik )(R ^Sil ), -O-Si(R ^Si (R ^Sik )(R ^Sil ), halogen, and CN; and one or two CH ₂ - groups, but not adjacent CH ₂ -groups, of Cs-s-cycloalkyl can be replaced by O, S, OC(O), CO, N R ^c or N R ^c -CO,

C6-i ₄ -aryl and 5 to 14 membered heteroaryl can be substituted with one to five substituents independently selected from the group consisting of Ci-30-alkyl, C ₂ -3o- alkenyl, C ₂ - ₃₀ -alkynyl, C ₅ - ₆ -cycloalkyl, C ₆ -io-aryl, OR ^c , OC(0)-R ^c , C(0)-OR ^c , C(0)-R ^c , NR ^c -C(0)R ^d , C(0)-NR ^c R ^d , SR ^C , Si(R ^Si (R ^Sik )(R ^Sil ), -O-Si(R ^Si (R ^Sik )(R ^Sil ), halogen, and CN; wherein

R ^c and R ^d are independently selected from the group consisting of H, Ci C ₂ -3o-alkenyl and C ₂ -3o-alkynyl, R ^s ' ^j , R ^Sik and R ^Sil are independently selected from the group consisting of H, Ci-30-alkyl, C ₂ -3o-alkenyl, C ₂ - ₃ o-alkynyl, C ₅ - ₆ -cycloalkyl, C ₆ -io-aryl, -[0-SiR ^Sim R ^Sin ] _q - R ^Si0 ,

wherein

q is an integer from 1 to 50,

R ^Sim , R ^Sin , R ^Si0 are independently selected from the group consisting of H, Ci- 3o-alkyl, C ₂ - ₃ o-alkenyl, C ₂ - ₃ o-alkynyl, C ₅ - ₆ -cycloalkyl, C ₆ -io-aryl, -[0-SiR ^SI PR ^Sic i]r R ^Sir ,

wherein

r is an integer from 1 to 50,

R ^S 'P, R ^Sic i, R ^Sir are independently selected from the group consisting of H, Ci-3o-alkyl, C ₂ - ₃ o-alkenyl, C ₂ - ₃ o-alkynyl, C ₅ -6-cycloalkyl, C ₆ -io-aryl, O- Si(CH ₃ ) ₃ ,

R ⁷ , R ⁸ , R ⁷⁰ , R ⁸⁰ , R ⁷⁰⁰ and R ⁸⁰⁰ are independently selected from the group consisting of H, Ci- ₃ o-alkyl, C ₂ - ₃ o-alkenyl, C ₂ - ₃ o-alkynyl, Cs-6-cycloalkyl, Ce-10-aryl, and 5 to 10 membered heteroaryl,

Ci- ₃ o-alkyl, C ₂ - ₃ o-alkenyl and C ₂ - ₃ o-alkynyl can be substituted with one to ten sub- stituents selected from the group consisting of halogen and CN.

Even more preferably, R ¹ is at each occurrence selected from the group consisting of Ci-50-alkyl, C ₂ -5o-alkenyl and C ₂ -so-alkynyl, wherein

Ci-5o-alkyl, C ₂ -so-alkenyl and C ₂ -so-alkynyl can be substituted with one to twenty substitu- ents independently selected from the group consisting of Cs-6-cycloalkyl, C6-io-aryl, 5 to 10 membered heteroaryl, OR ^a , SR ^a , Si(R ^Sia )(R ^Sib )(R ^Sic ), -0-Si(R ^Sia )(R ^Sib )(R ^Sic ), halogen, and CN; and at least two CH ₂ -groups, but not adjacent CH ₂ -groups, of Ci-50-alkyl, C ₂ -so-alkenyl and C ₂ -5o-alkynyl can be replaced by O or S, wherein

R ^a and R ^b are independently selected from the group consisting of H, Ci- ₃ o-alkyl,

C ₂ - ₃ o-alkenyl, C ₂ - ₃ o-alkynyl, Cs-6-cycloalkyl and Ce-10-aryl,

R ^Sia , R ^Sib and R ^Sic are independently selected from the group consisting of H , Ci- ₃ o-alkyl, C ₂ - ₃₀ -alkenyl, C ₂ - ₃₀ -alkynyl, C ₅ - ₆ -cycloalkyl, C ₆ -io-aryl, -[0-SiR ^Sid R ^Sie ] ₀ -R ^Sif ,

wherein

o is an integer from 1 to 50, R ^Sid , R ^Sie , R ^Sif are independently selected from the group consisting of H, Ci-30-alkyl, C ₂ - ₃₀ -alkenyl, C ₂ - ₃₀ -alkynyl, C ₅ - ₆ -cycloalkyl, C ₆ -io-aryl, -[0-SiR ^Si 9R ^Sih ] _p -R ^Sii ,

wherein

p is an integer from 1 to 50,

Rag RSii _are independently selected from the group consisting of H, Ci-30-alkyl, C ₂ -3o-alkenyl, C ₂ -3o-alkynyl, C ₅ -6-cycloalkyl, C ₆ -io-aryl, 0-Si(CH ₃ )3,

R ⁵ , R ⁶ , R ⁵⁰ , R ⁶⁰ , R ⁵⁰⁰ and R ⁶⁰⁰ are independently selected from the group consisting of H, Ci-3o-alkyl, C ₂ -3o-alkenyl, C ₂ -3o-alkynyl, Cs-6-cycloalkyl, Ce-10-aryl, and 5 to 10 membered heteroaryl,

Ci-3o-alkyl, C ₂ -3o-alkenyl and C ₂ -3o-alkynyl can be substituted with one to ten substituents selected from the group consisting of halogen and CN.

Most preferably, R ¹ is at each occurrence selected from the group consisting of Ci-36-alkyl, C ₂ -36-alkenyl and C ₂ -36-alkynyl,

wherein

Ci-36-alkyl, C ₂ -36-alkenyl and C ₂ -36-alkynyl can be substituted with one to twenty substituents independently selected from the group consisting of Cs-6-cycloalkyl, C6-io-aryl, 5 to 10 membered heteroaryl, OR ^a , SR ^a , Si(R ^Sia )(R ^Sib )(R ^Sic ), -0-Si(R ^Sia )(R ^Sib )(R ^Sic ), halogen, and CN ; and at least two CH ₂ -groups, but not adjacent CH ₂ -groups, of Ci-36-alkyl, C ₂ -36-alkenyl and C ₂ -36-alkynyl can be replaced by O or S, wherein

R ^a and R ^b are independently selected from the group consisting of H , Ci- ₂ o-alkyl, C ₂ - ₂ o-alkenyl, C ₂ - ₂ o-alkynyl, Cs-6-cycloalkyl and C6-io-aryl

R ^Sia , R ^Sib and R ^Sic are independently selected from the group consisting of H, Ci- ₂₀ -alkyl, C ₂ - ₂₀ -alkenyl, C ₂ - ₂₀ -alkynyl, C ₅ - ₆ -cycloalkyl, C ₆ -io-aryl, -[0-SiR ^Sid R ^Sie ] ₀ -R ^Sif wherein o is an integer from 1 to 50,

R ^Sid , R ^Sie , R ^Sif are independently selected from the group consisting of H , Ci-30-alkyl, C ₂ - ₂₀ -alkenyl, C ₂ - ₂₀ -alkynyl, C ₅ - ₆ -cycloalkyl, C ₆ -io-aryl, -[0-SiR ^Si 9R ^Sih ] _p -R ^Sii , wherein

p is an integer from 1 to 50, Rag RSii _are independently selected from the group consisting of H, C1-30- alkyl, C2-2o-alkenyl, C2-2o-alkynyl, Cs-6-cycloalkyl, Ce-10-aryl, 0-Si(CH3)3,

R ⁵ , R ⁶ , R ⁵⁰ , R ⁶⁰ , R ⁵⁰⁰ and R ⁶⁰⁰ are independently selected from the group consisting of H , Ci-20-alkyl, C2-2o-alkenyl, C2-2o-alkynyl, Cs-6-cycloalkyl, Ce-10-aryl, and 5 to 10 membered heteroaryl,

Ci-20-alkyl, C2-2o-alkenyl and C2-2o-alkynyl can be substituted with one to ten substituents selected from the group consisting of halogen and CN .

In particular, R ¹ is at each occurrence unsubstituted Ci-36-alkyl.

Preferably, L ¹ and L ² are independently from each other and at each occurrence selected from the group consisting of C6-ie-arylene, 5 to 20 membered heteroarylene,

an

wherein

Ce-18-arylene and 5 to 20 membered heteroarylene can be substituted with one to six substituents R ³ at each occurrence selected from the group consisting of Ci-30-alkyl, C2-3o-alkenyl, C2-3o-alkynyl, Cs-i2-cycloalkyl, Ce-18-aryl and 5 to 20 membered heteroaryl, OR ³¹ , OC(0)-R ³¹ , C(0)-OR ³¹ , C(0)-R ³¹ , N R ³¹ R ³² , N R ¹ -C(0)R ³² , C(0)-NR ¹ R ³² , SR ³¹ , halogen, CN , SiR- sivRSiwRSix and OH, and wherein

can be substituted with one or two substituents R ⁴ at each occurrence selected from the group consisting of Ci-30-alkyl, C2-3o-alkenyl, C2-3o-alkynyl, Cs-i2-cycloalkyl, Ce-18-aryl and 5 to 20 membered heteroaryl, C(0)-R ⁴¹ , C(0)-N R ⁴¹ R ⁴² , C(0)-OR ⁴¹ and CN , wherein

R ³¹ , R ³² , R ⁴¹ und R ⁴² are independently from each other and at each occurrence selected from the group consisting of H, Ci-30-alkyl, C2-3o-alkenyl, C2-3o-alkynyl, Cs-i2-cycloalkyl, C6-

18-aryl and 5 to 20 membered heteroaryl, and wherein

Ci-3o-alkyl, C2-3o-alkenyl and C2-3o-alkynyl can be substituted with one to ten substituents independently selected from the group consisting of Cs-s-cycloalkyl, C6-i ₄ -aryl, 5 to 14 membered heteroaryl, OR, OC(0)-R, C(0)-OR, C(0)-R, N RR, N R-C(0)R, C(0)-N RR, N[C(0)R][C(0)R], SR', halogen, CN, SiR ^Siv R ^Siw R ^Six and N0 ₂ ; and at least two CH ₂ -groups, but not adjacent CH2-groups of Ci-30-alkyl, C2-3o-alkenyl and C2-3o-alkynyl can be replaced by O or S,

C5-i2-cycloalkyl can be substituted with one to six substituents independently selected from the group consisting of Ci-20-alkyl, C2-2o-alkenyl and C2-2o-alkynyl, Cs-s-cycloalkyl, Ce-14-aryl, 5 to 14 membered heteroaryl, OR, OC(0)-R, C(0)-OR, C(0)-R, NRR, NR- C(0)R, C(0)-NRR, N[C(0)R][C(0)R], SR, halogen, CN, SiR ^Siv R ^Siw R ^Six and N0 ₂ ; and one or two Ch -groups, but not adjacent CH2-groups, of Cs-12-cycloalkyl can be replaced by O, S, OC(O), CO, NR or NR-CO,

Ce-18-aryl and 5 to 20 membered heteroaryl can be substituted with one to six substituents independently selected from the group consisting of Ci-20-alkyl, C2-2o-alkenyl, C2-2o-alkynyl, Cs-s-cycloalkyl, C ₆ -i ₄ -aryl, 5 to 14 membered heteroaryl, OR, OC(0)-R, C(0)-OR, C(0)-R, NRR, NR-C(0)R, C(0)-NRR, N[C(0)R][C(0)R], SR, halogen, CN, SiR ^Siv R ^Siw R ^Six and N0 ₂ , wherein

R ^Siv , R ^Siw , R ^Six are independently from each other selected from the group consisting of H, Ci-2o-alkyl, C2-2o-alkenyl, C2-2o-alkynyl, Cs-6-cycloalkyl, phenyl and 0-Si(CH3)3,

R and R are independently selected from the group consisting of H, Ci-20-alkyl, C2-2o-alkenyl, C2-2o-alkynyl, Cs-s-cycloalkyl, C6-i ₄ -aryl, and 5 to 14 membered heteroaryl, wherein

Ci-2o-alkyl, C2-2o-alkenyl and C2-2o-alkynyl can be substituted with one to five substituents selected from the group consisting of Cs-6-cycloalkyl, C6-io-aryl, 5 to 10 membered heteroaryl, OR ^k , OC(0)-R, C(0)-OR ^k , C(0)-R ^k , NR ^k R, NR ^k -C(0)R, C(O)- NR ^k R, N[C(0)R ^k ][C(0)R], SR ^k , halogen, CN, and N0 ₂ ;

Cs-s-cycloalkyl can be substituted with one to five substituents selected from the group consisting of Ci-10-alkyl, C2-io-alkenyl, C2-io-alkynyl, Cs-6-cycloalkyl, Ce-10-aryl, 5 to 10 membered heteroaryl, OR ^k , OC(0)-R, C(0)-OR ^k , C(0)-R ^k , NR ^k R, NR ^k -C(0)R, C(0)-NR ^k R, N[C(0)R ^k ][C(0)R], SR ^k , halogen, CN, and N0 ₂ ;

C6-i ₄ -aryl and 5 to 14 membered heteroaryl can be substituted with one to five substituents independently selected from the group consisting of Ci-10-alkyl, C2-10- alkenyl, C2-io-alkynyl, Cs-6-cycloalkyl, Ce-10-aryl, 5 to 10 membered heteroaryl, OR ^k , OC(0)-R, C(0)-OR ^k , C(0)-R ^k , NR ^k R, NR ^k -C(0)R, C(0)-NR ^k R, N[C(0)R ^k ][C(0)R], SR ^k , halogen, CN, and N0 ₂ ; wherein R ^k and R ¹ are independently selected from the group consisting of H, Ci-10-alkyl, C2-io-alkenyl and C2-io-alkynyl,

wherein

Ci-io-alkyl, C2-io-alkenyl and C2-io-alkynyl can be substituted with one to five substituents selected from the group consisting of halogen, CN and NO2.

More preferably, L ¹ and L ² are independently from each other and at each occurrence selected from the group consisting of 5 to 20 membered heteroarylene,

an wherein

5 to 20 membered heteroarylene can be substituted with one to six substituents R ³ at each occurrence selected from the group consisting of Ci-30-alkyl, C2-3o-alkenyl, C2-3o-alkynyl, C5-12- cycloalkyl, C ₆ -i ₈ -aryl and 5 to 20 membered heteroaryl, OR ³¹ , OC(0)-R ³¹ , C(0)-OR ³¹ , C(O)- R ³¹ , NR ³¹ R ³² , N R ³¹ -C(0)R ³² , C(0)-NR ³¹ R ³² , SR ³¹ , halogen, CN, SiR ^Siv R ^Siw R ^Six and OH, and wherein

can be substituted with one or two substituents R ⁴ at each occurrence selected from the group consisting of Ci-30-alkyl, C2-3o-alkenyl, C2-3o-alkynyl, Cs-12-cycloalkyl, Ce-18-aryl and 5 to 20 membered heteroaryl, C(0)-R ⁴¹ , C(0)-NR ⁴¹ R ⁴² , C(0)-OR ⁴¹ and CN, wherein

R ³¹ , R ³² , R ⁴¹ und R ⁴² are independently from each other and at each occurrence selected from the group consisting of H, Ci-30-alkyl, C2-3o-alkenyl, C2-3o-alkynyl, Cs-12-cycloalkyl, C6- 18-aryl and 5 to 20 membered heteroaryl, and wherein

Ci-3o-alkyl, C2-3o-alkenyl and C2-3o-alkynyl can be substituted with one to ten substituents independently selected from the group consisting of Cs-s-cycloalkyl, C6-i ₄ -aryl, 5 to 14 membered heteroaryl, OR, OC(0)-R, C(0)-OR, C(0)-R, NRR, NR-C(0)R, C(0)-NRR, N[C(0)R][C(0)R], SR, halogen, CN, SiR ^Siv R ^Siw R ^Six and N0 ₂ ; and at least two CH ₂ -groups, but not adjacent CH2-groups of Ci-30-alkyl, C2-3o-alkenyl and C2-3o-alkynyl can be replaced by O or S,

C5-i2-cycloalkyl can be substituted with one to six substituents independently selected from the group consisting of Ci-20-alkyl, C2-2o-alkenyl and C2-2o-alkynyl, Cs-s-cycloalkyl, Ce-14-aryl, 5 to 14 membered heteroaryl, OR, OC(0)-R, C(0)-OR, C(0)-R, NRR, NR- C(0)R, C(0)-NRR, N[C(0)R][C(0)R], SR, halogen, CN , SiR ^Siv R ^Siw R ^Six and N0 ₂ ; and one or two Ch -groups, but not adjacent Chb-groups, of Cs-12-cycloalkyl can be replaced by O, S, OC(O), CO, N R' or N R-CO,

Ce-18-aryl and 5 to 20 membered heteroaryl can be substituted with one to six substituents independently selected from the group consisting of Ci-20-alkyl, C2-2o-alkenyl, C2-2o-alkynyl,

Cs-s-cycloalkyl, C ₆ -i ₄ -aryl, 5 to 14 membered heteroaryl, OR, OC(0)-R, C(0)-OR, C(0)-R, NRR, N R-C(0)R, C(0)-NRR, N[C(0)R][C(0)R], SR, halogen, CN, SiR ^Siv R ^Siw R ^Six and N0 ₂ , wherein

R ^Siv , R ^Siw , R ^Six are independently from each other selected from the group consisting of H, Ci-2o-alkyl, C2-2o-alkenyl, C2-2o-alkynyl, Cs-6-cycloalkyl, phenyl and 0-Si(CH3)3,

R and R are independently selected from the group consisting of H, Ci-20-alkyl, C2-2o-alkenyl, C2-2o-alkynyl, Cs-s-cycloalkyl, C6-i ₄ -aryl, and 5 to 14 membered heteroaryl, wherein

Ci-2o-alkyl, C2-2o-alkenyl and C2-2o-alkynyl can be substituted with one to five substituents selected from the group consisting of Cs-6-cycloalkyl, Ce-10-aryl, 5 to 10 membered heteroaryl, OR ^k , OC(0)-R, C(0)-OR ^k , C(0)-R ^k , NR ^k R, NR ^k -C(0)R, C(O)- NR ^k R, N[C(0)R ^k ][C(0)R], SR ^k , halogen, CN, and N0 ₂ ;

Cs-s-cycloalkyl can be substituted with one to five substituents selected from the group consisting of Ci-10-alkyl, C2-io-alkenyl, C2-io-alkynyl, Cs-6-cycloalkyl, Ce-10-aryl, 5 to 10 membered heteroaryl, OR ^k , OC(0)-R, C(0)-OR ^k , C(0)-R ^k , NR ^k R, NR ^k -C(0)R, C(0)-NR ^k R, N[C(0)R ^k ][C(0)R], SR ^k , halogen, CN, and N0 ₂ ;

C6-i ₄ -aryl and 5 to 14 membered heteroaryl can be substituted with one to five substituents independently selected from the group consisting of Ci-10-alkyl, C2-10- alkenyl, C2-io-alkynyl, Cs-6-cycloalkyl, Ce-10-aryl, 5 to 10 membered heteroaryl, OR ^k , OC(0)-R, C(0)-OR ^k , C(0)-R ^k , NR ^k R, NR ^k -C(0)R, C(0)-NR ^k R, N[C(0)R ^k ][C(0)R],

SR ^k , halogen, CN, and N0 ₂ ; wherein

R ^k and R are independently selected from the group consisting of H, Ci-10-alkyl, C2-io-alkenyl and C2-io-alkynyl,

wherein

Ci-10-alkyl, C2-io-alkenyl and C2-io-alkynyl can be substituted with one to five substituents selected from the group consisting of halogen, CN and NO2.

