Title:
SUBSTRATE PROCESSING DEVICE, METHOD FOR CONTROLLING SUBSTRATE PROCESSING DEVICE, CLEANING METHOD, METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE, AND RECORDING MEDIUM
Document Type and Number:
WIPO Patent Application WO/2014/142031
Kind Code:
A1
Abstract:
A substrate processing device provided with at least one processing chamber for processing a substrate, the substrate processing device provided with: a substrate loading unit for loading the substrate, the substrate loading unit being provided in the processing chamber; a reactive gas supply unit for supplying, to a plurality of regions, a reactive gas for removing a deposit deposited on at least the substrate loading unit by processing of the substrate; an inert gas supply unit for supplying an inert gas to the plurality of regions; and a control unit for controlling at least the reactive gas supply unit and the inert gas supply unit so as to adjust each of the supplied flow rate of the reactive gas and the supplied flow rate of the inert gas supplied to the plurality of regions in accordance with a film thickness value of the deposit deposited on the substrate loading unit during supply of the reactive gas to the plurality of regions and removal of the deposit.
Inventors:
KOTANI HIROSHI (JP)
UEDA TATSUSHI (JP)
UEDA TATSUSHI (JP)
Application Number:
PCT/JP2014/055998
Publication Date:
September 18, 2014
Filing Date:
March 07, 2014
Export Citation:
Assignee:
HITACHI INT ELECTRIC INC (JP)
International Classes:
H01L21/205; C23C16/44; H01L21/22; H01L21/3065; H01L21/31; H01L21/316; H01L21/324
Domestic Patent References:
| WO2007108401A1 | 2007-09-27 | |||
| WO2007116768A1 | 2007-10-18 |
Foreign References:
| JP2008218877A | 2008-09-18 | |||
| JPH10176272A | 1998-06-30 | |||
| JP2006319041A | 2006-11-24 | |||
| JPH07283147A | 1995-10-27 | |||
| JPH08330243A | 1996-12-13 |
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