Title:
THIN-FILM TRANSISTOR GATE VOLTAGE SUPPLY CIRCUIT
Document Type and Number:
WIPO Patent Application WO/2017/101181
Kind Code:
A1
Abstract:
A thin-film transistor gate voltage supply circuit (1). The thin-film transistor gate voltage supply circuit (1) is for use in providing a gate voltage to a thin-film transistor. The thin-film transistor gate voltage supply circuit (1) comprises a voltage generating circuit (10) and a temperature compensation circuit (30). The voltage generating circuit (10) is used for generating an original voltage. The temperature compensation circuit (30) is electrically connected to the voltage generating circuit (10). Also, the temperature compensation circuit (30) is used for detecting the ambient temperature. When the ambient temperature is less than a preset temperature, the temperature compensation circuit (30) compensates the original voltage on the basis of the difference between the ambient temperature and the preset temperature to produce a first voltage and provides the first voltage to a gate of the thin-film transistor, thus driving the thin-film transistor to work normally. The thin-film transistor gate voltage supply circuit (1) is capable of driving the thin-film transistor to work normally in a low temperature environment.
Inventors:
CAO DAN (CN)
Application Number:
PCT/CN2016/070314
Publication Date:
June 22, 2017
Filing Date:
January 06, 2016
Export Citation:
Assignee:
SHENZHEN CHINA STAR OPTOELECT (CN)
International Classes:
G09G3/36
Foreign References:
| CN104036740A | 2014-09-10 | |||
| CN102982778A | 2013-03-20 | |||
| CN203456073U | 2014-02-26 | |||
| US20080309608A1 | 2008-12-18 | |||
| CN102005197A | 2011-04-06 | |||
| JP2007072270A | 2007-03-22 |
Attorney, Agent or Firm:
GUANGZHOU SCIHEAD PATENT AGENT CO., LTD (CN)
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