Even more preferably, L ¹ and L ² are independently from each other and at each occurrence selected from the group consisting of 5 to 20 membered heteroarylene, 42

wherein

R ¹⁰⁴ and R ¹⁰⁵ are independently and at each occurrence selected from the group consisting of H, Ci-2o-alkyl, C2-2o-alkenyl, C2-2o-alkynyl, Cs-s-cycloalkyl, C6-i4-aryl, and 5 to 14 membered heteroaryl, or R ¹⁰⁴ and R ¹⁰⁵ , if attached to the same atom, together with the atom, to which they are attached, form a 5 to 12 membered ring system,

wherein

Ci-2o-alkyl, C2-2o-alkenyl and C2-2o-alkynyl can be substituted with one to five substituents selected from the group consisting of Cs-6-cycloalkyl, C6-io-aryl, 5 to 10 membered heteroaryl, OR ^u , OC(0)-R ^u , C(0)-OR ^u , C(0)-R ^u , NR ^U R ^V , NR ^u -C(0)R ^v , C(0)-NR ^u R ^v , N[C(0)R ^u ][C(0)R ^v ], SR ^U , halogen, CN, and N0 ₂ ;

Cs-s-cycloalkyl can be substituted with one to five substituents selected from the group consisting of Ci-10-alkyl, C2-io-alkenyl, C2-io-alkynyl, Cs-6-cycloalkyl, Ce-10-aryl, 5 to 10 membered heteroaryl, OR ^u , OC(0)-R ^u , C(0)-OR ^u , C(0)-R ^u , NR ^U R ^V , NR ^u -C(0)R ^v , C(O)- NR ^U R ^V , N[C(0)R ^u ][C(0)R ^v ], SR ^U , halogen, CN, and N0 ₂ ;

Ce-14-aryl and 5 to 14 membered heteroaryl can be substituted with one to five substituents independently selected from the group consisting of Ci-io-alkyl, C2-io-alkenyl, C2-io-alkynyl, Cs-6-cycloalkyl, C6-io-aryl, 5 to 10 membered heteroaryl, OR ^u , OC(0)-R ^u , C(0)-OR ^u , C(0)-R ^u , NR ^U R ^V , NR ^u -C(0)R ^v , C(0)-NR ^u R ^v , N[C(0)R ^u ][C(0)R ^v ], SR ^U , halogen, CN, and N0 ₂ ;

5 to 12 membered ring system can be substituted with one to five substituents selected from the group consisting of Ci-10-alkyl, C2-io-alkenyl, C2-io-alkynyl, Cs-6-cycloalkyl, Ce-ιο- aryl, 5 to 10 membered heteroaryl, OR ^u , OC(0)-R ^u , C(0)-OR ^u , C(0)-R ^u , NR ^U R ^V , NR ^U - C(0)R ^v , C(0)-NR ^u R ^v , N[C(0)R ^u ][C(0)R ^v ], SR ^U , halogen, CN, and N0 ₂ ;

wherein

R ^u and R ^v are independently selected from the group consisting of H, Ci-10-alkyl,

C2-io-alkenyl and C2-io-alkynyl,

wherein

Ci-io-alkyl, C2-io-alkenyl and C2-io-alkynyl can be substituted with one to five substituents selected from the group consisting of halogen, CN and NO2, wherein

5 to 20 membered heteroarylene can be substituted with one to four substituents R ³ at each occurrence selected from the group consisting of Ci-30-alkyl and halogen, and wherein

can be substituted with one or two substituents R ⁴ at each occurrence selected from the group consisting of Ci-30-alkyl, C(0)-R ⁴¹ , C(0)-OR ⁴¹ and CN, wherein

R ⁴¹ is at each occurrence Ci-30-alkyl.

Even even more preferably, L ¹ and L ² are independently from each other and at each occur- rence selected from the group consisting of 5 to 20 membered heteroarylene,

an wherein 5 to 20 membered heteroarylene is selected from the group consisting of

wherein

R ¹⁰⁴ and R ¹⁰⁵ are independently and at each occurrence selected from the group consisting of H and Ci-20-alkyl, wherein

5 to 20 membered heteroarylene can be substituted with one to four substituents R ³ at each occurrence selected from the group consisting of Ci-30-alkyl and halogen, and

is unsubstituted.

Most preferably, L ¹ and L ² are independently from each other and at each occurrence selected from the group consisting of 5 to 20 membered heteroarylene, and wherein 5 to 20 membered heteroaryl wherein

5 to 20 membered heteroarylene is unsubstituted, and wherein is unsubstituted.

In particular, L ¹ and L ² are independently from each other and at each occurrence 5 to 20 membered heteroarylene, wherein 5 to 20 membered heteroarylene is wherein

5 to 20 membered heteroarylene is unsubstituted.

Preferably, L ³ and are L ⁴ are independently from each other and at each occurrence selected from the group consisting of C6-is-arylene and 5 to 20 membered heteroarylene wherein

C6-i8-arylene and 5 to 20 membered heteroarylene can be substituted with one to six substit- uents R ⁹ at each occurrence selected from the group consisting of Ci-30-alkyl, C2-3o-alkenyl, C ₂ -3o-alkynyl, C ₅ -i ₂ -cycloalkyl, C ₆ -is-aryl and 5 to 20 membered heteroaryl, OR ⁹¹ , OC(0)-R ⁹¹ , C(0)-OR ⁹¹ , C(0)-R ⁹¹ , N R ⁹¹ R ⁹² , N R ⁹¹ -C(0)R ⁹² , C(0)-NR ⁹¹ R ⁹² , SR ⁹¹ , halogen, CN, SiR ^Si vR ^Siz R- S ^iaa and OH , and wherein

R ⁹¹ and R ⁹² are independently from each other and at each occurrence selected from the group consisting of H, Ci-30-alkyl, C2-3o-alkenyl, C2-3o-alkynyl, Cs-12-cycloalkyl, Ce-18-aryl and 5 to 20 membered heteroaryl, and wherein

Ci-3o-alkyl, C2-3o-alkenyl and C2-3o-alkynyl can be substituted with one to ten substituents independently selected from the group consisting of Cs-s-cycloalkyl, C6-i4-aryl, 5 to 14 membered heteroaryl, OR ^m , OC(0)-R ^m , C(0)-OR ^m , C(0)-R ^m , NR ^m R ⁿ , NR ^m -C(0)R ⁿ , C(O)-

NR ⁿ R ^m , N[C(0)R ⁿ ][C(0)R ^m ], SR ⁿ , halogen, CN, SiR ^Si vR ^Siz R ^Siaa and N0 ₂ ; and at least two Ch -groups, but not adjacent Ch -groups of Ci-30-alkyl, C2-3o-alkenyl and C2-3o-alkynyl can be replaced by O or S, C5-i2-cycloalkyl can be substituted with one to six substituents independently selected from the group consisting of Ci-20-alkyl, C2-2o-alkenyl, C2-2o-alkynyl, Cs-s-cycloalkyl, Ce-14-aryl, 5 to 14 membered heteroaryl, OR ^m , OC(0)-R ^m , C(0)-OR ^m , C(0)-R ^m , NR ^m R ⁿ , NR ^m -C(0)R ⁿ , C(0)-NR ^m R ⁿ , N[C(0)R ^m ][C(0)R ⁿ ], SR ^m , halogen, CN , SiR ^Si vR ^Siz R ^Siaa and NO2; and one or two Ch -groups, but not adjacent Ch -groups, of Cs-12-cycloalkyl can be replaced by O, S, OC(O), CO, NR ^m or NR ^m -CO,

Ce-18-aryl and 5 to 20 membered heteroaryl can be substituted with one to six substituents independently selected from the group consisting of Ci-20-alkyl, C2-2o-alkenyl, C2-2o-alkynyl, Cs-s-cycloalkyl, C ₆ -i ₄ -aryl, 5 to 14 membered heteroaryl, OR ^m , OC(0)-R ^m , C(0)-OR ^m , C(0)-R ^m , N R ^m R ⁿ , N R ^m -C(0)R ⁿ , C(0)-NR ^m R ⁿ , N[C(0)R ^m ][C(0)R ⁿ ], SR ^m , halogen, CN,

SjRSiyRSizRSiaa _{and N} Q _2i

R ^s ' ^y , R ^Siz , R ^Siaa are independently from each other selected from the group consisting of H, Ci-20-alkyl, C2-2o-alkenyl, C2-2o-alkynyl, Cs-6-cycloalkyl, phenyl and 0-Si(CH3)3, wherein

R ^m and R ⁿ are independently selected from the group consisting of H, Ci-20-alkyl, C2-2o-alkenyl, C2-2o-alkynyl, Cs-s-cycloalkyl, C6-i ₄ -aryl, and 5 to 14 membered heteroaryl, Ci-20-alkyl, C2-2o-alkenyl and C2-2o-alkynyl can be substituted with one to five substituents selected from the group consisting of Cs-6-cycloalkyl, C6-io-aryl, 5 to 10 membered heteroaryl, OR ⁰ , OC(0)-R°, C(0)-OR°, C(0)-R°, N R°RP, N R°-C(0)RP, C(0)-N R°RP, N [C(0)R°][C(0)RP], SR°, halogen, CN, and N0 ₂ ; Cs-s-cycloalkyl can be substituted with one to five substituents selected from the group consisting of Ci-10-alkyl, C2-io-alkenyl, C2-io-alkynyl, Cs-6-cycloalkyl, C6-io-aryl, 5 to 10 membered heteroaryl, OR ⁰ , OC(0)-R°, C(0)-OR°, C(0)-R°, N R°RP, N R°-C(0)RP, C(0)- N R°RP, N [C(0)R°][C(0)RP], SR°, halogen, CN , and N0 ₂ ;

C6-i ₄ -aryl and 5 to 14 membered heteroaryl can be substituted with one to five substituents independently selected from the group consisting of Ci-10-alkyl, C2-io-alkenyl, C2-io-alkynyl, Cs-6-cycloalkyl, C6-io-aryl, 5 to 10 membered heteroaryl, OR ⁰ , OC(0)-R°, C(0)-OR°, C(0)-R°, N R°RP, N R°-C(0)RP, C(0)-N R°RP, N [C(0)R°][C(0)RP], SR°, halogen, CN, and N0 ₂ ; wherein

R° and RP are independently selected from the group consisting of H, Ci-10-alkyl,

C2-io-alkenyl and C2-io-alkynyl,

wherein

Ci-io-alkyl, C2-io-alkenyl and C2-io-alkynyl can be substituted with one to five substituents selected from the group consisting of halogen, CN and NO2.

More preferably, L ³ and are L ⁴ are independently from each other and at each occurrence 5 to 20 membered heteroarylene wherein

5 to 20 membered heteroarylene can be substituted with one to six substituents R ⁹ at each occurrence selected from the group consisting of Ci-30-alkyl, C2-3o-alkenyl, C2-3o-alkynyl, C5-12- cycloalkyl, C ₆ -i ₈ -aryl and 5 to 20 membered heteroaryl, OR ⁹¹ , OC(0)-R ⁹¹ , C(0)-OR ⁹¹ , C(O)- R ⁹¹ , NR ⁹¹ R ⁹² , N R ⁹¹ -C(0)R ⁹² , C(0)-NR ⁹¹ R ⁹² , SR ⁹¹ , halogen, CN , SiR ^Si vR ^Siz R ^Siaa and OH, and wherein

R ⁹¹ and R ⁹² are independently from each other and at each occurrence selected from the group consisting of H, Ci-30-alkyl, C2-3o-alkenyl, C2-3o-alkynyl, Cs-12-cycloalkyl, Ce-18-aryl and 5 to 20 membered heteroaryl, and

Ci-3o-alkyl, C2-3o-alkenyl and C2-3o-alkynyl can be substituted with one to ten substituents independently selected from the group consisting of Cs-s-cycloalkyl, C6-i ₄ -aryl, 5 to 14 membered heteroaryl, OR ^m , OC(0)-R ^m , C(0)-OR ^m , C(0)-R ^m , NR ^m R ⁿ , NR ^m -C(0)R ⁿ , C(O)- NR ⁿ R ^m , N[C(0)R ⁿ ][C(0)R ^m ], SR ⁿ , halogen, CN, SiR ^Si vR ^Siz R ^Siaa and N0 ₂ ; and at least two Ch -groups, but not adjacent Ch -groups of Ci-30-alkyl, C2-3o-alkenyl and C2-3o-alkynyl can be replaced by O or S,

C5-i2-cycloalkyl can be substituted with one to six substituents independently selected from the group consisting of Ci-20-alkyl, C2-2o-alkenyl, C2-2o-alkynyl, Cs-s-cycloalkyl, Ce-14-aryl, 5 to 14 membered heteroaryl, OR ^m , OC(0)-R ^m , C(0)-OR ^m , C(0)-R ^m , NR ^m R ⁿ ,

NR ^m -C(0)R ⁿ , C(0)-NR ^m R ⁿ , N[C(0)R ^m ][C(0)R ⁿ ], SR ^m , halogen, CN , SiR ^Si vR ^Siz R ^Siaa and NO2; and one or two Ch -groups, but not adjacent Ch -groups, of Cs-12-cycloalkyl can be replaced by O, S, OC(O), CO, NR ^m or NR ^m -CO,

C6-i8-aryl and 5 to 20 membered heteroaryl can be substituted with one to six substituents independently selected from the group consisting of Ci-20-alkyl, C2-2o-alkenyl, C2-2o-alkynyl, Cs-s-cycloalkyl, C ₆ -i ₄ -aryl, 5 to 14 membered heteroaryl, OR ^m , OC(0)-R ^m , C(0)-OR ^m , C(0)-R ^m , N R ^m R ⁿ , N R ^m -C(0)R ⁿ , C(0)-NR ^m R ⁿ , N[C(0)R ^m ][C(0)R ⁿ ], SR ^m , halogen, CN,

SjRSiyRSizRSiaa _{and N} Q _2i

R ^s ' ^y , R ^Siz , R ^Siaa are independently from each other selected from the group consisting of H, Ci-2o-alkyl, C2-2o-alkenyl, C2-2o-alkynyl, Cs-6-cycloalkyl, phenyl and 0-Si(CH3)3, wherein

R ^m and R ⁿ are independently selected from the group consisting of H, Ci-20-alkyl, C2-2o-alkenyl, C2-2o-alkynyl, Cs-s-cycloalkyl, C6-i ₄ -aryl, and 5 to 14 membered heteroaryl,

Ci-2o-alkyl, C2-2o-alkenyl and C2-2o-alkynyl can be substituted with one to five substituents selected from the group consisting of Cs-6-cycloalkyl, C6-io-aryl, 5 to 10 membered heteroaryl, OR ⁰ , OC(0)-R°, C(0)-OR°, C(0)-R°, N R°RP, N R°-C(0)RP, C(0)-N R°RP, N [C(0)R°][C(0)RP], SR°, halogen, CN, and N0 ₂ ;

Cs-s-cycloalkyl can be substituted with one to five substituents selected from the group consisting of Ci-10-alkyl, C2-io-alkenyl, C2-io-alkynyl, Cs-6-cycloalkyl, Ce-10-aryl, 5 to 10 membered heteroaryl, OR ⁰ , OC(0)-R°, C(0)-OR°, C(0)-R°, N R°RP, N R°-C(0)RP, C(0)- N R°RP, N [C(0)R°][C(0)RP], SR°, halogen, CN , and N0 ₂ ;

Ce-14-aryl and 5 to 14 membered heteroaryl can be substituted with one to five substituents independently selected from the group consisting of Ci-10-alkyl, C2-io-alkenyl, C2-io-alkynyl, Cs-6-cycloalkyl, Ce-10-aryl, 5 to 10 membered heteroaryl, OR ⁰ , OC(0)-R°, C(0)-OR°, C(0)-R°, N R°RP, N R°-C(0)RP, C(0)-N R°RP, N [C(0)R°][C(0)RP], SR°, halogen, CN, and N0 ₂ ; wherein

R° and RP are independently selected from the group consisting of H, Ci-10-alkyl, C2-io-alkenyl and C2-io-alkynyl,

wherein

Ci-io-alkyl, C2-io-alkenyl and C2-io-alkynyl can be substituted with one to five substituents selected from the group consisting of halogen, CN and NO2.

