Title:
低誘電率窒化ケイ素膜およびその形成方法、半導体装置およびその製造装置
Document Type and Number:
Japanese Patent JP2004507108
Kind Code:
A
Abstract:
A method of forming a silicon nitride film includes a CVD process that uses an organic Si compound having an organic silazane bond as a gaseous source. The CVD process is conducted under a condition that the organic silazane bond in the organic Si source is preserved in the silicon nitride film.
Inventors:
Zheng Jie
Application Number:
JP2002521345A
Publication Date:
March 04, 2004
Filing Date:
August 16, 2001
Export Citation:
Assignee:
東京エレクトロン株式会社
International Classes:
C23C16/30; C23C16/34; H01L21/31; H01L21/312; H01L21/318; H01L21/768; H01L23/522; H01L21/314; (IPC1-7): H01L21/318; H01L21/31; H01L21/768
Attorney, Agent or Firm:
Tadahiko Ito