Title:
【発明の名称】最適化されたゲルマニウムプロファイルを有するシリコンゲルマニウムバイポーラトランジスタ
Document Type and Number:
Japanese Patent JP2003520443
Kind Code:
A
Abstract:
A silicon-germanium bipolar transistor includes a silicon substrate in which a first n-doped emitter region, a second p-doped base region adjoining the latter and a third n-doped collector region adjoining the latter, are formed. A first space charge zone is formed between the emitter region and the base region and a second space charge zone is formed between the base region and the collector region. The base region and an edge zone of the adjoining emitter region are alloyed with germanium. The germanium concentration in the emitter region rises toward the base region. The germanium concentration in a junction region containing the first space charge zone rises less sharply than in the emitter region or decreases and, in the base region, it initially again rises more sharply than in the junction region.
Inventors:
Klein, Wolfgang
Rachner, Rudolf
Molzer, Wolfgang
Rachner, Rudolf
Molzer, Wolfgang
Application Number:
JP2001553560A
Publication Date:
July 02, 2003
Filing Date:
January 08, 2001
Export Citation:
Assignee:
Infineon Technologies Actien Gezel Shaft
International Classes:
H01L21/331; H01L29/165; H01L29/737; (IPC1-7): H01L21/331; H01L29/737
Attorney, Agent or Firm:
Kenzo Hara (3 outside)