Even more preferably, L ³ and are L ⁴ are independently from each other and at each occurrence 5 to 20 membered heteroarylene, wherein 5 to 20 membered heteroarylene is selected from the group consisting of

wherein R ¹⁰⁴ and R ¹⁰⁵ are independently and at each occurrence selected from the group consisting of H, Ci-2o-alkyl, C2-2o-alkenyl, C2-2o-alkynyl, Cs-s-cycloalkyl, C6-i4-aryl, and 5 to 14 membered heteroaryl, or R ¹⁰⁴ and R ¹⁰⁵ , if attached to the same atom, together with the atom, to which they are attached, form a 5 to 12 membered ring system,

wherein

Ci-2o-alkyl, C2-2o-alkenyl and C2-2o-alkynyl can be substituted with one to five substituents selected from the group consisting of Cs-6-cycloalkyl, C6-io-aryl, 5 to 10 membered heteroaryl, OR ^u , OC(0)-R ^u , C(0)-OR ^u , C(0)-R ^u , NR ^U R ^V , NR ^u -C(0)R ^v , C(0)-NR ^u R ^v , N[C(0)R ^u ][C(0)R ^v ], SR ^U , halogen, CN, and N0 ₂ ;

Cs-s-cycloalkyl can be substituted with one to five substituents selected from the group consisting of Ci-10-alkyl, C2-io-alkenyl, C2-io-alkynyl, Cs-6-cycloalkyl, C6-io-aryl, 5 to 10 membered heteroaryl, OR ^u , OC(0)-R ^u , C(0)-OR ^u , C(0)-R ^u , NR ^U R ^V , NR ^u -C(0)R ^v , C(O)- NR ^U R ^V , N[C(0)R ^u ][C(0)R ^v ], SR ^U , halogen, CN, and N0 ₂ ;

Ce-14-aryl and 5 to 14 membered heteroaryl can be substituted with one to five substituents independently selected from the group consisting of Ci-io-alkyl, C2-io-alkenyl, C2-io-alkynyl, Cs-6-cycloalkyl, C6-io-aryl, 5 to 10 membered heteroaryl, OR ^u , OC(0)-R ^u , C(0)-OR ^u , C(0)-R ^u , NR ^U R ^V , NR ^u -C(0)R ^v , C(0)-NR ^u R ^v , N[C(0)R ^u ][C(0)R ^v ], SR ^U , halo- gen, CN, and N0 ₂ ;

5 to 12 membered ring system can be substituted with one to five substituents selected from the group consisting of Ci-10-alkyl, C2-io-alkenyl, C2-io-alkynyl, Cs-6-cycloalkyl, Ce-ιο- aryl, 5 to 10 membered heteroaryl, OR ^u , OC(0)-R ^u , C(0)-OR ^u , C(0)-R ^u , NR ^U R ^V , NR ^U - C(0)R ^v , C(0)-NR ^u R ^v , N[C(0)R ^u ][C(0)R ^v ], SR ^U , halogen, CN, and N0 ₂ ;

wherein

R ^u and R ^v are independently selected from the group consisting of H, Ci-10-alkyl,

C2-io-alkenyl and C2-io-alkynyl,

wherein

Ci-io-alkyl, C2-io-alkenyl and C2-io-alkynyl can be substituted with one to five substituents selected from the group consisting of halogen, CN and NO2, wherein

5 to 20 membered heteroarylene can be substituted with one to three substituents R ⁹ at each occurrence selected from the group consisting of Ci-30-alkyl and halogen.

Most preferably, L ³ and L ⁴ are independently from each other and at each occurrence 5 to 20 membered heteroarylene, wherein 5 to 20 membered heteroarylene is selected from the group consisting of

wherein

5 to 20 membered heteroarylene can be substituted with one substituent R ⁹ at each occurrence selected from the group consisting of Ci-30-alkyl and halogen.

In particular, L ³ and L ⁴ are independently from each other and at each occurrence 5 to 20 membered heteroarylene, wherein 5 to 20 membered heteroarylene is

wherein

5 to 20 membered heteroarylene is unsubstituted.

Preferably, A is selected from the group consisting of

A1 A2 A3 A4 wherein

X is at each occurrence O, S or N R ¹ , and

A1 , A2, A3 and A4 can be substituted with one to three substituents R ² . More preferably, A is

A1 A4

wherein

X is at each occurrence S or N R ¹ , and

A1 and A4 can be substituted with one to three substituents R ² .

Most preferably, A is

A4 wherein

A4 is not substituted.

X is at each occurrence O, S or N R ¹ , and

B1 , B2, B3 and B4 can be substituted with one to three substituents R ² .

wherein

X is at each occurrence S or N R ¹ , and

B1 and B4 can be substituted with one to three substituents R ² .

Most preferably, B is

B4 wherein

B4 is not substituted.

Preferably, R ² is at each occurrence selected from the group consisting of Ci-30-alkyl and halogen,

wherein

Ci-3o-alkyl can be substituted with one to ten substituents independently selected from the group consisting of Cs-s-cycloalkyl, C6-i4-aryl, 5 to 14 membered heteroaryl, OR ^e , OC(O)- R ^e , C(0)-OR ^e , C(0)-R ^e , N R ^e R ^f , N R ^e -C(0)R ^f , C(0)-NR ^e R ^f , N[C(0)R ^e ][C(0)R ^f ], SR ^e , halogen, CN, SiR ^Sis R ^Sit R ^Siu and N0 ₂ ; and at least two CH ₂ -groups, but not adjacent CH ₂ - groups, of Ci-30-alkyl can be replaced by O or S, wherein

R ^Sis , R ^Sit and R ^Siu are independently from each other selected from the group consisting of H , Ci-2o-alkyl, C2-2o-alkenyl, C2-2o-alkynyl, Cs-6-cycloalkyl, phenyl and 0-Si(CH3)3, R ^e and R ^f are independently selected from the group consisting of H, Ci-20-alkyl, C2-2o-alkenyl, C2-2o-alkynyl, Cs-s-cycloalkyl, C6-i4-aryl, and 5 to 14 membered heteroaryl, Ci-2o-alkyl, C2-2o-alkenyl and C2-2o-alkynyl can be substituted with one to five substituents selected from the group consisting of Cs-6-cycloalkyl, C6-io-aryl, 5 to 10 membered heteroaryl, ORa, OC(0)-Ro, C(0)-ORo, C(0)-Ro, NRaR ^h , NRa-C(0)R ^h , C(0)-N RaR ^h , N[C(0)R9][C(0)R ^h ], SR9, halogen, CN, and N0 ₂ ; Cs-s-cycloalkyl can be substituted with one to five substituents selected from the group consisting of Ci-10-alkyl, C2-io-alkenyl, C2-io-alkynyl, Cs-6-cycloalkyl, Ce-10-aryl, 5 to 10 membered heteroaryl, ORa, OC(0)-Ra, C(0)-ORo, C(0)-Ro, NRaR ^h , NRa-C(0)R ^h , C(O)- N R9R ^h , N[C(0)R9][C(0)R ^h ], SRa, halogen, CN , and N0 ₂ ; Ce-14-aryl and 5 to 14 membered heteroaryl can be substituted with one to five substituents independently selected from the group consisting of Ci-io-alkyl, C2-io-alkenyl, C2-io-alkynyl, Cs-6-cycloalkyl, Ce-10-aryl, 5 to 10 membered heteroaryl, ORa, OC(0)-R9, C(0)-ORo, C(0)-Ro, N R9R ^h , N Ra-C(0)R ^h , C(0)-N RaR ^h , N[C(0)Ra][C(0)R ^h ], SRa, halogen, CN, and N0 ₂ ; wherein

R9 and R ^h are independently selected from the group consisting of H, Ci-io-alkyl, C2-io-alkenyl and C2-io-alkynyl,

wherein

Ci-io-alkyl, C2-io-alkenyl and C2-io-alkynyl can be substituted with one to five substituents selected from the group consisting of halogen, CN and NO2.

More preferably, R ² is at each occurrence selected from the group consisting of unsubstituted Ci-30-alkyl and halogen.

In preferred polymers comprising at least one unit of formula

or of formula

b and c are independently from each other 1 , 2, 3, 4, 5 or 6,

a and d are independently from each other 0, 1 , 2, 3 or 4,

n and m are independently from each other 0, 1 , 2, 3 or 4,

R ¹ is at each occurrence selected from the group consisting of H , Ci-100-alkyl, C2-ioo-alkenyl, C2- 100-alkynyl, C5-i2-cycloalkyl, C6-is-aryl, and a 5 to 20 membered heteroaryl,

wherein

Ci-100-alkyl, C2-ioo-alkenyl and C2-ioo-alkynyl can be substituted with one to fourty substituents independently selected from the group consisting of Cs-s-cycloalkyl, C6-i4-aryl, 5 to 14 membered heteroaryl, OR ^a , OC(0)-R ^a , C(0)-OR ^a , C(0)-R ^a , NR ^a -C(0)R ^b , C(0)-NR ^a R ^b , SR ^a , Si(R ^Sia )(R ^Sib )(R ^Sic ), -0-Si(R ^Sia )(R ^Sib )(R ^Sic ), halogen and CN; and at least two CH ₂ - groups, but not adjacent Ch -groups, of Ci-100-alkyl, C2-ioo-alkenyl and C2-ioo-alkynyl can be replaced by O or S,

C5-i2-cycloalkyl can be substituted with one to six substituents independently selected from the group consisting of Ci-60-alkyl, C2-6o-alkenyl, C2-6o-alkynyl, Cs-s-cycloalkyl,

Ce-14-aryl, 5 to 14 membered heteroaryl, OR ^a , OC(0)-R ^a , C(0)-OR ^a , C(0)-R ^a , NR ^a -C(0)R ^b , C(0)-NR ^a R ^b , SR ^a , Si(R ^Sia )(R ^Sib )(R ^Sic ), -0-Si(R ^Sia )(R ^Sib )(R ^Sic ), halogen, and CN; and one or two Ch -groups, but not adjacent Chb-groups, of Cs-12-cycloalkyl can be replaced by O, S, OC(O), CO, N R ^a or N R ^a -CO,

C6-i8-aryl and 5 to 20 membered heteroaryl can be substituted with one to six substituents independently selected from the group consisting of Ci-60-alkyl, C2-6o-alkenyl, C2-6o-alkynyl, Cs-s-cycloalkyl, C ₆ -i ₄ -aryl, 5 to 14 membered heteroaryl, OR ^a , OC(0)-R ^a , C(0)-OR ^a , C(O)- R ^a , N R ^a -C(0)R ^b , C(0)-NR ^a R ^b , SR ^a , Si(R ^Sia )(R ^Sib )(R ^Sic ), -0-Si(R ^Sia )(R ^Sib )(R ^Sic ), halogen, and CN, wherein

R ^a and R ^b are independently selected from the group consisting of H, Ci-6o-alkyl, C2-6o-alkenyl, C2-6o-alkynyl, Cs-s-cycloalkyl, C6-i ₄ -aryl and 5 to 14 membered heteroaryl,

R ^Sia , R ^Sib and R ^Sic are independently selected from the group consisting of H,

Ci-6o-alkyl, C2-6o-alkenyl, C2-6o-alkynyl, Cs-s-cycloalkyl, C6-i ₄ -aryl, 5 to 14 membered heteroaryl, 0-Ci-6o-alkyl, 0-C ₂ - ₆ o-alkenyl, 0-C ₂ - ₆ o-alkynyl, 0-C ₅ - ₈ -cycloalkyl, -[0-SiR ^Sid R ^Sie ] ₀ - R ^Sif ,

wherein

o is an integer from 1 to 50,

R ^Sid , R ^Sie and R ^Sif are independently selected from the group consisting of H, C1-60- alkyl, C ₂ -6o-alkenyl, C ₂ -6o-alkynyl, C ₅ - ₈ -cycloalkyl, C ₆ -i ₄ -aryl, -[0-SiR ^Si 9R ^Sih ] _p -R ^Sii , wherein

p is an integer from 1 to 50,

Rag pah _anc | RSii _are independently selected from the group consisting of H , C1-30- alkyl, C ₂ -3o-alkenyl, C ₂ - ₃ o-alkynyl, Cs-e-cycloalkyl, C ₆ -io-aryl, 0-Si(CH ₃ )3,

R ⁵ , R ⁶ , R ⁵⁰ , R ⁶⁰ , R ⁵⁰⁰ and R ⁶⁰⁰ are independently selected from the group consisting of H , Ci-6o-alkyl, C2-6o-alkenyl, C2-6o-alkynyl, Cs-s-cycloalkyl, C6-i ₄ -aryl, and 5 to 14 membered heteroaryl,

Ci-6o-alkyl, C2-6o-alkenyl and C2-6o-alkynyl can be substituted with one to twenty sub- stituents selected from the group consisting of Cs-6-cycloalkyl, Ce-10-aryl, OR ^c , OC(0)-R ^c , C(0)-OR ^c , C(0)-R ^c , NR ^c -C(0)R ^d , C(0)-NR ^c R ^d , SR ^C , Si(R ^Si (R ^Sik )(R ^Sil ), -O-Si(R ^Si (R ^Sik )(R ^Sil ), halogen, and CN; and at least two CH ₂ -groups, but not adjacent Ch -groups, of Ci-60-alkyl, C2-6o-alkenyl and C2-6o-alkynyl can be replaced by O or S,

Cs-s-cycloalkyl can be substituted with one to five substituents selected from the group consisting of Ci-30-alkyl, C2-3o-alkenyl, C2-3o-alkynyl, Cs-6-cycloalkyl, Ce-10-aryl, OR ^c , OC(0)-R ^c , C(0)-OR ^c , C(0)-R ^c , NR ^c -C(0)R ^d , C(0)-NR ^c R ^d , SR ^C ,

Si(R ^Si (R ^Sik )(R ^Sil ), -O-Si(R ^Si (R ^Sik )(R ^Sil ), halogen, and CN; and one or two CH ₂ - groups, but not adjacent Chb-groups, of Cs-s-cycloalkyl can be replaced by O, S, OC(O), CO, N R ^c or N R ^c -CO,

C6-i ₄ -aryl and 5 to 14 membered heteroaryl can be substituted with one to five substituents independently selected from the group consisting of Ci-30-alkyl, C2-30- alkenyl, C ₂ - ₃ o-alkynyl, C ₅ - ₆ -cycloalkyl, C ₆ -io-aryl, OR ^c , OC(0)-R ^c , C(0)-OR ^c , C(0)-R ^c , NR ^c -C(0)R ^d , C(0)-NR ^c R ^d , SR ^C , Si(R ^Si (R ^Sik )(R ^Sil ), -O-Si(R ^Si (R ^Sik )(R ^Sil ), halogen and CN; wherein

R ^c and R ^d are independently selected from the group consisting of H, Ci-30-alkyl, C2-3o-alkenyl and C2-3o-alkynyl,

R ^s ' ^j , R ^Sik and R ^Sil are independently selected from the group consisting of H, Ci-30-alkyl, C ₂ -3o-alkenyl, C ₂ - ₃ o-alkynyl, C ₅ - ₆ -cycloalkyl, C ₆ -io-aryl, -[0-SiR ^Sim R ^Sin ] _q - R ^Si0 ,

wherein

q is an integer from 1 to 50,

R ^Sim , R ^Sin , R ^Si0 are independently selected from the group consisting of H , Ci- 3o-alkyl, C2-3o-alkenyl, C2-3o-alkynyl, Cs-6-cycloalkyl, Ce-10-aryl, 5 to 10 membered heteroaryl, O-Ci-30-alkyl, 0-C2-3o-alkenyl, 0-C2-3o-alkynyl, O-C5-6- cycloalkyl, 0-C ₆ -io-aryl, 0-5 to 10 membered heteroaryl, -[0-SiR ^Si PR ^Sk i]rR ^Sir , NR ⁷⁰ R ⁸⁰ , halogen, and 0-C(0)-R ⁷⁰ ;

wherein

r is an integer from 1 to 50,

R ^S 'P, R ^Sic i, R ^Sir are independently selected from the group consisting of H, Ci-3o-alkyl, C2-3o-alkenyl, C2-3o-alkynyl, Cs-6-cycloalkyl, Ce-10-aryl, 5 to 10 membered heteroaryl, O-Ci-30-alkyl, 0-C2-3o-alkenyl, 0-C2-3o-alkynyl, O- C5-6-cycloalkyl, 0-C6-io-aryl, 0-5 to 10 membered heteroaryl, 0-Si(CH3)3, NR ⁷⁰⁰ R ⁸⁰⁰ , halogen and 0-C(0)-R ⁷⁰⁰ ,

R ⁷ , R ⁸ , R ⁷⁰ , R ⁸⁰ , R ⁷⁰⁰ and R ⁸⁰⁰ are independently selected from the group consisting of H , Ci-3o-alkyl, C2-3o-alkenyl, C2-3o-alkynyl, Cs-6-cycloalkyl, Ce-10-aryl, and 5 to 10 membered heteroaryl,

Ci-3o-alkyl, C2-3o-alkenyl and C2-3o-alkynyl can be substituted with one to ten sub- stituents selected from the group consisting of halogen and CN ,

L ¹ and L ² are independently from each other and at each occurrence selected from the group consisting of C6-ie-arylene, 5 to 20 membered heteroarylene,

an

wherein

Ce-18-arylene and 5 to 20 membered heteroarylene can be substituted with one to six substit- uents R ³ at each occurrence selected from the group consisting of Ci-30-alkyl, C2-3o-alkenyl, C2-3o-alkynyl, Cs-12-cycloalkyl, C6-ie-aryl and 5 to 20 membered heteroaryl, OR ³¹ , OC(0)-R ³¹ , C(0)-OR ³¹ , C(0)-R ³¹ , N R ³¹ R ³² , N R ¹ -C(0)R ³² , C(0)-NR ¹ R ³² , SR ³¹ , halogen, CN , SiR- sivRSiwRSix and OH, and wherein

can be substituted with one or two substituents R ⁴ at each occurrence selected from the group consisting of Ci-30-alkyl, C2-3o-alkenyl, C2-3o-alkynyl, Cs-12-cycloalkyl, Ce-18-aryl and 5 to 20 membered heteroaryl, C(0)-R ⁴¹ , C(0)-NR ⁴¹ R ⁴² , C(0)-OR ⁴¹ and CN, wherein

R ³¹ , R ³² , R ⁴¹ und R ⁴² are independently from each other and at each occurrence selected from the group consisting of H, Ci-30-alkyl, C2-3o-alkenyl, C2-3o-alkynyl, Cs-12-cycloalkyl, C6- 18-aryl and 5 to 20 membered heteroaryl, and wherein

Ci-3o-alkyl, C2-3o-alkenyl and C2-3o-alkynyl can be substituted with one to ten substituents independently selected from the group consisting of Cs-s-cycloalkyl, C6-i ₄ -aryl, 5 to 14 membered heteroaryl, OR, OC(0)-R, C(0)-OR, C(0)-R, NRR, NR-C(0)R, C(0)-NRR, N[C(0)R][C(0)R], SR, halogen, CN, SiR ^Siv R ^Siw R ^Six and N0 ₂ ; and at least two CH ₂ -groups, but not adjacent Ch -groups of Ci-30-alkyl, C2-3o-alkenyl and C2-3o-alkynyl can be replaced by O or S,

C5-i2-cycloalkyl can be substituted with one to six substituents independently selected from the group consisting of Ci-20-alkyl, C2-2o-alkenyl and C2-2o-alkynyl, Cs-s-cycloalkyl, Ce-14-aryl, 5 to 14 membered heteroaryl, OR, OC(0)-R, C(0)-OR, C(0)-R, NRR, NR- C(0)R, C(0)-NRR, N[C(0)R][C(0)R], SR, halogen, CN , SiR ^Siv R ^Siw R ^Six and N0 ₂ ; and one or two Ch -groups, but not adjacent Chb-groups, of Cs-12-cycloalkyl can be replaced by O, S, OC(O), CO, N R or N R-CO,

