Title:
ホウ素拡散障壁層および半導体デバイス製造におけるその使用
Document Type and Number:
Japanese Patent JP2004507107
Kind Code:
A
Abstract:
A method of fabricating a semiconductor device includes providing a semiconductor substrate, forming an oxide layer in the substrate, and adding nitrogen atoms on top of the exposed surface of the oxide film to form a diffusion barrier.
Inventors:
Imad Mahawili
Application Number:
JP2002521343A
Publication Date:
March 04, 2004
Filing Date:
August 17, 2001
Export Citation:
Assignee:
Hitachi Kokusai Electric Co., Ltd.
International Classes:
H01L21/283; H01L21/28; H01L21/314; H01L21/318; H01L29/51; H01L29/78; (IPC1-7): H01L29/78; H01L21/283; H01L21/318
Attorney, Agent or Firm:
Haruhiko Miyamoto
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