Title:
形状が調整されたスパッタリングターゲット
Document Type and Number:
Japanese Patent JP2004531648
Kind Code:
A
Abstract:
In a standard target configuration, sputtered atoms distribute in a wide angle producing a non-uniform film and poor step coverage, mainly because the flux of sputtered atoms are not collimated and the center region of the wafer (220) experiences a higher flux of sputtered atoms than the edge of the wafer. Sputtering targets (210) described herein are topologically and morphologically tailored such that sputtered atoms impinge directly toward a wafer in a narrow cosine distribution. In effect, the target is designed with a built-in collimator. The desired morphology and topography can be accomplished by micro (e.g., parabolic dimples) (250) and/or macro scale (e.g., wafer contour, circular wave contour) modification of the target geometry and topography. The atoms/ions travel along a path (230) from the surface material (260), which is coupled, to the core material (270).
Inventors:
Lee, Eel
Application Number:
JP2003507330A
Publication Date:
October 14, 2004
Filing Date:
February 20, 2002
Export Citation:
Assignee:
Honeywell International Inc.
International Classes:
C23C14/34; H01L21/285; (IPC1-7): C23C14/34; H01L21/285
Attorney, Agent or Firm:
Yoshio Kawaguchi
Akio Ichiiri
Makoto Ono
Katsuma Osaki
Mitsuaki Tsubokura
Akio Ichiiri
Makoto Ono
Katsuma Osaki
Mitsuaki Tsubokura