Ce-18-aryl and 5 to 20 membered heteroaryl can be substituted with one to six substituents independently selected from the group consisting of Ci-20-alkyl, C2-2o-alkenyl, C2-2o-alkynyl,

Cs-s-cycloalkyl, C ₆ -i ₄ -aryl, 5 to 14 membered heteroaryl, OR, OC(0)-R, C(0)-OR, C(0)-R, NRR, N R-C(0)R, C(0)-NRR, N[C(0)R][C(0)R], SR, halogen, CN, SiR ^Siv R ^Siw R ^Six and N0 ₂ , wherein

R ^Siv , R ^Siw , R ^Six are independently from each other selected from the group consisting of H, Ci-2o-alkyl, C2-2o-alkenyl, C2-2o-alkynyl, Cs-6-cycloalkyl, phenyl and 0-Si(CH3)3,

R and R are independently selected from the group consisting of H, Ci-20-alkyl, C2-2o-alkenyl, C2-2o-alkynyl, Cs-s-cycloalkyl, C6-i ₄ -aryl, and 5 to 14 membered heteroaryl, wherein Ci-2o-alkyl, C2-2o-alkenyl and C2-2o-alkynyl can be substituted with one to five substit- uents selected from the group consisting of Cs-6-cycloalkyl, C6-io-aryl, 5 to 10 mem- bered heteroaryl, OR ^k , OC(0)-R', C(0)-OR ^k , C(0)-R ^k , NR ^k R, NR ^k -C(0)R, C(O)- NR ^k R, N[C(0)R ^k ][C(0)R], SR ^k , halogen, CN, and N0 ₂ ;

C5-8-cycloalkyl can be substituted with one to five substituents selected from the group consisting of Ci-10-alkyl, C2-io-alkenyl, C2-io-alkynyl, Cs-6-cycloalkyl, Ce-10-aryl, 5 to 10 membered heteroaryl, OR ^k , OC(0)-R, C(0)-OR ^k , C(0)-R ^k , NR ^k R, NR ^k -C(0)R, C(0)-NR ^k R, N[C(0)R ^k ][C(0)R], SR ^k , halogen, CN, and N0 ₂ ;

Ce-14-aryl and 5 to 14 membered heteroaryl can be substituted with one to five substituents independently selected from the group consisting of Ci-10-alkyl, C2-10- alkenyl, C2-io-alkynyl, Cs-6-cycloalkyl, Ce-10-aryl, 5 to 10 membered heteroaryl, OR ^k , OC(0)-R, C(0)-OR ^k , C(0)-R ^k , NR ^k R, NR ^k -C(0)R, C(0)-NR ^k R, N[C(0)R ^k ][C(0)R], SR ^k , halogen, CN, and N0 ₂ ; wherein

R ^k and R are independently selected from the group consisting of H, Ci-10-alkyl,

C2-io-alkenyl and C2-io-alkynyl,

wherein

Ci-10-alkyl, C2-io-alkenyl and C2-io-alkynyl can be substituted with one to five substituents selected from the group consisting of halogen, CN and NO2,

L ³ and are L ⁴ are independently from each other and at each occurrence selected from the group consisting of Ce-18-arylene and 5 to 20 membered heteroarylene wherein

Ce-18-arylene and 5 to 20 membered heteroarylene can be substituted with one to six substituents R ⁹ at each occurrence selected from the group consisting of Ci-30-alkyl, C2-3o-alkenyl, C ₂ -3o-alkynyl, C ₅ -i ₂ -cycloalkyl, C ₆ -i ₈ -aryl and 5 to 20 membered heteroaryl, OR ⁹¹ , OC(0)-R ⁹¹ , C(0)-OR ⁹¹ , C(0)-R ⁹¹ , N R ⁹¹ R ⁹² , N R ⁹¹ -C(0)R ⁹² , C(0)-NR ⁹¹ R ⁹² , SR ⁹¹ , halogen, CN, SiR ^Si vR ^Siz R- S ^iaa and OH , and wherein

R ⁹¹ and R ⁹² are independently from each other and at each occurrence selected from the group consisting of H, Ci-30-alkyl, C2-3o-alkenyl, C2-3o-alkynyl, Cs-12-cycloalkyl, Ce-18-aryl and 5 to 20 membered heteroaryl, and wherein

Ci-3o-alkyl, C2-3o-alkenyl and C2-3o-alkynyl can be substituted with one to ten substituents independently selected from the group consisting of Cs-8-cycloalkyl, Ce-14-aryl, 5 to 14 membered heteroaryl, OR ^m , OC(0)-R ^m , C(0)-OR ^m , C(0)-R ^m , NR ^m R ⁿ , NR ^m -C(0)R ⁿ , C(O)- NR ⁿ R ^m , N[C(0)R ⁿ ][C(0)R ^m ], SR ⁿ , halogen, CN, SiR ^Si vR ^Siz R ^Siaa and N0 ₂ ; and at least two Ch -groups, but not adjacent Ch -groups of Ci-30-alkyl, C2-3o-alkenyl and C2-3o-alkynyl can be replaced by O or S, C5-i2-cycloalkyl can be substituted with one to six substituents independently selected from the group consisting of Ci-20-alkyl, C2-2o-alkenyl, C2-2o-alkynyl, Cs-s-cycloalkyl, Ce-14-aryl, 5 to 14 membered heteroaryl, OR ^m , OC(0)-R ^m , C(0)-OR ^m , C(0)-R ^m , NR ^m R ⁿ , NR ^m -C(0)R ⁿ , C(0)-NR ^m R ⁿ , N[C(0)R ^m ][C(0)R ⁿ ], SR ^m , halogen, CN , SiR ^Si vR ^Siz R ^Siaa and NO2; and one or two Ch -groups, but not adjacent Ch -groups, of Cs-12-cycloalkyl can be replaced by O, S, OC(O), CO, NR ^m or NR ^m -CO,

Ce-18-aryl and 5 to 20 membered heteroaryl can be substituted with one to six substituents independently selected from the group consisting of Ci-20-alkyl, C2-2o-alkenyl, C2-2o-alkynyl, Cs-s-cycloalkyl, C ₆ -i ₄ -aryl, 5 to 14 membered heteroaryl, OR ^m , OC(0)-R ^m , C(0)-OR ^m , C(0)-R ^m , N R ^m R ⁿ , N R ^m -C(0)R ⁿ , C(0)-NR ^m R ⁿ , N[C(0)R ^m ][C(0)R ⁿ ], SR ^m , halogen, CN,

SjRSiyRSizRSiaa _{and N} Q _2i

R ^s ' ^y , R ^Siz , R ^Siaa are independently from each other selected from the group consisting of H, Ci-20-alkyl, C2-2o-alkenyl, C2-2o-alkynyl, Cs-6-cycloalkyl, phenyl and 0-Si(CH3)3, wherein

R ^m and R ⁿ are independently selected from the group consisting of H, Ci-20-alkyl, C2-2o-alkenyl, C2-2o-alkynyl, Cs-s-cycloalkyl, C6-i ₄ -aryl, and 5 to 14 membered heteroaryl, Ci-20-alkyl, C2-2o-alkenyl and C2-2o-alkynyl can be substituted with one to five substituents selected from the group consisting of Cs-6-cycloalkyl, C6-io-aryl, 5 to 10 membered heteroaryl, OR ⁰ , OC(0)-R°, C(0)-OR°, C(0)-R°, N R°RP, N R°-C(0)RP, C(0)-N R°RP, N [C(0)R°][C(0)RP], SR°, halogen, CN, and N0 ₂ ; Cs-s-cycloalkyl can be substituted with one to five substituents selected from the group consisting of Ci-10-alkyl, C2-io-alkenyl, C2-io-alkynyl, Cs-6-cycloalkyl, Ce-10-aryl, 5 to 10 membered heteroaryl, OR ⁰ , OC(0)-R°, C(0)-OR°, C(0)-R°, N R°RP, N R°-C(0)RP, C(0)- N R°RP, N [C(0)R°][C(0)RP], SR°, halogen, CN , and N0 ₂ ; C6-i ₄ -aryl and 5 to 14 membered heteroaryl can be substituted with one to five substituents independently selected from the group consisting of Ci-10-alkyl, C2-io-alkenyl, C2-io-alkynyl, Cs-6-cycloalkyl, Ce-10-aryl, 5 to 10 membered heteroaryl, OR ⁰ , OC(0)-R°, C(0)-OR°, C(0)-R°, N R°RP, N R°-C(0)RP, C(0)-N R°RP, N [C(0)R°][C(0)RP], SR°, halogen, CN, and N0 ₂ ; wherein R° and RP are independently selected from the group consisting of H , Ci-10-alkyl, C2-io-alkenyl and C2-io-alkynyl,

wherein

Ci-io-alkyl, C2-io-alkenyl and C2-io-alkynyl can be substituted with one to five sub- stituents selected from the group consisting of halogen, CN and NO2,

B is selected from the group consisting of

B5 B6 B7 wherein

X is at each occurrence O, S or N R ¹ ,

A1 , A2, A3, A4, A5, A6, A7, B1 , B2, B3, B4, B5, B6 or B7 can be substituted with one to three substituents R ² ,

R ² is at each occurrence selected from the group consisting of Ci-30-alkyl, C2-3o-alkenyl, C2- 3o-alkynyl, Cs-12-cycloalkyl, Ce-18-aryl, 5 to 20 membered heteroaryl, OR ²¹ , OC(0)-R ²¹ , C(0)-OR ²¹ , C(0)-R ²¹ , N R ²¹ R ²² , N R ²¹ -C(0)R ²² , C(0)-NR ²¹ R ²² , N[C(0)R ²¹ ][C(0)R ²² ], SR ²¹ , halogen, CN, SiR ^Sis R ^Sit R ^Siu and OH,

wherein

R ²¹ and R ²² and are independently selected from the group consisting of H, Ci-30-alkyl, C2-3o-alkenyl, C2-3o-alkynyl, Cs-i2-cycloalkyl, Ce-18-aryl and 5 to 20 membered heteroaryl, and

Ci-3o-alkyl, C2-3o-alkenyl and C2-3o-alkynyl can be substituted with one to ten substituents independently selected from the group consisting of Cs-s-cycloalkyl, C6-i4-aryl, 5 to 14 membered heteroaryl, OR ^e , OC(0)-R ^e , C(0)-OR ^e , C(0)-R ^e , NR ^e R ^f , NR ^e -C(0)R ^f , C(0)-NR ^e R ^f , N[C(0)R ^e ][C(0)Rl, SR ^e , halogen, CN, SiR ^Sis R ^Sit R ^Siu and N0 ₂ ; and at least two Ch -groups, but not adjacent Chb-groups, of Ci-30-alkyl, C2-3o-alkenyl and C2-30- alkynyl can be replaced by O or S,

C5-i2-cycloalkyl can be substituted with one to six substituents independently selected from the group consisting of Ci-20-alkyl, C2-2o-alkenyl and C2-2o-alkynyl, Cs-s-cycloalkyl, Ce-14-aryl, 5 to 14 membered heteroaryl, OR ^e , OC(0)-R ^e , C(0)-OR ^e , C(0)-R ^e , NR ^e R ^f , NR ^e -C(0)R ^f , C(0)-NR ^e R ^f , N[C(0)R ^e ][C(0)R ^f ], SR ^e , halogen, CN, SiR ^Sis R ^Sit R ^Siu and N0 ₂ ; and one or two Ch -groups, but not adjacent Ch -groups, of Cs-12-cycloalkyl can be replaced by O, S, OC(O), CO, NR ^e or NR ^e -CO,

C6-i8-aryl and 5 to 20 membered heteroaryl can be substituted with one to six substituents independently selected from the group consisting of Ci-20-alkyl, C2-2o-alkenyl, C2-20- alkynyl, C ₅ - ₈ -cycloalkyl, C ₆ -i ₄ -aryl, 5 to 14 membered heteroaryl, OR ^e , OC(0)-R ^e , C(O)-

OR ^e , C(0)-R ^e , N R ^e R ^f , N R ^e -C(0)R ^f , C(0)-NR ^e R ^f , N[C(0)R ^e ][C(0)R ^f ], SR ^e , halogen, CN, SiRSis _R sit _R siu _{and N} o _2i

R ^Sis , R ^Sit and R ^Siu are independently from each other selected from the group consisting of H , Ci-20-alkyl, C2-2o-alkenyl, C2-2o-alkynyl, Cs-6-cycloalkyl, phenyl and 0-Si(CH3)3, wherein R ^e and R ^f are independently selected from the group consisting of H , Ci-20-alkyl, C2-2o-alkenyl, C2-2o-alkynyl, Cs-s-cycloalkyl, C6-i4-aryl, and 5 to 14 membered heteroaryl,

Ci-2o-alkyl, C2-2o-alkenyl and C2-2o-alkynyl can be substituted with one to five substituents selected from the group consisting of Cs-6-cycloalkyl, C6-io-aryl, 5 to 10 membered heteroaryl, ORa, OC(0)-Ra, C(0)-ORo, C(0)-Ro, N RaR ^h , N Ra-C(0)R ^h , C(O)- N R9R ^h , N[C(0)R9][C(0)R ^h ], SRa, halogen, CN , and N0 ₂ ;

Cs-s-cycloalkyl can be substituted with one to five substituents selected from the group consisting of Ci-10-alkyl, C2-io-alkenyl, C2-io-alkynyl, Cs-6-cycloalkyl, Ce-10-aryl, 5 to 10 membered heteroaryl, ORa, OC(0)-Ro, C(0)-ORa, C(0)-Ro, N RaR ^h , N Ra- C(0)R ^h , C(0)-N R9R ^h , N[C(0)R9][C(0)R ^h ], SRa, halogen, CN , and N0 ₂ ;

Ce-14-aryl and 5 to 14 membered heteroaryl can be substituted with one to five substituents independently selected from the group consisting of Ci-10-alkyl, C2-10- alkenyl, C2-io-alkynyl, Cs-6-cycloalkyl, C6-io-aryl, 5 to 10 membered heteroaryl, ORa, OC(0)-Ro, C(0)-ORo, C(0)-Ro, N RaR ^h , N Ra-C(0)R ^h , C(0)-N RaR ^h ,

N[C(0)R9][C(0)R ^h ], SR9, halogen, CN , and N0 ₂ ; wherein

R9 and R ^h are independently selected from the group consisting of H , Ci-io-alkyl, C2-io-alkenyl and C2-io-alkynyl,

wherein

Ci-io-alkyl, C2-io-alkenyl and C2-io-alkynyl can be substituted with one to five substituents selected from the group consisting of halogen, CN and NO2.

In more preferred polymers comprising at least one unit of formula

or of formula b and c are independently from each other 1 , 2, 3, 4, 5 or 6,

a and d are independently from each other 0, 1 , 2 or 3,

n and m are independently from each other 0, 1 , 2, 3 or 4,

R ¹ is at each occurrence selected from the group consisting of Ci-100-alkyl, C2-ioo-alkenyl and C2- 100-alkynyl,

wherein

Ci-100-alkyl, C2-ioo-alkenyl and C2-ioo-alkynyl can be substituted with one to fourty substitu- ents independently selected from the group consisting of Cs-s-cycloalkyl, C6-i4-aryl, 5 to 14 membered heteroaryl, OR ^a , OC(0)-R ^a , C(0)-OR ^a , C(0)-R ^a , NR ^a -C(0)R ^b , C(0)-NR ^a R ^b , SR ^a , Si(R ^Sia )(R ^Sib )(R ^Sic ), -0-Si(R ^Sia )(R ^Sib )(R ^Sic ), halogen, and CN ; and at least two CH ₂ - groups, but not adjacent Ch -groups, of Ci-100-alkyl, C2-ioo-alkenyl and C2-ioo-alkynyl can be replaced by O or S, wherein

R ^a and R ^b are independently selected from the group consisting of H, Ci-60-alkyl,

C2-6o-alkenyl, C2-6o-alkynyl, Cs-s-cycloalkyl, C6-i4-aryl and 5 to 14 membered heteroaryl,

R ^Sia , R ^Sib and R ^Sic are independently selected from the group consisting of H,

Ci-6o-alkyl, C ₂ -6o-alkenyl, C ₂ -6o-alkynyl, C ₅ - ₈ -cycloalkyl, C ₆ -i ₄ -aryl, -[0-SiR ^Sid R ^Sie ] ₀ -R ^Sif , wherein

o is an integer from 1 to 50,

R ^Sid , R ^Sie and R ^Sif are independently selected from the group consisting of H, C1-60- alkyl, C ₂ -6o-alkenyl, C ₂ -6o-alkynyl, C ₅ - ₈ -cycloalkyl, C ₆ -i ₄ -aryl, -[0-SiR ^Si 9R ^Sih ] _p -R ^Sii , wherein

p is an integer from 1 to 50,

Rag RSii _are independently selected from the group consisting of H, C1-30- alkyl, C ₂ -3o-alkenyl, C ₂ - ₃ o-alkynyl, Cs-e-cycloalkyl, C ₆ -io-aryl, 0-Si(CH ₃ )3, R ⁵ , R ⁶ , R ⁵⁰ , R ⁶⁰ , R ⁵⁰⁰ and R ⁶⁰⁰ are independently selected from the group consisting of H , Ci-6o-alkyl, C2-6o-alkenyl, C2-6o-alkynyl, Cs-s-cycloalkyl, C6-i4-aryl, and 5 to 14 membered heteroaryl, Ci-6o-alkyl, C2-6o-alkenyl and C2-6o-alkynyl can be substituted with one to twenty substituents selected from the group consisting of Cs-6-cycloalkyl, C6-io-aryl, OR ^c , OC(0)-R ^c , C(0)-OR ^c , C(0)-R ^c , NR ^c -C(0)R ^d , C(0)-NR ^c R ^d , SR ^C , Si(R ^Si (R ^Sik )(R ^Sil ), -O-Si(R ^Si (R ^Sik )(R ^Sil ), halogen, and CN; and at least two CH ₂ -groups, but not adjacent Ch -groups, of Ci-6o-alkyl, C2-6o-alkenyl and C2-6o-alkynyl can be replaced by O or S,

Cs-s-cycloalkyl can be substituted with one to five substituents selected from the group consisting of Ci-30-alkyl, C2-3o-alkenyl, C2-3o-alkynyl, Cs-6-cycloalkyl, Ce-10-aryl, OR ^c , OC(0)-R ^c , C(0)-OR ^c , C(0)-R ^c , NR ^c -C(0)R ^d , C(0)-NR ^c R ^d , SR ^C ,

