Title:
THREE-DIMENSIONAL MEMORY DEVICES HAVING THROUGH STAIR CONTACTS AND METHODS FOR FORMING THE SAME
Document Type and Number:
WIPO Patent Application WO/2020/140190
Kind Code:
A1
Abstract:
Embodiments of three-dimensional (3D) memory devices having through stair contacts (TSCs) and methods for forming the same are disclosed. In an example, a method for forming a 3D memory device (100) is disclosed. A dielectric stack (104) including a plurality of interleaved dielectric layers (112) and sacrificial layers (110) is formed on a substrate (102). A staircase structure (142) is formed on one side of the dielectric stack (104). A dummy hole extending vertically through the staircase structure (142) and reaching the substrate (102) is formed. A spacer (138) having a hollow core is formed in the dummy hole. A TSC (136) in contact with the substrate (102) is formed by depositing a conductor layer (140) in the hollow core of the spacer (138). The TSC (136) extends vertically through the staircase structure (142).
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Inventors:
WEI QINXIANG (CN)
SUN JIANHUA (CN)
XIA JI (CN)
SUN JIANHUA (CN)
XIA JI (CN)
Application Number:
PCT/CN2019/070009
Publication Date:
July 09, 2020
Filing Date:
January 02, 2019
Export Citation:
Assignee:
YANGTZE MEMORY TECH CO LTD (CN)
International Classes:
H01L21/768; H01L23/538; H01L27/11548; H01L27/11551; H01L27/11575; H01L27/11578
Domestic Patent References:
| WO2018194750A1 | 2018-10-25 |
Foreign References:
| CN108377660A | 2018-08-07 | |||
| CN109075175A | 2018-12-21 | |||
| CN108431956A | 2018-08-21 | |||
| CN108766971A | 2018-11-06 | |||
| US20180301374A1 | 2018-10-18 | |||
| US20170236746A1 | 2017-08-17 |
Other References:
See also references of EP 3850660A4
Attorney, Agent or Firm:
NTD UNIVATION INTELLECTUAL PROPERTY AGENCY LTD. (CN)
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