received by the International Bureau on 07 October 2013(07.10.2013)

1. A thin film (301) for a lead (300) for brain applications with at least one section (150) comprising a high conductive metal (10) and a low conductive metal (20), whereby the low conductive metal (20) is a biocompatible metal (20) and has a lower electrical conductivity than the high conductive metal (10) and whereby the high conductive metal (10) is at least partially encapsuled by the low conductive metal (20) wherein a thin film (301) is at least partially encapsuled by a flexible polymer (40).

2. The thin film (301) according to claim 1, characterized in that the high conductive metal (10) is completely encapsuled by the low conductive metal (20) and/or that the high conductive metal (10) and the low conductive metal (20) are at least partially encapsuled by a ceramic material (30).

3. The thin film (301) according to any of the preceding claims, characterized in that the high conductive metal (10) comprises gold and/or copper and/or aluminium and/or silver or is gold or copper or aluminium or silver.

4. The thin film (301) according to any of the preceding claims, characterized in that the low conductive metal (20) comprises platinum and/or titanium and/or titanium nitride or is platinum or titanium or titanium nitride.

5. The thin film (301) according to claim 3 and 4, characterized In that the high conductive metal ( 10) is gold and that the low conductive metal (20) Is platinum.

6. The thin film (301) according to any of claims 2 to 5, characterized In that the ceramic material (30) comprises SiN, SiOX, Sl-Carbid and/or Alumina or that the ceramic is SIN, SiOX, Si-Carbid and/or Alumina.

7. The thin film (301) according to any of the preceding claims, characterized In that the flexible polymer (40) is a biocompatible polymer.

8. The thin film (301) according to any of the preceding claims, characterized In that the flexible polymer (40) Is Parylene or SU-8 or silicone or polyimide or polyurethane.

9. The thin film (301) according to claims 7 or 8, preferably according to claims 7 or 8 and one of claims 2 to 6, characterized in that the flexible polymer (40) is completely encapsuling the low conductive metal (20) and/or preferably also completely encapsuling the ceramic material (30).

10. The thin film (301) according to any of the preceding claims, characterized in that an additional layer or pattern (50) is arranged on the low conductive metal (20), whereby the layer or pattern (50) preferably comprises titanium or consists of titanium.

11. A method of manufacturing a thin film (301) for a lead (300) for brain applications, preferably a thin film (301) for a lead (300) according to any of the claims 1 to 10, the thin film (301) comprising at least one section (150) with a high conductive metal (10) and a low conductive metal (20), whereby the low conductive metal (20) is a biocompatible metal (20) and has a lower electrical conductivity than the high conductive metal (10) and whereby the high conductive metal (10) is at least partially encapsuled by the low conductive metal (20), wherein the thin film (301) is at least partially encapsuled by a flexible polymer (40).

12. The method according to claim li, characterized in that the high conductive metal (10) is completely encapsuled by the low conductive metal (20) and whereby the high conductive metal (10) Is gold, and the low conductive metal (10) Is platinum and whereby the all sided

encapsulation of gold traces is realized by conducting at least the following process steps; sputter depositing of a platinum layer;

selective gold plating of traces on the platinum layer through resist mask (90) to form traces;

patterning of platinum ; and

platinum electroplating of traces.

13. The method according to claim 12, characterized In that the high

conductive metal (10) is completely encapsuled by the low conductive metal (20) and whereby the high conductive metal (10) is gold, and the low conductive metal (10) is platinum and whereby the all sided encapsulation of gold traces is realized by conducting at least the following process steps: sputter depositing of a platinum layer;

selective gold plating on the platinum layer through resist mask (90'), preferably with a negative slope, to form traces; sputter deposition of platinum; and

patterning of platinum.

14. The method according to claim 12, characterized in that the high

conductive metal (10) Is completely encapsuled by the low conductive metal (20) and whereby the high conductive metal (10) is gold, and the low conductive metal (10) is platinum and whereby the all sided encapsulation of gold traces is realized by conducting at least the following process steps; sputter depositing of a platinum layer;

sputter depositing of gold on the platinum layer and subsequently structure the gold to form traces, preferably with sloped edges; sputter deposition of platinum; and patterning of titanium or platinum.

A deep brain stimulation system (100) comprising at least one lead (300) with a thin film (301) according to one of claims 1 to 10 or comprising at least one thin film (301) being manufactured acccording to method of any one of claims 11 to 14.