Si(R ^Si (R ^Sik )(R ^Sil ), -O-Si(R ^Si (R ^Sik )(R ^Sil ), halogen, and CN ; and one or two CH ₂ - groups, but not adjacent Chb-groups, of Cs-s-cycloalkyl can be replaced by O, S, OC(O), CO, N R ^c or N R ^c -CO,

C6-i4-aryl and 5 to 14 membered heteroaryl can be substituted with one to five sub- stituents independently selected from the group consisting of Ci-30-alkyl, C2-30- alkenyl, C ₂ - ₃ o-alkynyl, C ₅ - ₆ -cycloalkyl, C ₆ -io-aryl, OR ^c , OC(0)-R ^c , C(0)-OR ^c , C(0)-R ^c , NR ^c -C(0)R ^d , C(0)-NR ^c R ^d , SR ^C , Si(R ^Si (R ^Sik )(R ^Sil ), -O-Si(R ^Si (R ^Sik )(R ^Sil ), halogen, and CN; wherein

R ^c and R ^d are independently selected from the group consisting of H, Ci-30-alkyl, C2-3o-alkenyl and C2-3o-alkynyl,

R ^s 'j, R ^Sik and R ^Sil are independently selected from the group consisting of H, Ci-3o-alkyl, C ₂ -3o-alkenyl, C ₂ -3o-alkynyl, C ₅ -6-cycloalkyl, C ₆ -io-aryl, -[0-SiR ^Sim R ^Sin ] _q -

R ^Si0 ,

wherein

q is an integer from 1 to 50, R ^Sim , R ^Sin , R ^Si0 are independently selected from the group consisting of H , Ci-

3o-alkyl, C ₂ - ₃ o-alkenyl, C ₂ - ₃ o-alkynyl, C ₅ - ₆ -cycloalkyl, C ₆ -io-aryl, -[0-SiR ^SI PR ^Sic i]r R ^Sir ,

wherein

r is an integer from 1 to 50,

R ^S 'P, R ^Sic i, R ^Sir are independently selected from the group consisting of H,

Ci-3o-alkyl, C ₂ - ₃ o-alkenyl, C ₂ -3o-alkynyl, C ₅ -6-cycloalkyl, C ₆ -io-aryl, O- Si(CH ₃ ) ₃ , R ⁷ , R ⁸ , R ⁷⁰ , R ⁸⁰ , R ⁷⁰⁰ and R ⁸⁰⁰ are independently selected from the group consisting of H, Ci-3o-alkyl, C2-3o-alkenyl, C2-3o-alkynyl, Cs-6-cycloalkyl, C6-io-aryl, and 5 to 10 membered heteroaryl,

Ci-3o-alkyl, C2-3o-alkenyl and C2-3o-alkynyl can be substituted with one to ten substituents selected from the group consisting of halogen and CN ,

L ¹ and L ² are independently from each other and at each occurrence selected from the group consisting of 5 to 20 membered heteroarylene,

an wherein

5 to 20 membered heteroarylene can be substituted with one to six substituents R ³ at each occurrence selected from the group consisting of Ci-30-alkyl, C2-3o-alkenyl, C2-3o-alkynyl, C5-12- cycloalkyl, C ₆ -i ₈ -aryl and 5 to 20 membered heteroaryl, OR ³¹ , OC(0)-R ³¹ , C(0)-OR ³¹ , C(O)- R ³¹ , NR ³¹ R ³² , N R ³¹ -C(0)R ³² , C(0)-NR ³¹ R ³² , SR ³¹ , halogen, CN, SiR ^Siv R ^Siw R ^Six and OH, and wherein

can be substituted with one or two substituents R ⁴ at each occurrence selected from the group consisting of Ci-30-alkyl, C2-3o-alkenyl, C2-3o-alkynyl, Cs-12-cycloalkyl, Ce-18-aryl and 5 to 20 membered heteroaryl, C(0)-R ⁴¹ , C(0)-NR ⁴¹ R ⁴² , C(0)-OR ⁴¹ and CN, wherein

R ³¹ , R ³² , R ⁴¹ und R ⁴² are independently from each other and at each occurrence selected from the group consisting of H, Ci-30-alkyl, C2-3o-alkenyl, C2-3o-alkynyl, Cs-12-cycloalkyl, C6- 18-aryl and 5 to 20 membered heteroaryl, and wherein

Ci-3o-alkyl, C2-3o-alkenyl and C2-3o-alkynyl can be substituted with one to ten substituents independently selected from the group consisting of Cs-s-cycloalkyl, C6-i ₄ -aryl, 5 to 14 membered heteroaryl, OR, OC(0)-R, C(0)-OR, C(0)-R, NRR, NR-C(0)R, C(0)-NRR, N[C(0)R][C(0)R], SR, halogen, CN, SiR ^Siv R ^Siw R ^Six and N0 ₂ ; and at least two CH ₂ -groups, but not adjacent CH2-groups of Ci-30-alkyl, C2-3o-alkenyl and C2-3o-alkynyl can be replaced by O or S,

C5-i2-cycloalkyl can be substituted with one to six substituents independently selected from the group consisting of Ci-20-alkyl, C2-2o-alkenyl and C2-2o-alkynyl, Cs-s-cycloalkyl,

Ce-14-aryl, 5 to 14 membered heteroaryl, OR, OC(0)-R, C(0)-OR, C(0)-R, NRR, NR- C(0)R, C(0)-NRR, N[C(0)R][C(0)R], SR', halogen, CN , SiR ^Siv R ^Siw R ^Six and N0 ₂ ; and one or two Ch -groups, but not adjacent Chb-groups, of Cs-12-cycloalkyl can be replaced by O, S, OC(O), CO, N R or N R-CO, Ce-18-aryl and 5 to 20 membered heteroaryl can be substituted with one to six substituents independently selected from the group consisting of Ci-20-alkyl, C2-2o-alkenyl, C2-2o-alkynyl, Cs-s-cycloalkyl, C ₆ -i ₄ -aryl, 5 to 14 membered heteroaryl, OR, OC(0)-R, C(0)-OR, C(0)-R, NRR, N R-C(0)R, C(0)-NRR, N[C(0)R][C(0)R], SR, halogen, CN, SiR ^Siv R ^Siw R ^Six and N0 ₂ , wherein

R ^Siv , R ^Siw , R ^Six are independently from each other selected from the group consisting of H, Ci-2o-alkyl, C2-2o-alkenyl, C2-2o-alkynyl, Cs-6-cycloalkyl, phenyl and 0-Si(CH3)3, R and R are independently selected from the group consisting of H, Ci-20-alkyl,

C2-2o-alkenyl, C2-2o-alkynyl, Cs-s-cycloalkyl, Ce-14-aryl, and 5 to 14 membered heteroaryl, wherein

Ci-2o-alkyl, C2-2o-alkenyl and C2-2o-alkynyl can be substituted with one to five substituents selected from the group consisting of Cs-6-cycloalkyl, Ce-10-aryl, 5 to 10 mem- bered heteroaryl, OR ^k , OC(0)-R, C(0)-OR ^k , C(0)-R ^k , NR ^k R, NR ^k -C(0)R, C(O)-

NR ^k R, N[C(0)R ^k ][C(0)R], SR ^k , halogen, CN, and N0 ₂ ;

Cs-s-cycloalkyl can be substituted with one to five substituents selected from the group consisting of Ci-10-alkyl, C2-io-alkenyl, C2-io-alkynyl, Cs-6-cycloalkyl, Ce-10-aryl, 5 to 10 membered heteroaryl, OR ^k , OC(0)-R, C(0)-OR ^k , C(0)-R ^k , N R ^k R, N R ^k -C(0)R, C(0)-N R ^k R, N [C(0)R ^k ][C(0)R], SR ^k , halogen, CN , and N0 ₂ ;

Ce-14-aryl and 5 to 14 membered heteroaryl can be substituted with one to five substituents independently selected from the group consisting of Ci-10-alkyl, C2-10- alkenyl, C2-io-alkynyl, Cs-6-cycloalkyl, Ce-10-aryl, 5 to 10 membered heteroaryl, OR ^k , OC(0)-R, C(0)-OR ^k , C(0)-R ^k , N R ^k R, N R ^k -C(0)R, C(0)-N R ^k R, N [C(0)R ^k ][C(0)R], SR ^k , halogen, CN , and N0 ₂ ; wherein

R ^k and R are independently selected from the group consisting of H , Ci-10-alkyl, C2-io-alkenyl and C2-io-alkynyl,

wherein

Ci-10-alkyl, C2-io-alkenyl and C2-io-alkynyl can be substituted with one to five substituents selected from the group consisting of halogen, CN and NO2,

L ³ and are L ⁴ are independently from each other and at each occurrence 5 to 20 membered het- eroarylene wherein

5 to 20 membered heteroarylene can be substituted with one to six substituents R ⁹ at each occurrence selected from the group consisting of Ci-30-alkyl, C2-3o-alkenyl, C2-3o-alkynyl, C5-12- cycloalkyl, C ₆ -i ₈ -aryl and 5 to 20 membered heteroaryl, OR ⁹¹ , OC(0)-R ⁹¹ , C(0)-OR ⁹¹ , C(O)- R ⁹¹ , NR ⁹¹ R ⁹² , N R ⁹¹ -C(0)R ⁹² , C(0)-NR ⁹¹ R ⁹² , SR ⁹¹ , halogen, CN , SiR ^Si vR ^Siz R ^Siaa and OH, and wherein

R ⁹¹ and R ⁹² are independently from each other and at each occurrence selected from the group consisting of H, Ci-30-alkyl, C2-3o-alkenyl, C2-3o-alkynyl, Cs-12-cycloalkyl, Ce-18-aryl and

5 to 20 membered heteroaryl, and

Ci-3o-alkyl, C2-3o-alkenyl and C2-3o-alkynyl can be substituted with one to ten substituents independently selected from the group consisting of Cs-s-cycloalkyl, C6-i4-aryl, 5 to 14 membered heteroaryl, OR ^m , OC(0)-R ^m , C(0)-OR ^m , C(0)-R ^m , NR ^m R ⁿ , NR ^m -C(0)R ⁿ , C(O)-

NR ⁿ R ^m , N[C(0)R ⁿ ][C(0)R ^m ], SR ⁿ , halogen, CN, SiR ^Si vR ^Siz R ^Siaa and N0 ₂ ; and at least two Ch -groups, but not adjacent Ch -groups of Ci-30-alkyl, C2-3o-alkenyl and C2-3o-alkynyl can be replaced by O or S, C5-i2-cycloalkyl can be substituted with one to six substituents independently selected from the group consisting of Ci-20-alkyl, C2-2o-alkenyl, C2-2o-alkynyl, Cs-s-cycloalkyl, Ce-14-aryl, 5 to 14 membered heteroaryl, OR ^m , OC(0)-R ^m , C(0)-OR ^m , C(0)-R ^m , NR ^m R ⁿ , NR ^m -C(0)R ⁿ , C(0)-NR ^m R ⁿ , N[C(0)R ^m ][C(0)R ⁿ ], SR ^m , halogen, CN , SiR ^Si vR ^Siz R ^Siaa and NO2; and one or two Ch -groups, but not adjacent Ch -groups, of Cs-12-cycloalkyl can be replaced by O, S, OC(O), CO, NR ^m or NR ^m -CO,

C6-i8-aryl and 5 to 20 membered heteroaryl can be substituted with one to six substituents independently selected from the group consisting of Ci-20-alkyl, C2-2o-alkenyl, C2-2o-alkynyl, Cs-s-cycloalkyl, C ₆ -i ₄ -aryl, 5 to 14 membered heteroaryl, OR ^m , OC(0)-R ^m , C(0)-OR ^m , C(0)-R ^m , N R ^m R ⁿ , N R ^m -C(0)R ⁿ , C(0)-NR ^m R ⁿ , N[C(0)R ^m ][C(0)R ⁿ ], SR ^m , halogen, CN,

SjRSiyRSizRSiaa _{and N} Q _2i

R ^s ' ^y , R ^Siz , R ^Siaa are independently from each other selected from the group consisting of H, Ci-20-alkyl, C2-2o-alkenyl, C2-2o-alkynyl, Cs-6-cycloalkyl, phenyl and 0-Si(CH3)3, wherein

R ^m and R ⁿ are independently selected from the group consisting of H, Ci-20-alkyl, C2-2o-alkenyl, C2-2o-alkynyl, Cs-s-cycloalkyl, C6-i ₄ -aryl, and 5 to 14 membered heteroaryl, Ci-20-alkyl, C2-2o-alkenyl and C2-2o-alkynyl can be substituted with one to five substituents selected from the group consisting of Cs-6-cycloalkyl, C6-io-aryl, 5 to 10 membered heteroaryl, OR ⁰ , OC(0)-R°, C(0)-OR°, C(0)-R°, N R°RP, N R°-C(0)RP, C(0)-N R°RP, N [C(0)R°][C(0)RP], SR°, halogen, CN , and N0 ₂ ;

C5-8-cycloalkyl can be substituted with one to five substituents selected from the group consisting of Ci-10-alkyl, C2-io-alkenyl, C2-io-alkynyl, Cs-6-cycloalkyl, C6-io-aryl, 5 to 10 membered heteroaryl, OR ⁰ , OC(0)-R°, C(0)-OR°, C(0)-R°, N R°RP, N R°-C(0)RP, C(0)- N R°RP, N [C(0)R°][C(0)RP], SR°, halogen, CN, and N0 ₂ ;

Ce-14-aryl and 5 to 14 membered heteroaryl can be substituted with one to five substituents independently selected from the group consisting of Ci-10-alkyl, C2-io-alkenyl, C2-io-alkynyl, Cs-6-cycloalkyl, Ce-10-aryl, 5 to 10 membered heteroaryl, OR ⁰ , OC(0)-R°, C(0)-OR°, C(0)-R°, N R°RP, N R°-C(0)RP, C(0)-N R°RP, N [C(0)R°][C(0)RP], SR°, halogen, CN, and N0 ₂ ; wherein

R° and RP are independently selected from the group consisting of H , Ci-10-alkyl, C2-io-alkenyl and C2-io-alkynyl,

wherein

Ci-io-alkyl, C2-io-alkenyl and C2-io-alkynyl can be substituted with one to five substituents selected from the group consisting of halogen, CN and NO2,

A is selected from the group consisting of

A1 A2 A3 A4

A5 A6 A7 and B is selected from the group consisting of

B5 B6 B7 wherein

X is at each occurrence O, S or N R ¹ ,

A1 , A2, A3, A4, A5, A6, A7, B1 , B2, B3, B4, B5, B6 or B7 can be substituted with one to three substituents R ² ,

R ² is at each occurrence selected from the group consisting of Ci-30-alkyl, C2-3o-alkenyl, Cj 3o-alkynyl, Cs-12-cycloalkyl, Ce-18-aryl, 5 to 20 membered heteroaryl, OR ²¹ , OC(0)-R ²¹ , C(0)-OR ²¹ , C(0)-R ²¹ , N R ²¹ R ²² , NR ²¹ -C(0)R ²² , C(0)-NR ²¹ R ²² , N[C(0)R ²¹ ][C(0)R ²² ], SR ²¹ , halogen, CN, SiR ^Sis R ^Sit R ^Siu and OH,

wherein

R ²¹ and R ²² and are independently selected from the group consisting of H, Ci-30-alkyl, C2-3o-alkenyl, C2-3o-alkynyl, Cs-i2-cycloalkyl, Ce-18-aryl and 5 to 20 membered heteroaryl, and

Ci-3o-alkyl, C2-3o-alkenyl and C2-3o-alkynyl can be substituted with one to ten substituents independently selected from the group consisting of Cs-s-cycloalkyl, C6-i4-aryl, 5 to 14 membered heteroaryl, OR ^e , OC(0)-R ^e , C(0)-OR ^e , C(0)-R ^e , NR ^e R ^f , NR ^e -C(0)R ^f , C(0)-NR ^e R ^f , N[C(0)R ^e ][C(0)Rl, SR ^e , halogen, CN, SiR ^Sis R ^Sit R ^Siu and N0 ₂ ; and at least two Ch -groups, but not adjacent Chb-groups, of Ci-30-alkyl, C2-3o-alkenyl and C2-30- alkynyl can be replaced by O or S,

C5-i2-cycloalkyl can be substituted with one to six substituents independently selected from the group consisting of Ci-20-alkyl, C2-2o-alkenyl and C2-2o-alkynyl, Cs-s-cycloalkyl, Ce-14-aryl, 5 to 14 membered heteroaryl, OR ^e , OC(0)-R ^e , C(0)-OR ^e , C(0)-R ^e , NR ^e R ^f , NR ^e -C(0)R ^f , C(0)-NR ^e R ^f , N[C(0)R ^e ][C(0)R ^f ], SR ^e , halogen, CN, SiR ^Sis R ^Sit R ^Siu and N0 ₂ and one or two Ch -groups, but not adjacent Ch -groups, of Cs-12-cycloalkyl can be replaced by O, S, OC(O), CO, NR ^e or NR ^e -CO,

Ce-18-aryl and 5 to 20 membered heteroaryl can be substituted with one to six substitu- ents independently selected from the group consisting of Ci-20-alkyl, C2-2o-alkenyl, C2-20- alkynyl, C ₅ - ₈ -cycloalkyl, C ₆ -i ₄ -aryl, 5 to 14 membered heteroaryl, OR ^e , OC(0)-R ^e , C(O)-

OR ^e , C(0)-R ^e , N R ^e R ^f , N R ^e -C(0)R ^f , C(0)-NR ^e R ^f , N[C(0)R ^e ][C(0)R ^f ], SR ^e , halogen, CN, Sj RSisRSitRSiu _{and N} o _2i R ^Sis , R ^Sit and R ^Siu are independently from each other selected from the group consisting of H , Ci-20-alkyl, C2-2o-alkenyl, C2-2o-alkynyl, Cs-6-cycloalkyl, phenyl and 0-Si(CH3)3, wherein

R ^e and R ^f are independently selected from the group consisting of H, Ci-20-alkyl, C2-2o-alkenyl, C2-2o-alkynyl, Cs-8-cycloalkyl, Ce-14-aryl, and 5 to 14 membered heteroaryl,

Ci-20-alkyl, C2-2o-alkenyl and C2-2o-alkynyl can be substituted with one to five substit- uents selected from the group consisting of Cs-6-cycloalkyl, C6-io-aryl, 5 to 10 mem- bered heteroaryl, ORa, OC(0)-Ra, C(0)-ORa, C(0)-Ra, NRaR ^h , NRa-C(0)R ^h , C(O)-

