SPUTTERING TARGET AND METHOD FOR PRODUCING SAME, AND METHOD FOR PRODUCING THIN FILM TRANSISTOR

WIPO Patent Application WO/2012/117926

A1

The purpose of the present invention is to provide a sputtering target which enables the formation of a film having good properties. A sputtering target (100) comprises multiple target materials (10) comprising IGZO, a bucking plate (20) comprising Cu and the like, and a bonding material (30) comprising In and the like. The multiple target materials (10) and the bucking plate (20) are bonded together through the bonding material (30). On the surface of each of the target materials (10), a groove (40) having a length (L2), a width (W3) and a depth (D1) is formed. The groove (40) is formed in parallel with a joint part (15) between adjacent two of the target materials (10) and is also formed near the joint part (15) (a place that is a distance (W2) apart from the joint part (15)). The width (W3) of the groove (40) and the distance (W2) between the joint part (15) and the groove (40) are sufficiently smaller compared with the lengths (L1) of the upper and lower sides of each of the target materials (10).

KUSUMI TAKATSUGU
KANZAKI YOHSUKE

PCT/JP2012/054370

September 07, 2012

February 23, 2012

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SHARP KK (JP)
KUSUMI TAKATSUGU
KANZAKI YOHSUKE

C23C14/34; H01L21/203; H01L21/363

JPS61117274A	1986-06-04
JP2000345326A	2000-12-12
JPH1161395A	1999-03-05
JP2003055763A	2003-02-26
JP2009127125A	2009-06-11
JP2011009719A	2011-01-13

SHIMADA, AKIHIRO (JP)
Akihiro Shimada (JP)

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