Title:
THREE-AXES SENSOR AND A METHOD OF MAKING SAME
Document Type and Number:
WIPO Patent Application WO2002010684
Kind Code:
A9
Abstract:
A three axis MEM tunneling/capacitive sensor and method of making same. Cantilevered beamstructures for at least two orthogonally arranged sensors and associated mating structures aredefined on a first substrate or wafer, the at least two orthogonally arranged sensors havingorthogonal directions of sensor sensitivity. A resonator structure of at least a third sensor is alsodefined, the third sensor being sensitive in a third direction orthogonal to the orthogonal directions of sensor sensitivity of the two orthogonally arranged sensors and the resonatorstructure having a mating structure thereon. Contact structures for at least two orthogonallyarranged sensors are formed together with mating structures on a second substrate or wafer, themating structures on the second substrate or wafer being of a complementary shape to the matingstructures on the first substrate or wafer. The mating structures of the first substrate aredisposed in a confronting relationship with the mating structures of the second substrate orwafer. A eutectic bonding layer associated with one of the mating structures facilitates bondingbetween the respective mating structures. At least a portion of the first substrate or wafer is removed to release the cantilevered beam structures and the resonator structure.
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Inventors:
KUBENA RANDALL L (US)
CHANG DAVID T (US)
CHANG DAVID T (US)
Application Number:
PCT/US2001/024200
Publication Date:
March 27, 2003
Filing Date:
July 30, 2001
Export Citation:
Assignee:
HRL LAB LLC (US)
KUBENA RANDALL L (US)
CHANG DAVID T (US)
KUBENA RANDALL L (US)
CHANG DAVID T (US)
International Classes:
B81B3/00; B81C1/00; B81C3/00; G01C19/5656; G01P15/08; G01P15/18; H01H1/00; H01L41/08; H01H59/00; (IPC1-7): G01C19/56; B81C3/00; B81B3/00
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