N R9R ^h , N[C(0)R9][C(0)R ^h ], SRa, halogen, CN , and N0 ₂ ;

C5-8-cycloalkyl can be substituted with one to five substituents selected from the group consisting of Ci-10-alkyl, C2-io-alkenyl, C2-io-alkynyl, Cs-6-cycloalkyl, Ce-10-aryl, 5 to 10 membered heteroaryl, ORa, OC(0)-Ra, C(0)-ORa, C(0)-Ra, NRaR ^h , NRa-

C(0)R ^h , C(0)-N R9R ^h , N[C(0)R9][C(0)R ^h ], SRa, halogen, CN, and N0 ₂ ;

Ce-14-aryl and 5 to 14 membered heteroaryl can be substituted with one to five substituents independently selected from the group consisting of Ci-10-alkyl, C2-10- alkenyl, C2-io-alkynyl, Cs-6-cycloalkyl, Ce-10-aryl, 5 to 10 membered heteroaryl, ORa,

OC(0)-R9, C(0)-OR9, C(0)-R9, NRaR ^h , NRa-C(0)R ^h , C(0)-NRaR ^h ,

N[C(0)R9][C(0)R ^h ], SR9, halogen, CN , and N0 ₂ ; wherein

R9 and R ^h are independently selected from the group consisting of H, Ci-10-alkyl,

C2-io-alkenyl and C2-io-alkynyl,

wherein

Ci-10-alkyl, C2-io-alkenyl and C2-io-alkynyl can be substituted with one to five substituents selected from the group consisting of halogen, CN and NO2. In the even more preferred polymers comprising at least one unit of formula

or of formula

b and c are independently from each other 1 , 2, 3 or 4,

a and d are independently from each other 0, 1 or 2,

n and m are independently from each other 0, 1 or 2,

R ¹ is at each occurrence selected from the group consisting of Ci-50-alkyl, C2-so-alkenyl and C2- 5o-alkynyl, wherein

Ci-5o-alkyl, C2-so-alkenyl and C2-so-alkynyl can be substituted with one to twenty substitu- ents independently selected from the group consisting of Cs-6-cycloalkyl, C6-io-aryl, 5 to 10 membered heteroaryl, OR ^a , SR ^a , Si(R ^Sia )(R ^Sib )(R ^Sic ), -0-Si(R ^Sia )(R ^Sib )(R ^Sic ), halogen, and CN; and at least two Ch -groups, but not adjacent Ch -groups, of Ci-50-alkyl, C2-so-alkenyl and C2-5o-alkynyl can be replaced by O or S, wherein

R ^a and R ^b are independently selected from the group consisting of H , Ci-30-alkyl,

C2-3o-alkenyl, C2-3o-alkynyl, Cs-6-cycloalkyl and C6-io-aryl, R ^Sia , R ^Sib and R ^Sic are independently selected from the group consisting of H, Ci-30-alkyl, C ₂ - ₃₀ -alkenyl, C ₂ - ₃₀ -alkynyl, C ₅ - ₆ -cycloalkyl, C ₆ -io-aryl, -[0-SiR ^Sid R ^Sie ] ₀ -R ^Sif ,

wherein

o is an integer from 1 to 50,

R ^Sid , R ^Sie , R ^Sif are independently selected from the group consisting of H, Ci-30-alkyl, C ₂ - ₃₀ -alkenyl, C ₂ - ₃₀ -alkynyl, C ₅ - ₆ -cycloalkyl, C ₆ -io-aryl, -[0-SiR ^Si 9R ^Sih ] _p -R ^Sii ,

wherein

p is an integer from 1 to 50,

Rag RSii _are independently selected from the group consisting of H, Ci-30-alkyl, C ₂ -3o-alkenyl, C ₂ - ₃ o-alkynyl, C ₅ -6-cycloalkyl, C ₆ -io-aryl, 0-Si(CH ₃ )3,

R ⁵ , R ⁶ , R ⁵⁰ , R ⁶⁰ , R ⁵⁰⁰ and R ⁶⁰⁰ are independently selected from the group consisting of H, Ci-3o-alkyl, C ₂ -3o-alkenyl, C ₂ -3o-alkynyl, Cs-6-cycloalkyl, Ce-10-aryl, and 5 to 10 membered heteroaryl,

Ci-3o-alkyl, C ₂ -3o-alkenyl and C ₂ -3o-alkynyl can be substituted with one to ten substituents selected from the group consisting of halogen and CN,

L ¹ and L ² are independently from each other and at each occurrence selected from the group consisting of 5 to 20 membered heteroarylene,

and wherein 5 to 20 membered heteroarylene is selected from the group consisting of

wherein R ¹⁰⁴ and R ¹⁰⁵ are independently and at each occurrence selected from the group consisting of H, Ci-2o-alkyl, C2-2o-alkenyl, C2-2o-alkynyl, Cs-s-cycloalkyl, C6-i4-aryl, and 5 to 14 membered heteroaryl, or R ¹⁰⁴ and R ¹⁰⁵ , if attached to the same atom, together with the atom, to which they are attached, form a 5 to 12 membered ring system,

wherein

Ci-2o-alkyl, C2-2o-alkenyl and C2-2o-alkynyl can be substituted with one to five substituents selected from the group consisting of Cs-6-cycloalkyl, C6-io-aryl, 5 to 10 membered heteroaryl, OR ^u , OC(0)-R ^u , C(0)-OR ^u , C(0)-R ^u , NR ^U R ^V , NR ^u -C(0)R ^v , C(0)-NR ^u R ^v , N[C(0)R ^u ][C(0)R ^v ], SR ^U , halogen, CN, and N0 ₂ ;

Cs-s-cycloalkyl can be substituted with one to five substituents selected from the group consisting of Ci-10-alkyl, C2-io-alkenyl, C2-io-alkynyl, Cs-6-cycloalkyl, Ce-10-aryl, 5 to 10 membered heteroaryl, OR ^u , OC(0)-R ^u , C(0)-OR ^u , C(0)-R ^u , NR ^U R ^V , NR ^u -C(0)R ^v , C(O)- NR ^U R ^V , N[C(0)R ^u ][C(0)R ^v ], SR ^U , halogen, CN, and N0 ₂ ;

Ce-14-aryl and 5 to 14 membered heteroaryl can be substituted with one to five substituents independently selected from the group consisting of Ci-io-alkyl, C2-io-alkenyl, C2-io-alkynyl, Cs-6-cycloalkyl, C6-io-aryl, 5 to 10 membered heteroaryl, OR ^u , OC(0)-R ^u , C(0)-OR ^u , C(0)-R ^u , NR ^U R ^V , NR ^u -C(0)R ^v , C(0)-NR ^u R ^v , N[C(0)R ^u ][C(0)R ^v ], SR ^U , halogen, CN, and N0 ₂ ;

5 to 12 membered ring system can be substituted with one to five substituents selected from the group consisting of Ci-10-alkyl, C2-io-alkenyl, C2-io-alkynyl, Cs-6-cycloalkyl, Ce-ιο- aryl, 5 to 10 membered heteroaryl, OR ^u , OC(0)-R ^u , C(0)-OR ^u , C(0)-R ^u , NR ^U R ^V , NR ^U - C(0)R ^v , C(0)-NR ^u R ^v , N[C(0)R ^u ][C(0)R ^v ], SR ^U , halogen, CN, and N0 ₂ ;

wherein

R ^u and R ^v are independently selected from the group consisting of H, Ci-10-alkyl,

C2-io-alkenyl and C2-io-alkynyl,

wherein

Ci-io-alkyl, C2-io-alkenyl and C2-io-alkynyl can be substituted with one to five substituents selected from the group consisting of halogen, CN and NO2, wherein

5 to 20 membered heteroarylene can be substituted with one to four substituents R ³ at each occurrence selected from the group consisting of Ci-30-alkyl and halogen, and wherein

can be substituted with one or two substituents R ⁴ at each occurrence selected from the group consisting of Ci-30-alkyl, C(0)-R ⁴¹ , C(0)-OR ⁴¹ and CN, wherein

R ⁴¹ is at each occurrence Ci-30-alkyl,

L ³ and are L ⁴ are independently from each other and at each occurrence 5 to 20 membered heteroarylene, wherein 5 to 20 membered heteroarylene is selected from the group consisting of

wherein

R ¹⁰⁴ and R ¹⁰⁵ are independently and at each occurrence selected from the group consisting of H, Ci-2o-alkyl, C2-2o-alkenyl, C2-2o-alkynyl, Cs-s-cycloalkyl, C6-i4-aryl, and 5 to 14 membered heteroaryl, or R ¹⁰⁴ and R ¹⁰⁵ , if attached to the same atom, together with the atom, to which they are attached, form a 5 to 12 membered ring system,

wherein

Ci-2o-alkyl, C2-2o-alkenyl and C2-2o-alkynyl can be substituted with one to five substituents selected from the group consisting of Cs-6-cycloalkyl, C6-io-aryl, 5 to 10 membered heteroaryl, OR ^u , OC(0)-R ^u , C(0)-OR ^u , C(0)-R ^u , NR ^U R ^V , NR ^u -C(0)R ^v , C(0)-NR ^u R ^v , N[C(0)R ^u ][C(0)R ^v ], SR ^U , halogen, CN, and N0 ₂ ;

Cs-s-cycloalkyl can be substituted with one to five substituents selected from the group consisting of Ci-10-alkyl, C2-io-alkenyl, C2-io-alkynyl, Cs-6-cycloalkyl, Ce-10-aryl, 5 to 10 membered heteroaryl, OR ^u , OC(0)-R ^u , C(0)-OR ^u , C(0)-R ^u , NR ^U R ^V , NR ^u -C(0)R ^v , C(O)- NR ^U R ^V , N[C(0)R ^u ][C(0)R ^v ], SR ^U , halogen, CN, and N0 ₂ ;

Ce-14-aryl and 5 to 14 membered heteroaryl can be substituted with one to five substituents independently selected from the group consisting of Ci-io-alkyl, C2-io-alkenyl, C2-io-alkynyl, Cs-6-cycloalkyl, C6-io-aryl, 5 to 10 membered heteroaryl, OR ^u , OC(0)-R ^u , C(0)-OR ^u , C(0)-R ^u , NR ^U R ^V , NR ^u -C(0)R ^v , C(0)-NR ^u R ^v , N[C(0)R ^u ][C(0)R ^v ], SR ^U , halogen, CN, and N0 ₂ ;

5 to 12 membered ring system can be substituted with one to five substituents selected from the group consisting of Ci-10-alkyl, C2-io-alkenyl, C2-io-alkynyl, Cs-6-cycloalkyl, Ce-ιο- aryl, 5 to 10 membered heteroaryl, OR ^u , OC(0)-R ^u , C(0)-OR ^u , C(0)-R ^u , NR ^U R ^V , NR ^U - C(0)R ^v , C(0)-NR ^u R ^v , N[C(0)R ^u ][C(0)R ^v ], SR ^U , halogen, CN, and N0 ₂ ;

wherein

R ^u and R ^v are independently selected from the group consisting of H, Ci-10-alkyl,

C2-io-alkenyl and C2-io-alkynyl,

wherein

Ci-io-alkyl, C2-io-alkenyl and C2-io-alkynyl can be substituted with one to five substituents selected from the group consisting of halogen, CN and NO2, wherein

5 to 20 membered heteroarylene can be substituted with one to three substituents R ⁹ at each occurrence selected from the group consisting of Ci-30-alkyl and halogen,

A is selected from the group consisting of

A1 A2 A3 A4 wherein

X is at each occurrence O, S or N R ¹ , and

A1 , A2, A3 and A4 can be substituted with one to three substituents R ² , B is selected from the group consisting of

B1 B2 B3 B4

wherein

X is at each occurrence O, S or N R ¹ , and

B1 , B2, B3 and B4 can be substituted with one to three substituents R ² , wherein

R ² is at each occurrence selected from the group consisting of Ci-30-alkyl and halogen, wherein

Ci-3o-alkyl can be substituted with one to ten substituents independently selected from the group consisting of Cs-s-cycloalkyl, C6-i4-aryl, 5 to 14 membered heteroaryl, OR ^e , OC(O)- R ^e , C(0)-OR ^e , C(0)-R ^e , N R ^e R ^f , N R ^e -C(0)R ^f , C(0)-NR ^e R ^f , N[C(0)R ^e ][C(0)R ^f ], SR ^e , halogen, CN, SiR ^Sis R ^Sit R ^Siu and N0 ₂ ; and at least two CH ₂ -groups, but not adjacent CH ₂ - groups, of Ci-30-alkyl can be replaced by O or S, wherein

R ^Sis , R ^Sit and R ^Siu are independently from each other selected from the group consisting of H , Ci-2o-alkyl, C2-2o-alkenyl, C2-2o-alkynyl, Cs-6-cycloalkyl, phenyl and 0-Si(CH3)3,

R ^e and R ^f are independently selected from the group consisting of H , Ci-20-alkyl, C2-2o-alkenyl, C2-2o-alkynyl, Cs-s-cycloalkyl, C6-i4-aryl, and 5 to 14 membered heteroaryl,

Ci-2o-alkyl, C2-2o-alkenyl and C2-2o-alkynyl can be substituted with one to five substituents selected from the group consisting of Cs-6-cycloalkyl, C6-io-aryl, 5 to 10 membered heteroaryl, ORa, OC(0)-Ro, C(0)-ORo, C(0)-Ro, NRaR ^h , NRa-C(0)R ^h , C(0)-NRaR ^h ,

N[C(0)R9][C(0)R ^h ], SR9, halogen, CN , and N0 ₂ ;

Cs-s-cycloalkyl can be substituted with one to five substituents selected from the group consisting of Ci-10-alkyl, C2-io-alkenyl, C2-io-alkynyl, Cs-6-cycloalkyl, Ce-10-aryl, 5 to 10 membered heteroaryl, ORa, OC(0)-Ra, C(0)-ORo, C(0)-Ro, NRaR ^h , NRa-C(0)R ^h , C(O)-

NR9R ^h , N[C(0)R9][C(0)R ^h ], SRa, halogen, CN, and N0 ₂ ;

Ce-14-aryl and 5 to 14 membered heteroaryl can be substituted with one to five substituents independently selected from the group consisting of Ci-io-alkyl, C2-io-alkenyl, C ₂ -io-alkynyl, Cs-e-cycloalkyl, C ₆ -io-aryl, 5 to 10 membered heteroaryl, ORa, OC(0)-Ra,

C(0)-ORo, C(0)-Ro, NR9R ^h , NRa-C(0)R ^h , C(0)-NRaR ^h , N[C(0)Ra][C(0)R ^h ], SRa, halogen, CN, and N0 ₂ ; wherein

R9 and R ^h are independently selected from the group consisting of H, Ci-io-alkyl,

C2-io-alkenyl and C2-io-alkynyl,

wherein

Ci-io-alkyl, C2-io-alkenyl and C2-io-alkynyl can be substituted with one to five substituents selected from the group consisting of halogen, CN and NO2.

In the even even more preferred polymers comprising at least one unit of formula

or of formula

b and c are independently from each other 1 , 2 or 3,

a and d are independently from each other 0 or 1 ,

n is 0 or 1 ,

m is 0, 1 or 2, R ¹ is at each occurrence selected from the group consisting of Ci-36-alkyl, C2-36-alkenyl and C2- 36-alkynyl,

wherein

Ci-36-alkyl, C2-36-alkenyl and C2-36-alkynyl can be substituted with one to twenty substitu- ents independently selected from the group consisting of Cs-6-cycloalkyl, C6-io-aryl, 5 to 10 membered heteroaryl, OR ^a , SR ^a , Si(R ^Sia )(R ^Sib )(R ^Sic ), -0-Si(R ^Sia )(R ^Sib )(R ^Sic ), halogen, and

CN; and at least two Ch -groups, but not adjacent Ch -groups, of Ci-36-alkyl, C2-36-alkenyl and C2-36-alkynyl can be replaced by O or S, wherein

R ^a and R ^b are independently selected from the group consisting of H , Ci

C2-2o-alkenyl, C2-2o-alkynyl, Cs-6-cycloalkyl and C6-io-aryl

R ^Sia , R ^Sib and R ^Sic are independently selected from the group consisting of H,

Ci-20-alkyl, C ₂ - ₂ o-alkenyl, C ₂ - ₂ o-alkynyl, C ₅ -6-cycloalkyl, C ₆ -io-aryl, -[0-SiR ^Sid R ^Sie ] ₀ - wherein o is an integer from 1 to 50,

R ^Sid , R ^Sie , R ^Sif are independently selected from the group consisting of H, Ci C ₂ -2o-alkenyl, C ₂ - ₂ o-alkynyl, C ₅ - ₆ -cycloalkyl, C ₆ -io-aryl, -[0-SiR ^Si 9R ^Sih ] _p -R ^Sii , wherein

p is an integer from 1 to 50, Rag RSii _are independently selected from the group consisting of H, C1-30- alkyl, C2-2o-alkenyl, C2-2o-alkynyl, Cs-6-cycloalkyl, Ce-10-aryl, 0-Si(CH3)3,

R ⁵ , R ⁶ , R ⁵⁰ , R ⁶⁰ , R ⁵⁰⁰ and R ⁶⁰⁰ are independently selected from the group consisting of H, Ci-20-alkyl, C2-2o-alkenyl, C2-2o-alkynyl, Cs-6-cycloalkyl, Ce-10-aryl, and 5 to 10 membered heteroaryl,

Ci-20-alkyl, C2-2o-alkenyl and C2-2o-alkynyl can be substituted with one to ten substitu- ents selected from the group consisting of halogen and CN,

L ¹ and L ² are independently from each other and at each occurrence selected from the group consisting of 5 to 20 membered heteroarylene, and wherein 5 to 20 membered heteroarylene is selected from the group consisting of

wherein

R ¹⁰⁴ and R ¹⁰⁵ are independently and at each occurrence selected from the group consisting of H and Ci-20-alkyl, wherein

5 to 20 membered heteroarylene can be substituted with one to four substituents R ³ at each occurrence selected from the group consisting of Ci-30-alkyl and halogen, and

is unsubstituted,

L ³ and L ⁴ are independently from each other and at each occurrence 5 to 20 membered heteroarylene, wherein 5 to 20 membered heteroarylene is selected from the group consisting of

wherein

5 to 20 membered heteroarylene can be substituted with one substituent R ⁹ at each rence selected from the group consisting of Ci-30-alkyl and halogen, A is

A1 A4

wherein

X is at each occurrence S or NR ¹ , and

A1 and A4 can be substituted with one to three substituents R ² , B is

B1 B4

wherein

X is at each occurrence S or NR ¹ , and

B1 and B4 can be substituted with one to three substituents R ² , wherein

R ² is at each occurrence selected from the group consisting of unsubstituted Ci-30-alkyl and halogen.

