Title:
TEST METHOD AND TEST APPARATUS FOR MEMORY
Document Type and Number:
WIPO Patent Application WO/2023/245824
Kind Code:
A1
Abstract:
Embodiments of the present disclosure disclose a test method and a test apparatus for a memory. The method comprises: writing first data corresponding to a first topological graph into a memory; obtaining first read data during a process of performing a row hammer operation on the memory; writing second data corresponding to a second topological graph into the memory, wherein the first topological graph is different from the second topological graph; obtaining second read data during a process of performing the row hammer operation on the memory; determining a first failure curve according to a first failure quantity of the first read data and a preset row hammer parameter; determining a second failure curve according to a second failure quantity of the second read data and the preset row hammer parameter; and determining a failure mode of the memory according to the first failure curve and the second failure curve.
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Inventors:
LAN GUOHUA (CN)
WU CHI-SHIAN (CN)
WU CHI-SHIAN (CN)
Application Number:
PCT/CN2022/109932
Publication Date:
December 28, 2023
Filing Date:
August 03, 2022
Export Citation:
Assignee:
CHANGXIN MEMORY TECH INC (CN)
International Classes:
H01L21/768; H01L23/48; H10B12/00
Foreign References:
| CN114566207A | 2022-05-31 | |||
| CN114283870A | 2022-04-05 | |||
| CN113744778A | 2021-12-03 | |||
| CN113448792A | 2021-09-28 |
Attorney, Agent or Firm:
CHINA PAT INTELLECTUAL PROPERTY OFFICE (CN)
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