Title:
WAFER BAND-EDGE MEASUREMENT USING SPECTROSCOPY AND A PROCESS OF UNIFORM WAFER TEMPERATURE CONTROL
Document Type and Number:
WIPO Patent Application WO2001050109
Kind Code:
A3
Abstract:
A method and system for using transmission spectroscopy to measure a temperature of a substrate (135). By passing light through a substrate, the temperature of the substrate can be determined using the band-edge characteristics of the wafer. This in-situ method and system can be used as a feedback control in combination with a variable temperature substrate holder (182) to more accurately control the processing conditions of the substrate. By utilizing a multiplicity of measurement sites the variation of the temperature across the substrate (135) can also be measured.
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| WO/1995/013745 | IMPROVED IR THERMOMETER |
Inventors:
DENTON MEDONA B (US)
JOHNSON WAYNE L (US)
SIRKIS MURRAY D (US)
JOHNSON WAYNE L (US)
SIRKIS MURRAY D (US)
Application Number:
PCT/US2001/000003
Publication Date:
January 10, 2002
Filing Date:
January 05, 2001
Export Citation:
Assignee:
TOKYO ELECTRON LTD (JP)
DENTON MEDONA B (US)
JOHNSON WAYNE L (US)
SIRKIS MURRAY D (US)
DENTON MEDONA B (US)
JOHNSON WAYNE L (US)
SIRKIS MURRAY D (US)
International Classes:
G01J5/00; G01J5/02; G01K11/12; H01L21/205; H01L21/3065; H01L21/66; H01L21/00; (IPC1-7): H05B1/02
Foreign References:
| US6062729A | 2000-05-16 | |||
| US5270222A | 1993-12-14 | |||
| US6160242A | 2000-12-12 | |||
| US5255286A | 1993-10-19 |
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