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Title:
THREE-DIMENSIONAL MEMORY DEVICE AND METHOD FOR FORMING THE SAME
Document Type and Number:
WIPO Patent Application WO/2022/083298
Kind Code:
A1
Abstract:
A three-dimensional (3D) memory device includes a stack structure and a channel structure. The stack structure includes interleaved conductive layers and dielectric layers. The channel structure extends through the stack structure along a first direction. The channel structure includes a semiconductor channel, and a memory film over the semiconductor channel. The memory film includes a tunneling layer over the semiconductor channel, a storage layer over the tunneling layer, and a blocking layer over the storage layer. The blocking layer and the storage layer are separated by the dielectric layers into a plurality of sections.

Inventors:
LIU XIAOXIN (CN)
XUE LEI (CN)
XIA ZHILIANG (CN)
Application Number:
PCT/CN2021/115782
Publication Date:
April 28, 2022
Filing Date:
August 31, 2021
Export Citation:
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Assignee:
YANGTZE MEMORY TECH CO LTD (CN)
International Classes:
H01L27/1157
Foreign References:
US20110147823A12011-06-23
US20190148405A12019-05-16
US20100163968A12010-07-01
Attorney, Agent or Firm:
NTD UNIVATION INTELLECTUAL PROPERTY AGENCY LTD. (CN)
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