Title:
半導体処理のためのガス供給装置
Document Type and Number:
Japanese Patent JP2004511905
Kind Code:
A
Abstract:
A gas distribution system for processing a semiconductor substrate includes a plurality of gas supplies, a mixing manifold wherein gas from the plurality of gas supplies is mixed together, a plurality of gas supply lines delivering the mixed gas to different zones in the chamber, and a control valve. The gas supply lines include a first gas supply line delivering the mixed gas to a first zone in the chamber and a second gas supply line delivering the mixed gas to a second zone in the chamber. The control valve controls a rate of flow of the mixed gas in the first and/or second gas supply line such that a desired ratio of flow rates of the mixed gas is achieved in the first and second gas supply lines. In a method of using the apparatus, a semiconductor substrate is supplied to the reaction chamber and the substrate is processed by supplying the mixed gas to the first and second zones, the control valve being adjusted such that a rate of flow of the mixed gas in the first and/or second gas supply line provides a desired ratio of flow rates of the mixed gas in the first and second zones.
Inventors:
Macmillin, Brian, Kay.
Robert Knopp
Robert Knopp
Application Number:
JP2002535153A
Publication Date:
April 15, 2004
Filing Date:
September 26, 2001
Export Citation:
Assignee:
LAM RESEARCH CORPORATION
International Classes:
H05H1/46; B01J4/00; B01J19/08; C23F4/00; H01L21/00; H01L21/3065; (IPC1-7): H01L21/3065; B01J4/00; B01J19/08; H05H1/46
Domestic Patent References:
| JPS61100935A | 1986-05-19 | |||
| JPH05315290A | 1993-11-26 | |||
| JPH0628040A | 1994-02-04 | |||
| JPH01140712A | 1989-06-01 | |||
| JPH08111381A | 1996-04-30 |
Attorney, Agent or Firm:
Yasunori Otsuka
Shiro Takayanagi
Yasuhiro Otsuka
Shuji Kimura
Shiro Takayanagi
Yasuhiro Otsuka
Shuji Kimura