III族窒化物半導体結晶の製造方法、窒化ガリウム系化合物半導体の製造方法、窒化ガリウム系化合物半導体、窒化ガリウム系化合物半導体発光素子およびその半導体発光素子を用いた光源

Title:

Document Type and Number:

Japanese Patent JP2004507106

Kind Code:

A

Inventors:

Urashima Yasuto
Mineo Okuyama
Tetsuro Sakurai
Hisayuki Miki

Application Number:

JP2002521342A

Publication Date:

March 04, 2004

Filing Date:

August 17, 2001

Export Citation:

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Assignee:

SHOWA DENKO K.K.

International Classes:

C30B25/04; C30B25/02; C30B29/38; H01L21/20; H01L21/205; H01L33/06; H01L33/32; H01S5/323; H01S5/343; (IPC1-7): H01L21/205; C30B25/04; C30B29/38; H01L33/00; H01S5/323

Attorney, Agent or Firm:

Kenzo Fukuda
Shinichi Fukuda
Takemichi Fukuda

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