Login| Sign Up| Help| Contact|

Patent Searching and Data


Title:
SUBSTRATE TREATMENT METHOD AND SUBSTRATE TREATMENT DEVICE
Document Type and Number:
WIPO Patent Application WO/2021/100594
Kind Code:
A1
Abstract:
Provided are a substrate treatment method and a substrate treatment device, whereby it becomes possible to improve a film deposition rate.　The substrate treatment method comprises repeating a step of feeding a silicon-containing gas to form an adsorbed layer on a substrate, a step of generating He-containing plasma to modify the adsorbed layer and a step of generating plasma of a reaction gas and reacting the adsorbed layer with the plasma, thereby forming a silicon-containing film.

More Like This:
JP3476409PLASMA CVD DEVICE
JP6456971A method for producing an organic metal-organic framework thin film using a gas phase precursor
JP3916565Manufacturing method of electronic device material
Inventors:
KAGAYA MUNEHITO (JP)
Application Number:
PCT/JP2020/042215
Publication Date:
May 27, 2021
Filing Date:
November 12, 2020
Export Citation:
Click for automatic bibliography generation   Help
Assignee:
TOKYO ELECTRON LTD (JP)
International Classes:
C23C16/455; C23C16/42; H01L21/31; H01L21/318
Foreign References:
JP2016066794A2016-04-28
JP2015510263A2015-04-02
JP2016063232A2016-04-25
Attorney, Agent or Firm:
ITOH, Tadashige et al. (JP)
Download PDF:
View/Download PDF      PDF Help



 
Previous Patent: RANGING DEVICE AND RANGING METHOD

Next Patent: COPPER POWDER AND METHOD FOR PRODUCING THE SAME