Title:
TARGET FOR MAGNETRON SPUTTERING AND PROCESS FOR PRODUCTION THEREOF
Document Type and Number:
WIPO Patent Application WO/2012/017952
Kind Code:
A1
Abstract:
Provided is a target for use in magnetron sputtering, which can increase the amount of leakage magnetic flux during the magnetron sputtering compared with that achieved in conventional techniques without decreasing the content of a ferromagnetic metal element in the target.
A target for use in magnetron sputtering, which contains a ferromagnetic metal element and comprises a magnetic phase (12) that contains the ferromagnetic metal element, multiple non-magnetic phases (14, 16) that contain the ferromagnetic metal element and that are composed of different constituent elements from each other or have different constituent element contents from each other, and an oxide phase (18), wherein each of the magnetic phase (12) and the multiple non-magnetic phases (14, 16) are separated from one another by the oxide phase (18).
Inventors:
MIYASHITA TAKANOBU (JP)
GOTO YASUYUKI (JP)
GOTO YASUYUKI (JP)
Application Number:
PCT/JP2011/067475
Publication Date:
February 09, 2012
Filing Date:
July 29, 2011
Export Citation:
Assignee:
TANAKA PRECIOUS METAL IND (JP)
MIYASHITA TAKANOBU (JP)
GOTO YASUYUKI (JP)
MIYASHITA TAKANOBU (JP)
GOTO YASUYUKI (JP)
International Classes:
C23C14/34; C22C1/05; B22F1/16; B22F9/08; C22C19/07
Foreign References:
| JP4422203B1 | 2010-02-24 | |||
| JP2008163438A | 2008-07-17 | |||
| JP2009132975A | 2009-06-18 |
Attorney, Agent or Firm:
MATSUYAMA, Keisuke et al. (JP)
Keisuke Matsuyama (JP)
Keisuke Matsuyama (JP)
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Claims: