Title:
TWO-LAYER FILM FOR NEXT GENERATION DAMASCENE BARRIER APPLICATION WITH GOOD OXIDATION RESISTANCE
Document Type and Number:
WIPO Patent Application WO2004033752
Kind Code:
A3
Abstract:
A method is provided for processing a substrate including providing a processing gas comprising an organosilicon compound comprising a phenyl group to the processing chamber, and reacting the processing gas to deposit a low k silicon carbide barrier layer useful as a barrier layer in damascene or dual damascene applications with low k dielectric materials. A method is provided for depositing a silicon carbide cap layer that has substantially no phenyl groups attached to silicon atoms from a processing gas comprising an oxygen-free organosilicon compound on a low k silicon carbide barrier layer.
Inventors:
ZHENG YI (US)
NEMANI SRINIVAS D (US)
XIA LI-QUN (US)
NEMANI SRINIVAS D (US)
XIA LI-QUN (US)
Application Number:
PCT/US2003/031559
Publication Date:
December 09, 2004
Filing Date:
October 07, 2003
Export Citation:
Assignee:
APPLIED MATERIALS INC (US)
ZHENG YI (US)
NEMANI SRINIVAS D (US)
XIA LI-QUN (US)
ZHENG YI (US)
NEMANI SRINIVAS D (US)
XIA LI-QUN (US)
International Classes:
C23C16/02; C23C16/32; H01L21/314; H01L21/768; (IPC1-7): C23C16/32; C23C16/02; H01L21/314; H01L21/768
Domestic Patent References:
| WO2000019498A1 | 2000-04-06 | |||
| WO2003043073A2 | 2003-05-22 |
Foreign References:
| US20020119250A1 | 2002-08-29 | |||
| US6436824B1 | 2002-08-20 | |||
| EP1176226A1 | 2002-01-30 |
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