Title:
THIN FILM-TYPE LIGHT EMITTING DEVICE COMPRISING CHARGE GENERATION BONDING LAYER AND METHOD FOR MANUFACTURING SAME
Document Type and Number:
WIPO Patent Application WO/2019/083099
Kind Code:
A1
Abstract:
Disclosed are a thin film-type light emitting device comprising a charge generation bonding layer, and a method for manufacturing the same. A thin film-type light emitting device comprising a charge generation bonding layer according to an embodiment of the present invention comprises: a cathode; at least one light emitting unit which is formed on the cathode and includes sequentially a charge generation bonding layer, an electron injection/transport layer, a thin film-type light emitting layer, and a hole injection/transport layer; and a cathode formed on the at least one light emitting unit, wherein the charge generation bonding layer has a layer-by-layer structure in which a p-type semiconductor layer and an n-type semiconductor layer are formed, and the thin film-type light emitting device includes the annealed n-type semiconductor layer, thereby adjusting a concentration of oxygen vacancy at an interface between the p-type semiconductor layer and the n-type semiconductor layer.
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Inventors:
JANG JIN (KR)
KIM HYO MIN (KR)
KIM HYO MIN (KR)
Application Number:
PCT/KR2018/000782
Publication Date:
May 02, 2019
Filing Date:
January 17, 2018
Export Citation:
Assignee:
UNIV INDUSTRY COOPERATION GROUP KYUNG HEE UNIV (KR)
International Classes:
H01L51/52; H01L51/00; H01L51/50; H01L51/56
Foreign References:
| KR20160066721A | 2016-06-13 | |||
| KR101397078B1 | 2014-05-19 | |||
| KR20060049289A | 2006-05-18 |
Other References:
OH, TERESA: "Analysis of Crystallinity and Electrical Characteristics of Oxide Semiconductor of ZnO in Accordance with Annealing Methods", KOREAN JOURNAL OF MATERIALS RESEARCH, vol. 27, no. 5, May 2017 (2017-05-01), pages 242 - 247
KIM, HYO-MIN ET AL.: "Solution Processed Metal-oxide P-N Charge Generation Junction for High Performance Inverted Quantum-dot Light Emitting Diodes", ACS APPLIED MATERIALS & INTERFACE, vol. 9, no. 44, 18 October 2017 (2017-10-18), pages 38678 - 38686, XP055598301
KIM, HYO-MIN ET AL.: "Solution Processed Metal-oxide P-N Charge Generation Junction for High Performance Inverted Quantum-dot Light Emitting Diodes", ACS APPLIED MATERIALS & INTERFACE, vol. 9, no. 44, 18 October 2017 (2017-10-18), pages 38678 - 38686, XP055598301
Attorney, Agent or Firm:
KIM, Youn Gwon (KR)
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