Title:
THIN FILM FORMING METHOD AND THIN FILM FORMING DEVICE
Document Type and Number:
WIPO Patent Application WO/2003/005077
Kind Code:
A1
Abstract:
A vapor−deposition process for depositing TiO2 and a vapor deposition process for depositing SiO2 are alternately repeated in a multi−layer film forming process. A refractive index that a thin film formed by each vapor−depositing will provide is individually determined prior to each relative vapor−depositing, and vapor−deposition control data is prepared based on such a refractive index. Each vapor−deposition is controlled by using a relative vapor−deposition control data thus prepared. Therefore, each vapor−deposition process can be accurately controlled according to the refractive index of a thin film even if repeated vapor−deposition processes change the refractive index. Accordingly, a multi−layer film having desired optical characteristics can be formed.
Inventors:
OHBAYASHI YASUSHI (JP)
Application Number:
PCT/JP2002/006729
Publication Date:
January 16, 2003
Filing Date:
July 03, 2002
Export Citation:
Assignee:
HAMAMATSU PHOTONICS KK (JP)
OHBAYASHI YASUSHI (JP)
OHBAYASHI YASUSHI (JP)
International Classes:
C23C14/08; C23C14/24; C23C14/30; C23C14/54; G02B5/28; (IPC1-7): G02B5/28; C23C14/08; C23C14/24
Foreign References:
| JP2000171602A | 2000-06-23 | |||
| JPH06240440A | 1994-08-30 | |||
| JPH10332931A | 1998-12-18 | |||
| US5911856A | 1999-06-15 | |||
| EP0552648A1 | 1993-07-28 |
Attorney, Agent or Firm:
Koizumi, Shin (37-4 Yushima 3-chom, Bunkyo-ku Tokyo, JP)
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