Title:
THIN-FILM TRANSISTOR, MANUFACTURING METHOD THEREOF AND ARRAY SUBSTRATE
Document Type and Number:
WIPO Patent Application WO/2016/150277
Kind Code:
A1
Abstract:
A thin-film transistor, manufacturing method thereof and array substrate. The thin-film transistor comprises an active layer (2) disposed on a substrate (1), and the active layer (2) comprises a middle channel region (21), a first high-resistance region (22) and a second high-resistance region (23) respectively disposed at outer sides of the middle channel region, a source region (24) disposed at an outer side of the first high-resistance region and a drain region (25) disposed at an outer side of the second high-resistance region, wherein a base material of the active layer is monocrystalline diamond. The thin-film transistor, manufacturing method thereof and array substrate reduce carrier mobility by disposing the high-resistance regions at the outer sides of the middle channel of the active layer, thus effectively reducing a leakage current of a thin-film transistor of monocrystalline diamond.
Inventors:
LI XIAOLONG (CN)
LIU ZHENG (CN)
LU XIAOYONG (CN)
LONG CHUNPING (CN)
ZHANG HUIJUAN (CN)
LIU ZHENG (CN)
LU XIAOYONG (CN)
LONG CHUNPING (CN)
ZHANG HUIJUAN (CN)
Application Number:
PCT/CN2016/075201
Publication Date:
September 29, 2016
Filing Date:
March 01, 2016
Export Citation:
Assignee:
BOE TECHNOLOGY GROUP CO LTD (CN)
International Classes:
H01L29/786; H01L21/04
Foreign References:
| CN1312589A | 2001-09-12 | |||
| CN101527331A | 2009-09-09 | |||
| CN104659109A | 2015-05-27 | |||
| CN104241390A | 2014-12-24 |
Attorney, Agent or Firm:
ZHONGZI LAW OFFICE (CN)
北京市中咨律师事务所 (CN)
北京市中咨律师事务所 (CN)
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