Title:
高度発光ドープ金属窒化物粉末を合成するための方法
Document Type and Number:
Japanese Patent JP2007534609
Kind Code:
A
Abstract:
A simple, inexpensive method of producing in bulk a doped metal nitride powder that exhibits a high luminescent efficiency, by first forming a metal-dopant alloy and then reacting the alloy with high purity ammonia under controlled conditions in a reactor. The resulting doped metal nitride powders will exhibit a luminescent efficiency that greatly exceeds that seen in pure undoped GaN powders, doped GaN thin films, and ZnS powders.
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Inventors:
Ponce, Fernando A.
Rafael Garcia
Thomas, Alan Sea.
Bell, abigail
Rafael Garcia
Thomas, Alan Sea.
Bell, abigail
Application Number:
JP2007510950A
Publication Date:
November 29, 2007
Filing Date:
April 27, 2005
Export Citation:
Assignee:
Arizona Board of Regents
International Classes:
C01B21/06; C01B21/072; C09K11/08; C09K11/62; C09K11/64
Domestic Patent References:
| JP2003238296A | 2003-08-27 | |||
| JPH11246297A | 1999-09-14 | |||
| JPH01145309A | 1989-06-07 | |||
| JPH11189498A | 1999-07-13 |
Attorney, Agent or Firm:
Atsushi Aoki
Takashi Ishida
Tetsuji Koga
Nagasaka Tomoyasu
Hiroshi Kamematsu
Takashi Ishida
Tetsuji Koga
Nagasaka Tomoyasu
Hiroshi Kamematsu