In the most preferred polymers comprising at least one unit of formula

or of formula

b and c are independently from each other 1 , 2 or 3,

a and d are 0,

n is 0,

m is 0, 1 or 2,

R ¹ is at each occurrence unsubstituted Ci-36-alkyl,

L ² is at each occurrence selected from the group consisting of 5 to 20 membered heteroarylene,

an wherein 5 to 20 membered heteroaryl wherein

5 to 20 membered heteroarylene is unsubstituted, and wherein

is unsubstituted,

L ³ and L ⁴ are independently from each other and at each occurrence 5 to 20 membered heteroarylene, wherein 5 to 20 membered heteroaryl

wherein

5 to 20 membered heteroarylene is unsubstituted.

A is

A4 wherein

A4 is not substituted,

wherein

B4 is not substituted.

The polymers comprising at least one unit of formula (1 ) are preferred to the polymers comprising at least one unit of formula (5). The particuar preferred polymers comprising a unit of formula (1 ) are the polymers comprising at least a unit of formulae

(1a)

(1b) or





wherein a, b, c, d, n, m, R ¹ , L ¹ , L ² , L ³ , L ⁴ , A and B are as defined above, can be prepared by methods known in the art, for example using known Suzuki-type or Stille-type copolymerisation conditions.

For example, the polymer comprising at least a unit of formula

wherein a, b, c, d, R ¹ , L ¹ , L ² , L ³ and L ⁴ are as defined above, can be prepared by treating compound of formula

wherein b, c, R ¹ , L ³ and L ⁴ are as defined for the unit of formula (1 ), and Y ¹ is at each occurrence I, Br, CI or 0-S(0) ₂ CF ₃ ,

with compounds of formulae and/or

wherein L ¹ , L ² , a and d is as defined for the unit of formula (1 ), and Z ^a and Z ^b are independently and at each occurrence selected from the group consisting of B(OZ ¹ )(OZ ² ), SnZ ¹ Z ² Z ³ ,

wherein Z ¹ , Z ² , Z ³ , Z ⁴ , Z ⁵ and Z ⁶ are independently from each other and at each occurence H or Ci-4-alkyl.

wherein n, m, R ¹ , L ¹ , L ² , A and B are as defined above, can be prepared by treating a compound of formula

wherein n, m, R ¹ , L ¹ , L ² , A and B are as defined for the unit of formula (5), and Y ² is at each occurrence I, Br, CI or 0-S(0) ₂ CF ₃ , with compounds of formulae

and/or

wherein L ¹ , L ² , n and m are as defined for the unit of formula (5), and Z ^a and Z ^b are independently and at each occurrence selected from the group consisting of B(OZ ¹ )(OZ ² ), SnZ ¹ Z ² Z ³ ,

wherein Z ¹ , Z ² , Z ³ , Z ⁴ , Z ⁵ and Z ⁶ are independently from each other and at each occurence H or Ci-4-alkyl.

When Z ^a and Z ^b are independently and at each occurrence selected from the group consisting of B(OZ ¹ )(OZ ² ),

wherein Z ¹ , Z ² , Z ³ , Z ⁴ , Z ⁵ and Z ⁶ are independently from each other and at each occurrence H or Ci-4-alkyl, the reaction is usually performed in the presence of a catalyst, preferably a Pd catalyst such as Pd(P(Ph) ₃ ) ₄ , Pd(OAc) ₂ and Pd ₂ (dba) ₃ , and a base such as K ₃ P0 ₄ , Na ₂ C0 ₃ , K ₂ C0 ₃ , LiOH and NaOMe. Depending on the Pd catalyst, the reaction may also require the presence of a phos- phine ligand such as P(Ph) ₃ , P(o-tolyl) ₃ and P(ferf-Bu) ₃ . The reaction is also usually performed at elevated temperatures, such as at temperatures in the range of 40 to 250 °C, preferably 60 to 200 °C. The reactions can be performed in the presence of a suitable solvent such as tetrahy- drofuran, toluene or chlorobenzene. The reaction is usually performed under inert gas.

When Z ^a and Z ^b are independently SnZ ¹ Z ² Z ³ , wherein Z ¹ , Z ² and Z ³ are independently from each other and at each occurrence Ci- ₄ -alkyl, the reaction is usually performed in the presence of a catalyst, preferably a Pd catalyst such as Pd(P(Ph) ₃ ) ₄ and Pd ₂ (dba) ₃ . Depending on the Pd catalyst, the reaction may also require the presence of a phosphine ligand such as P(Ph) ₃ , P(o- tolyl) ₃ and P(ferf-Bu) ₃ . The reaction is also usually performed at elevated temperatures, such as at temperatures in the range of 40 to 250 °C, preferably 60 to 200 °C. The reaction can be performed in the presence of a suitable solvent such as toluene or chlorobenzene. The reaction is usually performed under inert gas.

Also part of the present invention is a composition comprising semiconducting single-walled carbon nanotubes, a semiconducting polymer and solvent A, wherein the semiconducting polymer has a band gap in the range of 0.5 to 1.8 eV and solvent A comprises an aromatic or het- eroaromatic solvent (composition A).

Preferably, composition A is obtainable by the process of the present invention. Also part of the invention is a process for forming an electronic device, which process comprises the step of forming a layer, which layer comprises semiconducting single-walled carbon nanotubes and a semiconducting polymer, by applying a compositon comprising semiconducting single-walled carbon nanotubes, the semiconducting polymer and solvent A, wherein the semiconducting polymer has a band gap in the range of 0.5 to 1 .8 eV and solvent A comprises an aromatic or heteroaromatic solvent (composition A), to a precursor of the electronic device.

The layer can be formed by applying composition A to the precursor of the electronic device using any suitable liquid processing technique such as spin coating, blading, slot-die coating, drop-casting, spray-coating, ink-jetting or soaking the precursor of the electronic device in composition A. Preferably, composition A is applied by blading, slot-die coating, spray-coating or soaking the precursor of the electronic device in composition A. More preferably, composition A is applied by blading, slot-die coating or soaking the precursor of the electronic device in composition A.

The electronic device can be an organic photovoltaic device (OPVs), an organic field-effect transistor (OFETs), an organic light emitting diode (OLEDs) or an organic photodiode (OPDs).

Preferably, the electronic device is an organic photovoltaic device (OPVs), an organic field- effect transistor (OFETs) or an organic photodiode (OPDs).

More preferably, the electronic device is an organic field effect transistor (OFET).

Preferably, the electronic device is an organic field-effect transistor (OEFT) and the layer is the semiconducting layer.

Usually, an organic field effect transistor comprises a dielectric layer, a semiconducting layer and a substrate. In addition, an organic field effect transistor usually comprises a gate electrode and source/drain electrodes.

Preferably, the semiconducting layer can have a thickness of 5 to 500 nm, preferably of 10 to 100 nm, more preferably of 20 to 50 nm.

The dielectric layer comprises a dielectric material. The dielectric material can be silicon dioxide or aluminium oxide, or, an organic polymer such as polystyrene (PS), poly(methylmethacrylate) (PMMA), poly(4-vinylphenol) (PVP), polyvinyl alcohol) (PVA), benzocyclobutene (BCB), or poly- imide (PI). The dielectric layer can have a thickness of 10 to 2000 nm, preferably of 50 to 1000 nm, more preferably of 100 to 800 nm. The dielectric layer can in addition to the dielectric material comprise a self-assembled monolayer of organic silane derivates or organic phosphoric acid derivatives. An example of an organic silane derivative is octyltrichlorosilane. An examples of an organic phosphoric acid deriva- tive is octyldecylphosphoric acid. The self-assembled monolayer comprised in the dielectric layer is usually in contact with the semiconducting layer.

The source/drain electrodes can be made from any suitable organic or inorganic source/drain material. Examples of inorganic source/drain materials are gold (Au), silver (Ag), chromium (Cr) or copper (Cu), as well as alloys comprising at least one of these metals. The source/drain electrodes can have a thickness of 1 to 100 nm, preferably from 20 to 70 nm.

The gate electrode can be made from any suitable gate material such as highly doped silicon, aluminium (Al), tungsten (W), indium tin oxide or gold (Au), or alloys comprising at least one of these metals. The gate electrode can have a thickness of 1 to 200 nm, preferably from 5 to 100 nm.

The substrate can be any suitable substrate such as glass, or a plastic substrate such as poly- ethersulfone, polycarbonate, polysulfone, polyethylene terephthalate (PET) and polyethylene naphthalate (PEN). Depending on the design of the organic field effect transistor, the gate electrode, for example highly doped silicon can also function as substrate.

The organic field effect transistor can be prepared by methods known in the art.

For example, a bottom-gate top-contact organic field effect transistor can be prepared as follows: The dielectric material, for example AI2O3 or silicon dioxide, can be applied as a layer on a gate electrode such as highly doped silicon wafer, which also functions as substrate, by a suitable deposition method such as atom layer deposition or thermal evaporation. A self-assembled monolayer of an organic phosphoric acid derivative or an organic silane derivative can be applied to the layer of the dielectric material. For example, the organic phosphoric acid derivative or the organic silane derivative can be applied from solution using solution-deposition techniques. The semiconducting layer can be formed by either solution deposition such as soaking or thermal evaporation in vacuo of composition A on the self-assembled monolayer of the or- ganic phosphoric acid derivative or the organic silane derivative. Source/drain electrodes can be formed by deposition of a suitable source/drain material, for example tantalum (Ta) and/or gold (Au), on the semiconducting layer through a shadow masks.

For example, a bottom-gate bottom-contact organic field effect transistor can be prepared as follows: The dielectric material, for example silicon dioxide, can be applied as a layer on a gate electrode such as highly doped silicon wafer, which also functions as substrate, by a suitable deposition method such as atom layer deposition or thermal evaporation. Sorce/drain electrodes can be formed by evaporating a suitable source/drain material, for example gold (Au) or chromium (Cr), on photo-lithographically defined electrodes on the dielectric layer. The semi- conducting layer can be formed by applying composition A on the source/drain electrodes and the dielectric layer, followed by rinsing the layer with a suitable solvent such as toluene, and annealing the layer at elevated temperatures such as at a temperature in the range of 80 to 360 °C.

The channel width (W) is typically in the range of 10 to 2000 μΐτι and the channel length (L) is typically in the range of 5 to 100 μΐτι.

Also part of the present invention is an electronic device obtainable by the process of the present invention. Also part of the present invention is the use of a composition comprising semiconducting single- walled carbon nanotubes, a semiconducting polymer and solvent A, wherein the semiconducting polymer has a band gap in the range of 0.5 to 1.8 eV and solvent A comprises an aromatic or a heteroaromatic solvent (composition A) for forming a semiconducting layer, preferably in an electronic device.

The process of the present invention provides a composition comprising semiconducting single- walled carbon nanotubes, a semiconducting polymer and solvent A, wherein the semiconducting polymer has a band gap in the range of 0.5 to 1.8 eV and solvent A comprises an aromatic or a heteroaromatic solvent (composition A), which composition is suitable forming a semicon- ducting layer in an electronic device, preferably in an organic field effect transistor (OFETs).

The process of the present invention for the preparation of composition A is in particular advantageous as it is highly selective for large diameter semiconducting single-walled carbon nanotubes, for example semiconducting single-walled carbon nanotubes having a diameter in the range of 1.3 to 1 .6 nm, preferably 1 .4 to 1.5 nm. Compared with small-diameter (< 1.3 nm) semiconducting SWNTs, large-diameter semiconducting SWNTs are highly desired for logic circuits applications due to their negligible Schottky barrier and high charge carrier mobility while maintaining high on/off ratios. Furthermore the composition A is compatible with liquid processing techniques.

The organic field effect transistors (OFETs) of the present invention comprising a semiconducting layer formed from composition A show a high charge carrier mobility and a high on/off ratio.

Figure 1 shows the normalized UV-VIS spectra of compositions A-1 ', A-2', A-3' and A-4', all comprising semiconducting polymer removed semiconducting SWNTs, and the normalized UV- VIS spectra of SDBS-removed arc-discharged SWNTs in solid state. Figure 2 shows the normalized UV-VIS spectra of compositions A-3', A-5', A-6' and A-7', all comprising semiconducting polymer removed semiconducting SWNTs, in solid state. Figure 3 shows the Raman spectra of composition A-6 comprising semiconducting SWNTs and polymer Pc, of pristine arc-discharged SWNTs (tradename "P2 SWNT" from Carbon Solutions Inc, Riverside, California; 90% purity for SWNTs) and of polymer Pc at 785 nm excitation and 100 to 300 cnr ¹ Raman shift.

Figure 4 shows a chiral angle (Θ) versus diameter (d) map of the composition A-6 comprising semiconducting SWNTs and polymer Pc.

Figure 5 illustrates how to determine the absorption onset (λ onset) of the semiconducting pol- ymer from the thin film UV-Vis-NIR spectra of the semiconducting polymer at 25 °C.

Figure 6 shows the normalized UV-VIS spectra of compositions A-8', A-9', A-10', A-1 1 ' and A-12', all comprising semiconducting polymer removed semiconducting SWNTs, in solid state. Figure 7 shows the normalized UV-VIS spectra of compositions A-13', A-14', A-15' and A-16', all comprising semiconducting polymer removed semiconducting SWNTs, and the normalized UV-VIS spectra of SDBS-removed arc-discharged SWNTs in solid state.

Examples

Example 1

Preparation of Polymer Pc

815 mg (2.423 mmol) of compound 2a, 1972 mg (2.181 mmol) of compound 3a, 179 mg (0.242 mmol) of compound 3b, 78.30 mg of tris(dibenzylideneacetone)dipalladium(0) (Pd2(dba)3) and 48.15 mg of tri-tert-butylphosphonium tetrafluoroborate ((ferf-Bu)3P x H BF4) are placed together in 50 ml of tetrahydrofuran under Argon. The reaction mixture is heated to reflux, and then 1600 mg potassium phosphate in 5 ml of degassed water is added. The reaction mixture is refluxed overnight. Then the reaction mixture is poured on water and the precipitate is filtered and washed with water and methanol. The precipitate is then Soxhlet fractionated with heptane, tetrahydrofuran, toluene, chloroform and chlorobenzene. To remove catalyst residues, the selected fraction is evaporated and the residue is dissolved in 150 ml of chlorobenzene. Then 50 ml of a 1 % NaCN aqueous solution is added and the mixture is heated and stirred overnight at reflux. The phases are separated and the organic phase is washed 3 times with 10 ml of deion- ized water for 3 hours at reflux. Polymer Pc is then precipitated from the organic phase by addition of methanol. The precipitated Pc is filtered, washed with methanol and dried. Polymer Pc is a random polymer. GPC (1 ,2,4-trichlorobenzene, 150 °C, polystyrene standard): M _n = 47.0 kDa, Mw = 129.6 kDa, PDI = 2.76. UV-VIS-absorption spectrum: X _max : 840 nm (film) and 832 nm (10 ⁵ M solution in toluene). The film was prepared by spin-coating a solution of 5 mg Polymer Pc in 25 ml. toluene on a glass substrate. Elemental analysis: C 71 .60%, H 8.73%, N 3.59%, S 1 1 .40%. Band gap Eg ⁰ ^: 1 .35 eV. Example 2

Preparation of polymer Pa

Polymer Pa is prepared in analogy to Polymer Pc in example 1 , except that 733 mg (2.181 mmol) of compound 2a and 1972mg (2.181 mmol) of compound 3a, and no compound 3b are used. Polymer Pa is a random polymer. GPC (1 ,2,4-trichlorobenzene, 150 °C, polystyrene standard): M _n = 36.0 kDa, M _w = 36.0 kDa, PDI = 1 .82. UV-VIS-absorption spectrum: X _max : 840 nm (film) and 840 nm (10 ⁵ M solution in toluene). The thin film was prepared by spin-coating a solution of 5 mg Polymer Pa in 25 ml. toluene on a glass substrate. Elemental analysis: C 72.50%, H 8.95%, N 3.66%, S 1 1 .20%. Band gap Eg°P*: 1 .36 eV.

Example 3

Preparation of polymer Pb

Polymer Pb is prepared in analogy to Polymer Pc in example 1 , except that 722 mg (2.296 mmol) of compound 2a and 1972 mg (2.181 mmol) of compound 3a, and 85 mg (0.1 15 mmol) of compound 3b are used. Polymer Pb is a random polymer. GPC (1 ,2,4-trichlorobenzene, 150 °C, polystyrene standard): M _n = 43.7 kDa, M _w = 150.7 kDa, PDI = 3.45. UV-VIS-absorption spectrum: λ,^: 836 nm (film) and 828 nm (10 ⁵ M solution in toluene). The thin film was prepared by spin-coating a solution of 5 mg Polymer Pb in 25 ml. toluene on a glass substrate. Elemental analysis: C 72.85%, H 8.69%, N 3.61 %, S 1 1 .40%. Band gap Eg°P*: 1 .35 eV.

Example 4

Preparation of polymer Pd

Polymer Pd is prepared in analogy to Polymer Pc in example 1 , except that 916 mg (2.726 mmol) of compound 2a and 1972 mg (2.181 mmol) of compound 3a, and 403 mg (0.545 mmol) of compound 3b are used. Polymer Pd is a random polymer. GPC (1 ,2,4-trichlorobenzene, 150 °C, polystyrene standard): M _n = 30.7 kDa, M _w = 80.2 kDa, PDI = 2.61 . UV-VIS-absorption spectrum: λ,τ^: 844 nm (film) and 848 nm (10 ⁵ M solution in toluene). The thin film was prepared by spin-coating a solution of 5 mg Polymer Pd in 25 ml. toluene on a glass substrate. Elemental analysis: C 72.45%, H 8.51 %, N 3.79%, S 1 1 .60%. Band gap Eg°P*: 1 .35 eV. Example 5

Preparation of Polymer Pe

Polymer Pe is prepared in analogy to Polymer Pa in example 2, except that 739 mg (1.768 mmol) of compound 2b and 1995 mg (1 .768 mmol) of compound 3c are used. GPC (1 ,2,4- trichlorobenzene, 150 °C, polystyrene standard): M _n = 63.8 kDa, M _w = 64.9 kDa, PDI = 1 .76.

