Title:
TRANSISTOR
Document Type and Number:
WIPO Patent Application WO/2024/029181
Kind Code:
A1
Abstract:
This transistor includes: an amorphous substrate; a first buffer layer on the amorphous substrate; a first nitride semiconductor layer that is provided in an island shape on the first buffer layer; a second nitride semiconductor layer that is on the first nitride semiconductor layer and covers the first nitride semiconductor layer; and a gate electrode layer that is on the second nitride semiconductor layer and overlaps with the first nitride semiconductor layer.
Inventors:
NISHIMURA MASUMI (JP)
Application Number:
PCT/JP2023/020437
Publication Date:
February 08, 2024
Filing Date:
June 01, 2023
Export Citation:
Assignee:
JAPAN DISPLAY INC (JP)
International Classes:
H01L29/786; H01L21/336; H01L21/338; H01L29/778; H01L29/812
Foreign References:
| JPH09172199A | 1997-06-30 | |||
| JP2013033918A | 2013-02-14 | |||
| JP2012119569A | 2012-06-21 | |||
| JP2018168029A | 2018-11-01 | |||
| JPH088186A | 1996-01-12 | |||
| JPH11243229A | 1999-09-07 |
Other References:
WATAHIKI, KOSUKE : "17a-503-2 Preparation of AlGaN/GaN HEMT structures on amorphous substrate using graphene buffer layer", PROCEEDINGS OF THE 64TH SPRING MEETING OF THE JAPAN SOCIETY OF APPLIED PHYSICS JSAP; YOKOHAMA; 14-17 MARCH 2017, vol. 64, 1 March 2017 (2017-03-01) - 17 March 2017 (2017-03-17), pages 13 - 251, XP009552828
Attorney, Agent or Firm:
TAKAHASHI, HAYASHI AND PARTNER PATENT ATTORNEYS, INC. (JP)
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