Title:
ハイドライド気相成長方法による転位密度の低い無極性窒化ガリウムの成長
Document Type and Number:
Japanese Patent JP2006510227
Kind Code:
A
Abstract:
Lateral epitaxial overgrowth (LEO) of non-polar gallium nitride (GaN) films results in significantly reduced defect density.
Inventors:
Benjamin A Haskell
Michael Dee Craven
Paul Tea Fini
Steven Pee Denverse
James S Spec
Shuji Nakamura
Michael Dee Craven
Paul Tea Fini
Steven Pee Denverse
James S Spec
Shuji Nakamura
Application Number:
JP2004564676A
Publication Date:
March 23, 2006
Filing Date:
July 15, 2003
Export Citation:
Assignee:
The Regents of The University of California
Japan Science and Technology Agency
Japan Science and Technology Agency
International Classes:
H01L21/205; C30B25/02; H01L21/02; H01L21/20
Domestic Patent References:
| JP2001345281A | 2001-12-14 | |||
| JP2000277437A | 2000-10-06 | |||
| JP2000223418A | 2000-08-11 |
Attorney, Agent or Firm:
Mamoru Shimizu