Example 6

Preparation of compositions comprising semiconducting SWNTs and polymer Pa, Pb, Pc, respectively, Pd

5 mg of polymer Pa, Pb, Pc, respectively, Pd and 3 mg of arc-discharged SWNTs (tradename "P2 SWNT" from Carbon Solutions Inc, Riverside, California; 90% purity for SWNTs, diameters in the range of about 1.1 -1.8 nm, amout of metallic SWNT about 30%) were mixed in 25 mL of toluene and ultrasonicated for 30 min at an amplitude level of 70% (Cole Parmer ultrasonicator 750 W). The dispersion was then centrifuged at 17 000 rpm for 30 min at 16 °C (Sorvall RC5C- plus). The supernatants were collected and represent composition A-1 , A-2, A-3, respectively, A-4.

Composition A-1 comprises semiconducting SWNTs and polymer Pa.

Composition A-2 comprises semiconducting SWNTs and polymer Pb.

Composition A-3 comprises semiconducting SWNTs and polymer Pc.

Composition A-4 comprises semiconducting SWNTs and polymer Pd. Compositions A-1 , A-2, A-3 and A-4 were drop-casted on a glass substrate and annealed at 500 °C under Argon for 1 h in order to yield polymer-removed compositions A-1 ', A-2', A-3' and A-4'. Composition A-1 ' comprises semiconducting SWNTs and is derived from composition A-1. Composition A-2' comprises semiconducting SWNTs and is derived from composition A-2. Composition A-3' comprises semiconducting SWNTs and is derived from composition A-3. Composition A-4' comprises semiconducting SWNTs and is derived from composition A-4. For comparison, arc-discharged SWNTs (tradename "P2 SWNT" from Carbon Solutions Inc, Riverside, California; 90% purity for SWNTs) dispersed in 1 % sodium dodecylbenzenesulfonate (SDBS) aqueous solution was drop-casted on a glass substrate and annealed at 500 °C under Ar for 1 h in order to yield SDBS-removed arc-discharged SWNTs. Figure 1 shows the normalized UV-VIS spectra of compositions A-1 ', A-2', A-3', A-4' and SDBS- removed arc-discharged SWNTs in solid state.

Metallic SWNTs absorb in the range of 600 to 850 nm. Semiconducting SWNTs absorb in the range of 900 to 1330 nm. Figure 1 clearly shows that the absorption of compositions A-1 ', A-2', A-3', A-4' in the range of 600 to 850 nm is decreased compared to the absorption of SDS- removed arc-discharged SWNTs in this wavelength range. Thus, the ratio of semiconducting SWNT/metallic SWNT is higher in A-1 ', A-2', A-3', A-4' compositions than in SDBS-removed arc-discharged SWNTs. Composition A-4' shows the highest ratio of semiconducting

SWNT/metallic SWNT.

Example 7

Preparation of compositions comprising semiconducting SWNTs and polymer Pc 5 mg of polymer Pc and 3 mg, 5 mg, 7 mg, respectively, 10 mg of arc-discharged SWNTs (tradename "P2 SWNT" from Carbon Solutions Inc, Riverside, California; 90% purity for SWNTs) were mixed in 25 ml. of toluene and ultrasonicated for 30 min at an amplitude level of 70% (Cole Parmer ultrasonicator 750 W). The dispersion was then centrifuged at 17 000 rpm for 30 min at 16 °C (Sorvall RC5C-plus). The supernatants were collected and represent com- position A-3, A-5, A-6 and A-7.

Composition A-3 comprises semiconducting SWNTs and polymer Pc, and is derived from the dispersion of 5 mg Pc and 3 mg arc-discharged SWNTs. Composition A-5 comprises semiconducting SWNTs and polymer Pc, and is derived from the dispersion of 5 mg Pc and 5 mg arc-discharged SWNTs. Composition A-6 comprises semiconducting SWNTs and polymer Pc, and is derived from the dispersion of 5 mg Pc and 7 mg arc-discharged SWNTs.

Composition A-7 comprises semiconducting SWNTs and polymer Pc, and is derived from the dispersion of 5 mg Pc and 10 mg arc-discharged SWNTs.

Compositions A-3, A-5, A-6 and A-7 were drop-casted on a glass substrate and annealed at 500 °C under Argon for 1 h in order to yield polymer-removed composition A-3', A-5', A-6' and A-7'.

Composition A-3' comprises semiconducting SWNTs and is derived from composition A-3. Composition A-5' comprises semiconducting SWNTs and is derived from composition A-5. Composition A-6' comprises semiconducting SWNTs and is derived from composition A-6. Composition A-7' comprises semiconducting SWNTs and is derived from composition A-7.

Figure 2 shows the normalized UV-VIS spectra of compositions A-3', A-5', A-6', A-7' in solid state. Metallic SWNTs absorb in the range of 600 to 850 nm. Semiconducting SWNTs absorb in the range of 900 to 1330 nm. Figure 2 shows that that the absorption of compositions A-6' in the range of 600 to 850 nm is more decreased than to the absorption of A-3', A-5' and A-7' in this wavelength range. Thus, the dispersion of 5 mg of polymer Pc and 7 mg of arc-discharged SWNTs in 25 mL toluene yields the highest semiconducting SWNT/metallic SWNT ratio in the supernatant.

Raman spectra (Model: LabRam Aramis from Horiba Jobin Yvon) of composition A-6 (comprising semiconducting SWNTs and polymer Pc was carried out at 1.58 eV (785 nm) excitation at x100 magnification and 1 -μιτι spot size. The peak positions were calibrated with the Si line at 521 cm ^"1 .

For comparison, Raman spectra of pristine arc-discharged SWNTs (tradename "P2 SWNT" from Carbon Solutions Inc, Riverside, California; 90% purity for SWNTs) and of polymer Pc were also recorded.

Figure 3 shows the Raman spectra of composition A-6, of pristine arc-discharged SWNTs (tradename "P2 SWNT" from Carbon Solutions Inc, Riverside, California; 90% purity for SWNTs) and of polymer Pc at 785 nm excitation and 100 to 300 cm ¹ Raman shift.

Figure 3 shows that under 785 nm excitation, a strong peak at 162 cm ¹ corresponding to radial breathing modes of metallic SWNTs was observed in pristine arc-discharged SWNTs, and that composition A-6 only shows a very, very weak peak at 162 cm ¹ . The polymer Pc does not show any peak at 162 cm ¹ .Thus, the ratio of semiconducting SWNT/metallic SWNT is higher in A-6 composition than in pristine arc-discharged SWNTs.

The Phospholuminescence excitation/emission (PLE) spectra on composition A-6 comprising semiconducting SWNTs and polymer Pc wre taken on a home-built NIR-II spectroscopy setup with measured range of 1 100-2100 nm. The excitation in the 700-1080 nm range was provided by a white-light source of an ozone-free Hg/Xe lamp (Oriel) with a total output power of 200 W. The lamp illumination was filtered by a UV filter (Thorlabs) to remove the ultraviolet light, and an 1 100 nm short-pass filter (Omega) to remove the NIR-II light with wavelengths longer than 1 100 nm. The excitation light cleaned by these filters was dispersed by a grating-based monochroma- tor (Oriel), generating excitation lines at a single, user-designated wavelength with a bandwidth of 15 nm. The monochromatic excitation light was then focused onto a 1 mm path quartz cu- vette (Starna Cells) with the SWNT solution loaded inside. The emitted fluorescence from the SWNT solution was collected in the transmission geometry, where the transmitted excitation light was rejected by an 1 100-nm long-pass filter (Thorlabs). Fluorescence in the range of 1 100- 2100 nm was allowed to pass through the emission filter and was collected by a grating-based triple-turret spectrometer (Acton SP2300i) equipped with a one-dimensional (1 D) indium- gallium-arsenide (InGaAs) linear array detector (Princeton Instruments 1 D OMA-V). The raw PLE spectra were corrected after data acquisition, in order to account for the difference of excitation power at different wavelengths, the extinction profile of the emission filter, and the sensitivity profile of the 1 D detector, using the MATLAB software. According to the PLE results, a chiral angle (Θ) versus diameter (d) map is generated from the data. The map is shown in Figure 4. Within the map, the circle areas are proportional to the concentration of the single semiconducting SWNT in the dispersion. Figure 4 shows that the semiconducting SWNTs dispersed by polymer Pc have diameters in the range from 1 .3 to 1 .6 nm, with the majority of the semiconducting SWNTs dispersed by polymer Pc have diameters in the range of 1.4 to 1 .5 nm.

Example 8

Preparation of an organic field effect transistor (OFET), wherein the semiconducting layer is formed from composition A-6 comprising semiconducting SWNTs and polymer Pc

The drain and source electrodes for bottom-contact device electrodes were fabricated on a highly doped 4 inch silicon wafer with 300 nmSi02 by photolithography. A bilayer of Cr (3 nm) and Au (25 nm) was deposited by thermal evaporation as the source-drain electrodes, followed by a lift-off process in acetone. The substrate was then soaked in a diluted solution of composition A-6 comprisingsemiconducting SWNTs and polymer Pc prepared as described in example 7 (1 : 5 ratio is toluene) for 5 h, and then substrate was rinsed with toluene and annealed at 200 °C for 30min under ambient conditions.

The evaluations of the OFET (L = 100 μΐτι, W = 2000 μΐτι) were carried out in atmosphere on a probe stage using a Keithley 4200 SCS as parameter analyzer. The carrier mobility, μ, was calculated from the data in the saturated regime (Vts = - 40V). The OFET simultaneously demonstrate a high hole mobility of 41.2 cm ² V ^~1 s ^~1 and an on/off ratio of 3.6x10 ⁴ .

Example 9

Preparation of compositions comprising semiconducting SWNTs and polymer Pe

5 mg of polymer Pe and 5 mg, 7 mg, 8 mg, 10 mg, respectively, 12 mg of arc-discharged SWNTs (tradename "P2 SWNT" from Carbon Solutions Inc, Riverside, California; 90% purity for SWNTs) were mixed in 25 ml. of toluene and ultrasonicated for 30 min at an amplitude level of 70% (Cole Parmer ultrasonicator 750 W). The dispersion was then centrifuged at 17 000 rpm for 30 min at 16 °C (Sorvall RC5C-plus). The supernatants were collected and represent composition A-8, A-9, A-10, A-1 1 and A-12. Composition A-8 comprises semiconducting SWNTs and polymer Pe, and is derived from the dispersion of 5 mg Pe and 5 mg arc-discharged SWNTs.

Composition A-9 comprises semiconducting SWNTs and polymer Pe, and is derived from the dispersion of 5 mg Pe and 7 mg arc-discharged SWNTs.

Composition A-10 comprises semiconducting SWNTs and polymer Pe, and is derived from the dispersion of 5 mg Pe and 8 mg arc-discharged SWNTs.

Composition A-1 1 comprises semiconducting SWNTs and polymer Pe, and is derived from the dispersion of 5 mg Pe and 10 mg arc-discharged SWNTs.

Composition A-12 comprises semiconducting SWNTs and polymer Pe, and is derived from the dispersion of 5 mg Pe and 12 mg arc-discharged SWNTs.

Compositions A-8, A-9, A-10, A-11 and A-12 were drop-casted on a glass substrate and annealed at 500 °C under Argon for 1 h in order to yield polymer-removed compositions A-8', A-9', A-10', A-1 1 ' and A-12'. Composition A-8' comprises semiconducting SWNTs and is derived from composition A-8. Composition A-9' comprises semiconducting SWNTs and is derived from composition A-9. Composition A-10' comprises semiconducting SWNTs and is derived from composition A-10. Composition A-1 1 ' comprises semiconducting SWNTs and is derived from composition A-1 1. Composition A-12' comprises semiconducting SWNTs and is derived from composition A-12.

Figure 6 shows the normalized U V-VIS spectra of compositions A-8', A-9', A-10', A-1 1 ' and A-12' in solid state.

Metallic SWNTs absorb in the range of 600 to 850 nm. Semiconducting SWNTs absorb in the range of 900 to 1330 nm. Figure 6 shows that that the absorption of compositions A-1 1 ' in the range of 600 to 850 nm is more decreased than to the absorption of A-8', A-9', A-10' and A-12' in this wavelength range. Thus, the dispersion of 5 mg of polymer Pe and 10 mg of arc- discharged SWNTs in 25 ml. toluene yields the highest semiconducting SWNT/metallic SWNT ratio in the supernatant.

Example 10

Preparation of an organic field effect transistor (OFET), wherein the semiconducting layer is formed from compositions A-8, A-9, A-10, A-1 1 , respectively, A-12 comprising semiconducting SWNTs and polymer Pe

The drain and source electrodes for bottom-contact device electrodes were fabricated on a highly doped 4 inch silicon wafer with 300 nmSiC>2 by photolithography. A bilayer of Cr (3 nm) and Au (25 nm) was deposited by thermal evaporation as the source-drain electrodes, followed by a lift-off process in acetone. Then, composition A-8, A-9, A-10, A-1 1 , respectively, A-12 comprising semiconducting SWNTs and polymer Pe prepared as described in example 9 was deposited by solution shearing (slot-die coating) under ambient conditions. The composition (15 μΙ_) was first sheared on the substrate at a speed of 0.05 mm/s. Then toluene (20 μΙ_) was sheared on the substrate at a speed of 0.05 mm/s to remove most of the wrapped polymers. The two shearing processes were repeated for 5 times to achieve a dense SWNT. Finally, the substrate was rinsed with toluene, dried with nitrogen flow, and annealed at 150 °C for 30 min under ambient conditions.

The evaluations of the OFETs (L = 20 μΐτι or 30 μΐτι) were carried out in atmosphere on a probe stage using a Keithley 4200 SCS as parameter analyzer. The carrier mobility, μ, was calculated from the data in the saturated regime (Vks = - 40V). The OFET simultaneously demonstrate high hole mobilities of about 41 to 57 cm ² V ^~1 s ^~1 and on/off ratios of about 10 ³ to 10 ⁴ .

The device with the highest mobility of 57 cm s was obtained with composition A-1 1. The de- vice had a channel length of 30μΐτι and a channel width of 600μΐτι, and the on/off ratio was 1 .5x10 ³ . Example 1 1

Preparation of Polymer Pf

Polymer Pf was prepared in analogy to Polymer Pe in example 5, except that 821 mg (1 .962 mmol) of compound 2b and 2000 mg (1 .962 mmol) of compound 3d are used. GPC (1 ,2,4- trichlorobenzene, 150 °C, polystyrene standard): M _n = 13.2 kDa, M _w = 26.7kDa, PDI = 2.03. Example 12

Preparation of Polymer Pg

Polymer Pg was prepared in analogy to Polymer Pc in example 1 , except that 1006 mg (2.9 mmol) of compound 2a and 137 mg (0.3 mmol) of compound 2b, and 2989 mg (3.2 mmol) of compound 3a are used. Polymer Pg is a random polymer. GPC (1 ,2,4-trichlorobenzene, 150 °C, polystyrene standard): M _n = 18.4 kDa, M _w = 35.8 kDa, PDI = 1.94. Example 13

Preparation of Polymer Ph

Polymer Ph was prepared in analogy to Polymer Pc in example 1 , except that 602 mg (1.75 mmol) of compound 2a and 184 mg (0.4 mmol) of compound 2b, and 201 1 mg (2.15 mmol) of compound 3a are used. Polymer Ph is a random polymer. GPC (1 ,2,4-trichlorobenzene, 150 °C, polystyrene standard): M _n = 24.5 kDa, M _w = 54.7 kDa, PDI = 1 .99.

Example 14

Preparation of Polymer Pi

Polymer Pi was prepared in analogy to Polymer Pc in example 1 , except that 465 mg (1 .3 mmol) of compound 2a and 379 mg (0.9 mmol) of compound 2b, and 2067 mg (2.2 mmol) of compound 3a are used. Polymer Pi is a random polymer. GPC (1 ,2,4-trichlorobenzene, 150 °C, polystyrene standard): M _n = 16.4 kDa, M _w = 31.1 kDa, PDI = 1 .90.

Example 15

Preparation of compositioms comprising semiconducting SWNTs and polymer Pf, Pg, Ph, respectively, Pi

5 mg of polymer Pf, Pg, Ph, Pi and 5 mg of arc-discharged SWNTs (tradename "P2-SWNT" from Carbon Solutions Inc, Riverside, California; 90% purity for SWNTs) were mixed in 25 mL of toluene and ultrasonicated for 30 min at an amplitude level of 70% (Cole Parmer ultrasonicator 750 W). The dispersion was then centrifuged at 17 000 rpm for 30 min at 16 °C (Sorvall RC5C- plus). The supernatants were collected and represent composition A-13, A-14, A-15, respectively, A-16.

Composition A-13 comprises semiconducting SWNTs and polymer Pf.

Composition A-14 comprises semiconducting SWNTs and polymer Pg.

Composition A-15 comprises semiconducting SWNTs and polymer Ph.

Composition A-16 comprises semiconducting SWNTs and polymer Pi.

Compositions A-13, A-14, A-15 and A-16 were drop-casted on a glass substrate and annealed at 500 °C under Argon for 1 h in order to yield polymer-removed compositions A-13', A-14', A- 15' and A-16'. Composition A-13' comprises semiconducting SWNTs and is derived from composition A-13. Composition A-14' comprises semiconducting SWNTs and is derived from composition A-14. Composition A-15' comprises semiconducting SWNTs and is derived from composition A-15. Composition A-16' comprises semiconducting SWNTs and is derived from composition A-16.

For comparison, arc-discharged SWNTs (tradename "P2 SWNT" from Carbon Solutions Inc, Riverside, California; 90% purity for SWNTs) dispersed in 1 % sodium dodecylbenzenesulfonate (SDBS) aqueous solution was drop-casted on a glass substrate and annealed at 500 °C under Ar for 1 h in order to yield SDBS-removed arc-discharged SWNTs.

Figure 7 shows the normalized UV-VIS spectra of compositions A-13', A-14', A-15', A-16' and SDBS-removed arc-discharged SWNTs in solid state

Metallic SWNTs absorb in the range of 600 to 850 nm. Semiconducting SWNTs absorb in the range of 900 to 1330 nm. Figure 7 clearly shows that the absorption of compositions A-13', A- 14', A-15', A-16' in the range of 600 to 850 nm is decreased compared to the absorption of SDS-removed arc-discharged SWNTs in this wavelength range. Figure 7 also shows that the absorption of compositions A-13', A-14', A-15', A-16' in the range of 900 to 1330 nm is increased compared to the absorption of SDS-removed arc-discharged SWNTs in this wavelength range. Thus, the ratio of semiconducting SWNT/metallic SWNT is higher in A-13', A-14', A-15', A-16' compositions than in SDBS-removed arc-discharged SWNTs. Composition A-13' shows the highest ratio of semiconducting SWNT/metallic SWNT.